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    Wafer support system
    1.
    发明授权
    Wafer support system 失效
    晶圆支撑系统

    公开(公告)号：US07655093B2

    公开(公告)日：2010-02-02

    申请号：US11668409

    申请日：2007-01-29

    Applicant: Michael W. Halpin ,  Mark R. Hawkins ,  Derrick W. Foster ,  Robert M. Vyne ,  John F. Wengert ,  Cornelius A. van der Jeugd ,  Loren R. Jacobs ,  Frank B. M. Van Bilsen ,  Matthew Goodman ,  Hartmann Glenn ,  Jason M. Layton

    Inventor： Michael W. Halpin ,  Mark R. Hawkins ,  Derrick W. Foster ,  Robert M. Vyne ,  John F. Wengert ,  Cornelius A. van der Jeugd ,  Loren R. Jacobs ,  Frank B. M. Van Bilsen ,  Matthew Goodman ,  Hartmann Glenn ,  Jason M. Layton

    IPC: H01L21/00 ,  C23C14/00 ,  C23C16/00

    CPC classification number: C23C16/4586 ,  H01L21/68735 ,  H01L21/6875 ,  H01L21/68792 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A wafer support system comprising a susceptor having top and bottom sections and gas flow passages therethrough. One or more spacers projecting from a recess formed in the top section of the susceptor support a wafer in spaced relationship with respect to the recess. A sweep gas is introduced to the bottom section of the susceptor and travels through the gas flow passages to exit in at least one circular array of outlets in the recess and underneath the spaced wafer. The sweep gas travels radially outward between the susceptor and wafer to prevent back-side contamination of the wafer. The gas is delivered through a hollow drive shaft and into a multi-armed susceptor support underneath the susceptor. The support arms conduct the sweep gas from the drive shaft to the gas passages in the susceptor. The gas passages are arranged to heat the sweep gas prior to delivery underneath the wafer. Short purge channels may be provided to deliver some of the sweep gas to regions surrounding the spacers to cause a continuous flow of protective purge gas around the spacers.

    Abstract translation: 一种晶片支撑系统，其包括具有顶部和底部部分以及穿过其的气体流动通道的基座。 从形成在基座的顶部的凹部突出的一个或多个间隔件相对于凹部以间隔的关系支撑晶片。 吹扫气体被引入到基座的底部，并且穿过气体流动通道，以在凹槽中的至少一个圆形阵列的出口和在间隔开的晶片之下排出。 吹扫气体在基座和晶片之间径向向外行进，以防止晶片的背面污染。 气体通过中空驱动轴输送到基座下方的多臂感受器支架中。 支撑臂将吹扫气体从驱动轴传导到基座中的气体通道。 气体通道被布置成在散布在晶片之下之前加热吹扫气体。 可以提供短的吹扫通道以将一些吹扫气体输送到围绕间隔物的区域，以引起隔离物周围的保护性吹扫气体的连续流动。

    Delicate product packaging system
    2.
    发明授权
    Delicate product packaging system 失效
    精美的产品包装系统

    公开(公告)号：US06976586B2

    公开(公告)日：2005-12-20

    申请号：US10144158

    申请日：2002-05-10

    Applicant: Michael W. Halpin

    Inventor： Michael W. Halpin

    IPC: B65D81/07 ,  B65D81/02

    CPC classification number: B65D81/07

    Abstract: The packaging system comprises a first plurality of interlaced fingers disposed in the upper portion of a box, and a second plurality of interlaced fingers disposed in a lower portion. The fingers provide provide a soft support for a product placed between the fingers.

    Abstract translation: 包装系统包括设置在盒的上部的第一多个交错指状物和设置在下部的第二多个交错指状物。 手指提供为放置在手指之间的产品提供软支撑。

    Process chamber with downstream getter plate
    3.
    发明授权
    Process chamber with downstream getter plate 失效
    具有下游吸气板的处理室

    公开(公告)号：US06464792B1

    公开(公告)日：2002-10-15

    申请号：US09613437

    申请日：2000-07-11

    Applicant: John F. Wengert ,  Loren R. Jacobs ,  Michael W. Halpin ,  Derrick W. Foster ,  Cornelius A. van der Jeugd ,  Robert M. Vyne ,  Mark R. Hawkins

    Inventor： John F. Wengert ,  Loren R. Jacobs ,  Michael W. Halpin ,  Derrick W. Foster ,  Cornelius A. van der Jeugd ,  Robert M. Vyne ,  Mark R. Hawkins

    IPC: C23C1600

    CPC classification number: B01J3/006 ,  C23C16/44 ,  C23C16/455 ,  C23C16/45502 ,  C23C16/46 ,  C23C16/481 ,  H01L21/67115 ,  H01L21/68735 ,  H01L21/68785

    Abstract: An improved chemical vapor deposition reaction chamber having an internal support plate to enable reduced pressure processing. The chamber has a vertical-lateral lenticular cross-section with a wide horizontal dimension and a shorter vertical dimension between bi-convex upper and lower walls. A central horizontal support plate is provided between two lateral side rails of the chamber. A large rounded rectangular aperture is formed in the support plate for positioning a rotatable susceptor on which a wafer is placed. The shaft of the susceptor extends downward through the aperture and through a lower tube depending from the chamber. The support plate segregates the reaction chamber into an upper region and a lower region, with purge gas being introduced through the lower tube into the lower region to prevent unwanted deposition therein. A temperature compensation ring is provided surrounding the susceptor and supported by fingers connected to the support plate. The temperature compensation ring may be circular or may be built out to conform to the rounded rectangular shape of the support plate aperture. The ring may extend farther downstream from the susceptor than upstream. A separate sacrificial quartz plate may be provided between the circular temperature compensation ring and the rounded rectangular aperture. The quartz plate may have a horizontal portion and a vertical lip in close abutment with the aperture to prevent devitrification of the support plate. A gas injector abuts an inlet flange of the chamber and injects process gas into the upper region and purge gas into the lower region. The gas injector includes a plurality of independently controlled channels disposed laterally across the chamber, the channels merging at an outlet of the injector to allow mixing of the adjacent longitudinal edges of the separate flows well before reaching the wafer.

    Abstract translation: 改进的化学气相沉积反应室具有内部支撑板以实现减压处理。 该腔室具有垂直横向的透镜状横截面，在双凸上壁和下壁之间具有宽的水平尺寸和较短的垂直尺寸。 中央水平支撑板设置在腔室的两个侧向侧轨之间。 在支撑板中形成大的圆形矩形孔，用于定位其上放置晶片的可旋转基座。 基座的轴向下延伸穿过孔，并通过从腔室垂下的下管。 支撑板将反应室分离成上部区域和下部区域，其中吹扫气体通过下部管道被引入下部区域，以防止其中不希望的沉积。 温度补偿环设置在基座周围并由连接到支撑板的手指支撑。 温度补偿环可以是圆形的，或者可以被构造成符合支撑板孔的圆形矩形形状。 环可以比上游更远离基座延伸下游。 可以在环形温度补偿环和圆形矩形孔之间设置单独的牺牲石英板。 石英板可以具有与孔紧密邻接的水平部分和垂直唇缘，以防止支撑板的失透。 气体喷射器邻接室的入口凸缘并将工艺气体注入上部区域并将气体吹入下部区域。 气体喷射器包括跨过室横向设置的多个独立控制的通道，通道在喷射器的出口处汇合，以允许在到达晶片之前将分离的流的相邻纵向边缘混合。

    Wafer support system
    4.
    发明授权
    Wafer support system 有权
    晶圆支撑系统

    公开(公告)号：US06343183B1

    公开(公告)日：2002-01-29

    申请号：US09605094

    申请日：2000-06-27

    Applicant: Michael W. Halpin ,  Mark R. Hawkins ,  Derrick W. Foster ,  Robert M. Vyne ,  John F. Wengert ,  Cornelius A. van der Jeugd ,  Loren R. Jacobs ,  Frank B. M. Van Bilsen ,  Matthew Goodman ,  Hartmann Glenn ,  Jason M. Layton

    Inventor： Michael W. Halpin ,  Mark R. Hawkins ,  Derrick W. Foster ,  Robert M. Vyne ,  John F. Wengert ,  Cornelius A. van der Jeugd ,  Loren R. Jacobs ,  Frank B. M. Van Bilsen ,  Matthew Goodman ,  Hartmann Glenn ,  Jason M. Layton

    IPC: A21B200

    CPC classification number: C23C16/4586 ,  H01L21/68735 ,  H01L21/6875 ,  H01L21/68792 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A wafer support system comprising a segmented susceptor having top and bottom sections and gas flow passages therethrough. A plurality of spacers projecting from a recess formed in the top section of the susceptor support a wafer in spaced relationship with respect to the recess. A sweep gas is introduced to the bottom section of the segmented susceptor and travels through the gas flow passages to exit in at least one circular array of outlets in the recess and underneath the spaced wafer. The sweep gas travels radially outward between the susceptor and wafer to prevent back-side contamination of the wafer. The gas is delivered through a hollow drive shaft and into a multi-armed susceptor support underneath the susceptor. The support arms conduct the sweep gas from the drive shaft to the gas passages in the segmented susceptor. The gas passages are arranged to heat the sweep gas prior to delivery underneath the wafer. Short purge channels may be provided to deliver some of the sweep gas to regions surrounding the spacers to cause a continuous flow of protective purge gas around the spacers. A common bottom section may cooperate with a plurality of different top sections to form segmented susceptors suitable for supporting various sized wafers.

    Abstract translation: 一种晶片支撑系统，其包括具有顶部和底部部分的分段式基座以及穿过其中的气体流动通道。 从形成在基座的顶部的凹部突出的多个间隔件相对于凹部间隔开地支撑晶片。 吹扫气体被引入到分段基座的底部，并且穿过气体流动通道，在凹槽中的至少一个圆形阵列的出口和间隔开的晶片之下排出。 吹扫气体在基座和晶片之间径向向外行进，以防止晶片的背面污染。 气体通过中空驱动轴输送到基座下方的多臂感受器支架中。 支撑臂将吹扫气体从驱动轴传导到分段基座中的气体通道。 气体通道被布置成在散布在晶片之下之前加热吹扫气体。 可以提供短的吹扫通道以将一些吹扫气体输送到围绕间隔物的区域，以引起隔离物周围的保护性吹扫气体的连续流动。 共同的底部部分可以与多个不同的顶部部分配合以形成适合于支撑各种尺寸的晶片的分段式基座。

    SUBSTRATE TEMPERATURE UNIFORMITY DURING RAPID SUBSTRATE HEATING
    5.
    发明申请
    SUBSTRATE TEMPERATURE UNIFORMITY DURING RAPID SUBSTRATE HEATING 有权
    在快速基板加热期间的基板温度均匀性

    公开(公告)号：US20120234230A1

    公开(公告)日：2012-09-20

    申请号：US13049763

    申请日：2011-03-16

    Applicant: Michael W. Halpin ,  Paul T. Jacobson

    Inventor： Michael W. Halpin ,  Paul T. Jacobson

    IPC: C30B25/16 ,  C30B25/02

    CPC classification number: C30B25/16 ,  C23C16/02 ,  C23C16/0209 ,  C30B25/10 ,  C30B29/06

    Abstract: A system and methods are provided for low temperature, rapid baking to remove impurities from a semiconductor surface prior to in-situ deposition. The system is configured with an upper bank of heat elements perpendicular to the gas flow path, such that when the substrate is heated, the temperature across the substrate can be maintained relatively uniform via zoned heating. Advantageously, a short, low temperature process is suitable for advanced, high density circuits with shallow junctions. Furthermore, throughput is greatly improved by the low temperature bake.

    Abstract translation: 提供了一种系统和方法用于低温，快速烘烤以在原位沉积之前从半导体表面去除杂质。 该系统配置有垂直于气体流动路径的上部热元件组，使得当衬底被加热时，通过分区加热可以使衬底上的温度保持相对均匀。 有利地，短的低温工艺适用于具有浅结的先进的高密度电路。 此外，通过低温烘烤大大提高了产量。

    Wafer support system
    6.
    发明授权
    Wafer support system 有权
    晶圆支撑系统

    公开(公告)号：US07186298B2

    公开(公告)日：2007-03-06

    申请号：US10642799

    申请日：2003-08-18

    Applicant: Michael W. Halpin ,  Mark R. Hawkins ,  Derrick W. Foster ,  Robert M. Vyne ,  John F. Wengert ,  Cornelius A. van der Jeugd ,  Loren R. Jacobs

    Inventor： Michael W. Halpin ,  Mark R. Hawkins ,  Derrick W. Foster ,  Robert M. Vyne ,  John F. Wengert ,  Cornelius A. van der Jeugd ,  Loren R. Jacobs

    IPC: H01L21/00 ,  C23C16/00

    CPC classification number: C23C16/4586 ,  H01L21/68735 ,  H01L21/6875 ,  H01L21/68792 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A wafer support system comprising a segmented susceptor having top and bottom sections and gas flow passages therethrough. A plurality of spacers projecting from a recess formed in the top section of the susceptor support a wafer in spaced relationship with respect to the recess. A sweep gas is introduced to the bottom section of the segmented susceptor and travels through the gas flow passages to exit in at least one circular array of outlets in the recess and underneath the spaced wafer. The sweep gas travels radially outward between the susceptor and wafer to prevent back-side contamination of the wafer. The gas is delivered through a hollow drive shaft and into a multi-armed susceptor support underneath the susceptor. The support arms conduct the sweep gas from the drive shaft to the gas passages in the segmented susceptor. The gas passages are arranged to heat the sweep gas prior to delivery underneath the wafer. Short purge channels may be provided to deliver some of the sweep gas to regions surrounding the spacers to cause a continuous flow of protective purge gas around the spacers. A common bottom section may cooperate with a plurality of different top sections to form segmented susceptors suitable for supporting various sized wafers.

    Abstract translation: 一种晶片支撑系统，其包括具有顶部和底部部分的分段式基座以及穿过其中的气体流动通道。 从形成在基座的顶部的凹部突出的多个间隔件相对于凹部间隔开地支撑晶片。 吹扫气体被引入到分段基座的底部，并且穿过气体流动通道，在凹槽中的至少一个圆形阵列的出口和间隔开的晶片之下排出。 吹扫气体在基座和晶片之间径向向外行进，以防止晶片的背面污染。 气体通过中空驱动轴输送到基座下方的多臂感受器支架中。 支撑臂将吹扫气体从驱动轴传导到分段基座中的气体通道。 气体通道被布置成在散布在晶片之下之前加热吹扫气体。 可以提供短的吹扫通道以将一些吹扫气体输送到围绕间隔物的区域，以引起隔离物周围的保护性吹扫气体的连续流动。 共同的底部部分可以与多个不同的顶部部分配合以形成适合于支撑各种尺寸的晶片的分段式基座。

    Apparatus and method for determining the flow characteristics of a volumetric flowmeter
    10.
    发明授权
    Apparatus and method for determining the flow characteristics of a volumetric flowmeter 失效
    用于确定体积流量计的流量特性的装置和方法

    公开(公告)号：US5111682A

    公开(公告)日：1992-05-12

    申请号：US346720

    申请日：1989-05-03

    Applicant: Michael W. Halpin

    Inventor： Michael W. Halpin

    IPC: G01F25/00

    CPC classification number: G01F25/0015

    Abstract: A mechanical displacement flowmeter calibrator has a first fluid line external of the measuring cylinder of the calibrator connected between the inlet and outlet thereof. A flowmeter that produces flow-representative passes is connected in the fluid line. A rod is connected to a measuring piston adapted to travel through the measuring cylinder as a fluid barrier. The rod draws the measuring piston through the measuring cylinder at a predetermined, constant speed and thereby determines the flow rate of the calibration. A reservoir means, connected to the measuring cylinder, is provided which maintains the pressure within the measuring cylinder at a substantially constant value. The displacement of the measuring piston is sensed as it travels through the measuring cylinder during a test run, while the pulses produced by the flowmeter are counted during the time interval in which the piston displaces a given volume. The flowmeter is preferably connected in the fluid line at the pressure null point. The measuring cylinder is preferably provided with a larger second external fluid line connected between the ends of the measuring cylinder. The second external fluid line is provided with a check valve which permits the flow of fluid through the second fluid line when the measuring piston is returned to its starting point at the completion of a test run.

    Abstract translation: 机械位移流量计校准器具有连接在其入口和出口之间的校准器的量筒的外部的第一流体管线。 在流体管线中连接产生流动代表通过的流量计。 杆连接到适于作为流体屏障行进通过量筒的测量活塞。 杆以预定的恒定速度将测量活塞拉过量筒，从而确定校准的流量。 设置连接到量筒的储存装置，其将量筒内的压力维持在基本恒定的值。 测量活塞的位移在测试运行期间通过量筒而被感测，而在活塞移动给定体积的时间间隔期间，由流量计产生的脉冲进行计数。 流量计优选在压力零点处连接在流体管线中。 量筒优选地设置有连接在量筒的端部之间的较大的第二外部流体管线。 第二外部流体管线设置有止回阀，当在测试运行完成时，当测量活塞返回到其起点时，该止回阀允许流体流过第二流体管线。

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