发明申请
- 专利标题： SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体器件
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申请号： US14888009申请日： 2013-05-29
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公开(公告)号： US20160079142A1公开(公告)日： 2016-03-17
- 发明人: Shigeru HASEGAWA , Kazuhiro MORISHITA , Ryo TSUDA , Yukimasa HAYASHIDA , Goro YASUTOMI , Ryutaro DATE
- 申请人： MITSUBISHI ELECTRIC CORPORATION
- 申请人地址： JP Tokyo
- 专利权人： MITSUBISHI ELECTRIC CORPORATION
- 当前专利权人： MITSUBISHI ELECTRIC CORPORATION
- 当前专利权人地址： JP Tokyo
- 国际申请： PCT/JP2013/064869 WO 20130529
- 主分类号： H01L23/367
- IPC分类号： H01L23/367 ; H01L23/498 ; H01L29/16 ; H01L25/07 ; H01L29/20 ; H01L23/492 ; H01L23/40
摘要：
A base plate, and a plurality of unit structures formed on the base plate are provided. Each of the unit structures including an insulating substrate fixed on the base plate, a metal pattern formed on the insulating substrate, a semiconductor element electrically connected to the metal pattern, and a main electrode having an upper end portion exposed to the outside and a lower end portion connected to a peripheral portion of the metal pattern closest to an outer edge of the base plate.
公开/授权文献
- US10325827B2 Semiconductor device 公开/授权日：2019-06-18
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