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1.
公开(公告)号:US06703592B2
公开(公告)日:2004-03-09
申请号:US10309383
申请日:2002-12-02
Applicant: Frank B. M. Van Bilsen
Inventor: Frank B. M. Van Bilsen
IPC: H05B102
CPC classification number: H01L21/67248 , G01J5/00 , G01J5/0003 , G01J5/0007 , G01J2005/0048 , G01J2005/068 , H01L21/67115
Abstract: A CVD processing reactor employs a pyrometer to control temperature ramping. The pyrometer is calibrated between wafer processing by using a thermocouple that senses temperature during a steady state portion of a processing operation.
Abstract translation: CVD处理反应器采用高温计来控制温度斜坡。 通过使用在处理操作的稳态部分期间感测温度的热电偶在晶片处理之间校准高温计。
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公开(公告)号:US06454866B1
公开(公告)日:2002-09-24
申请号:US09614481
申请日:2000-07-10
Applicant: Michael W. Halpin , Mark R. Hawkins , Derrick W. Foster , Robert M. Vyne , John F. Wengert , Cornelius A. van der Jeugd , Loren R. Jacobs , Frank B. M. Van Bilsen , Matthew Goodman , Hartmann Glenn , Jason M. Layton
Inventor: Michael W. Halpin , Mark R. Hawkins , Derrick W. Foster , Robert M. Vyne , John F. Wengert , Cornelius A. van der Jeugd , Loren R. Jacobs , Frank B. M. Van Bilsen , Matthew Goodman , Hartmann Glenn , Jason M. Layton
IPC: C23C1600
CPC classification number: C23C16/4586 , H01L21/68735 , H01L21/6875 , H01L21/68792 , H01L2924/0002 , H01L2924/00
Abstract: A wafer support system comprising a segmented susceptor having top and bottom sections and gas flow passages therethrough. A plurality of spacers projecting from a recess formed in the top section of the susceptor support a wafer in spaced relationship with respect to the recess. A sweep gas is introduced to the bottom section of the segmented susceptor and travels through the gas flow passages to exit in at least one circular array of outlets in the recess and underneath the spaced wafer. The sweep gas travels radially outward between the susceptor and wafer to prevent back-side contamination of the wafer. The gas is delivered through a hollow drive shaft and into a multi-armed susceptor support underneath the susceptor. The support arms conduct the sweep gas from the drive shaft to the gas passages in the segmented susceptor. The gas passages are arranged to heat the sweep gas prior to delivery underneath the wafer. Short purge channels may be provided to deliver some of the sweep gas to regions surrounding the spacers to cause a continuous flow of protective purge gas around the spacers. A common bottom section may cooperate with a plurality of different top sections to form segmented susceptors suitable for supporting various sized wafers.
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公开(公告)号:US6113702A
公开(公告)日:2000-09-05
申请号:US923241
申请日:1997-09-04
Applicant: Michael W. Halpin , Mark R. Hawkins , Derrick W. Foster , Robert M. Vyne , John F. Wengert , Cornelius A. van der Jeugd , Loren R. Jacobs , Frank B. M. Van Bilsen , Matthew Goodman , Hartmann Glenn , Jason M. Layton
Inventor: Michael W. Halpin , Mark R. Hawkins , Derrick W. Foster , Robert M. Vyne , John F. Wengert , Cornelius A. van der Jeugd , Loren R. Jacobs , Frank B. M. Van Bilsen , Matthew Goodman , Hartmann Glenn , Jason M. Layton
IPC: C23C16/458 , A21B2/00 , B24B7/00 , C23C14/00 , C23C16/00 , C23C16/44 , C23C16/46 , C23C16/48 , C23C16/52 , C23F1/00 , C30B31/12 , C30B31/18 , H01L21/00 , H01L21/205 , H01L21/324 , H01L23/34
CPC classification number: C23C16/4586 , H01L21/68735 , H01L21/6875 , H01L21/68792 , H01L2924/0002
Abstract: A wafer support system comprising a segmented susceptor having top and bottom sections and gas flow passages therethrough. A plurality of spacers projecting from a recess formed in the top section of the susceptor support a wafer in spaced relationship with respect to the recess. A sweep gas is introduced to the bottom section of the segmented susceptor and travels through the gas flow passages to exit in at least one circular array of outlets in the recess and underneath the spaced wafer. The sweep gas travels radially outward between the susceptor and wafer to prevent back-side contamination of the wafer. The gas is delivered through a hollow drive shaft and into a multi-armed susceptor support underneath the susceptor. The support arms conduct the sweep gas from the drive shaft to the gas passages in the segmented susceptor. The gas passages are arranged to heat the sweep gas prior to delivery underneath the wafer. Short purge channels may be provided to deliver some of the sweep gas to regions surrounding the spacers to cause a continuous flow of protective purge gas around the spacers. A common bottom section may cooperate with a plurality of different top sections to form segmented susceptors suitable for supporting various sized wafers.
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公开(公告)号:US06491757B2
公开(公告)日:2002-12-10
申请号:US09932795
申请日:2001-08-17
Applicant: Michael W. Halpin , Mark R. Hawkins , Derrick W. Foster , Robert M. Vyne , John F. Wengert , Cornelius A. van der Jeugd , Loren R. Jacobs , Frank B. M. Van Bilsen , Matthew Goodman , Hartmann Glenn , Jason M. Layton
Inventor: Michael W. Halpin , Mark R. Hawkins , Derrick W. Foster , Robert M. Vyne , John F. Wengert , Cornelius A. van der Jeugd , Loren R. Jacobs , Frank B. M. Van Bilsen , Matthew Goodman , Hartmann Glenn , Jason M. Layton
IPC: C23C1600
CPC classification number: C23C16/4586 , H01L21/68735 , H01L21/6875 , H01L21/68792 , H01L2924/0002 , H01L2924/00
Abstract: An apparatus for processing a substrate comprises a susceptor for supporting the substrate, an upper heat source spaced above the susceptor, a lower heat source spaced below the susceptor, and a controller. The controller provides power to the heat sources at a selected ratio between the sources. The controller is configured to vary the ratio during a high temperature processing cycle of a substrate to thereby vary the ratio of the heat provided by the heat sources during the cycle.
Abstract translation: 用于处理衬底的装置包括用于支撑衬底的基座,在基座上方间隔开的上部热源,在该基座下方隔开的下部热源以及控制器。 控制器以源之间选定的比例为热源提供电力。 控制器被配置为在衬底的高温处理循环期间改变比率,从而改变在循环期间由热源提供的热的比率。
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公开(公告)号:US07655093B2
公开(公告)日:2010-02-02
申请号:US11668409
申请日:2007-01-29
Applicant: Michael W. Halpin , Mark R. Hawkins , Derrick W. Foster , Robert M. Vyne , John F. Wengert , Cornelius A. van der Jeugd , Loren R. Jacobs , Frank B. M. Van Bilsen , Matthew Goodman , Hartmann Glenn , Jason M. Layton
Inventor: Michael W. Halpin , Mark R. Hawkins , Derrick W. Foster , Robert M. Vyne , John F. Wengert , Cornelius A. van der Jeugd , Loren R. Jacobs , Frank B. M. Van Bilsen , Matthew Goodman , Hartmann Glenn , Jason M. Layton
CPC classification number: C23C16/4586 , H01L21/68735 , H01L21/6875 , H01L21/68792 , H01L2924/0002 , H01L2924/00
Abstract: A wafer support system comprising a susceptor having top and bottom sections and gas flow passages therethrough. One or more spacers projecting from a recess formed in the top section of the susceptor support a wafer in spaced relationship with respect to the recess. A sweep gas is introduced to the bottom section of the susceptor and travels through the gas flow passages to exit in at least one circular array of outlets in the recess and underneath the spaced wafer. The sweep gas travels radially outward between the susceptor and wafer to prevent back-side contamination of the wafer. The gas is delivered through a hollow drive shaft and into a multi-armed susceptor support underneath the susceptor. The support arms conduct the sweep gas from the drive shaft to the gas passages in the susceptor. The gas passages are arranged to heat the sweep gas prior to delivery underneath the wafer. Short purge channels may be provided to deliver some of the sweep gas to regions surrounding the spacers to cause a continuous flow of protective purge gas around the spacers.
Abstract translation: 一种晶片支撑系统,其包括具有顶部和底部部分以及穿过其的气体流动通道的基座。 从形成在基座的顶部的凹部突出的一个或多个间隔件相对于凹部以间隔的关系支撑晶片。 吹扫气体被引入到基座的底部,并且穿过气体流动通道,以在凹槽中的至少一个圆形阵列的出口和在间隔开的晶片之下排出。 吹扫气体在基座和晶片之间径向向外行进,以防止晶片的背面污染。 气体通过中空驱动轴输送到基座下方的多臂感受器支架中。 支撑臂将吹扫气体从驱动轴传导到基座中的气体通道。 气体通道被布置成在散布在晶片之下之前加热吹扫气体。 可以提供短的吹扫通道以将一些吹扫气体输送到围绕间隔物的区域,以引起隔离物周围的保护性吹扫气体的连续流动。
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6.
公开(公告)号:US06507007B2
公开(公告)日:2003-01-14
申请号:US09739863
申请日:2000-12-18
Applicant: Frank B. M. Van Bilsen
Inventor: Frank B. M. Van Bilsen
IPC: H05B102
CPC classification number: H01L21/67248 , G01J5/00 , G01J5/0003 , G01J5/0007 , G01J2005/0048 , G01J2005/068 , H01L21/67115
Abstract: A CVD processing reactor employs a pyrometer to control temperature ramping. The pyrometer is calibrated between wafer processing by using a thermocouple that senses temperature during a steady state portion of a processing operation.
Abstract translation: CVD处理反应器采用高温计来控制温度斜坡。 通过使用在处理操作的稳态部分期间感测温度的热电偶在晶片处理之间校准高温计。
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公开(公告)号:US06343183B1
公开(公告)日:2002-01-29
申请号:US09605094
申请日:2000-06-27
Applicant: Michael W. Halpin , Mark R. Hawkins , Derrick W. Foster , Robert M. Vyne , John F. Wengert , Cornelius A. van der Jeugd , Loren R. Jacobs , Frank B. M. Van Bilsen , Matthew Goodman , Hartmann Glenn , Jason M. Layton
Inventor: Michael W. Halpin , Mark R. Hawkins , Derrick W. Foster , Robert M. Vyne , John F. Wengert , Cornelius A. van der Jeugd , Loren R. Jacobs , Frank B. M. Van Bilsen , Matthew Goodman , Hartmann Glenn , Jason M. Layton
IPC: A21B200
CPC classification number: C23C16/4586 , H01L21/68735 , H01L21/6875 , H01L21/68792 , H01L2924/0002 , H01L2924/00
Abstract: A wafer support system comprising a segmented susceptor having top and bottom sections and gas flow passages therethrough. A plurality of spacers projecting from a recess formed in the top section of the susceptor support a wafer in spaced relationship with respect to the recess. A sweep gas is introduced to the bottom section of the segmented susceptor and travels through the gas flow passages to exit in at least one circular array of outlets in the recess and underneath the spaced wafer. The sweep gas travels radially outward between the susceptor and wafer to prevent back-side contamination of the wafer. The gas is delivered through a hollow drive shaft and into a multi-armed susceptor support underneath the susceptor. The support arms conduct the sweep gas from the drive shaft to the gas passages in the segmented susceptor. The gas passages are arranged to heat the sweep gas prior to delivery underneath the wafer. Short purge channels may be provided to deliver some of the sweep gas to regions surrounding the spacers to cause a continuous flow of protective purge gas around the spacers. A common bottom section may cooperate with a plurality of different top sections to form segmented susceptors suitable for supporting various sized wafers.
Abstract translation: 一种晶片支撑系统,其包括具有顶部和底部部分的分段式基座以及穿过其中的气体流动通道。 从形成在基座的顶部的凹部突出的多个间隔件相对于凹部间隔开地支撑晶片。 吹扫气体被引入到分段基座的底部,并且穿过气体流动通道,在凹槽中的至少一个圆形阵列的出口和间隔开的晶片之下排出。 吹扫气体在基座和晶片之间径向向外行进,以防止晶片的背面污染。 气体通过中空驱动轴输送到基座下方的多臂感受器支架中。 支撑臂将吹扫气体从驱动轴传导到分段基座中的气体通道。 气体通道被布置成在散布在晶片之下之前加热吹扫气体。 可以提供短的吹扫通道以将一些吹扫气体输送到围绕间隔物的区域,以引起隔离物周围的保护性吹扫气体的连续流动。 共同的底部部分可以与多个不同的顶部部分配合以形成适合于支撑各种尺寸的晶片的分段式基座。
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8.
公开(公告)号:US06191399B1
公开(公告)日:2001-02-20
申请号:US09495765
申请日:2000-02-01
Applicant: Frank B. M. Van Bilsen
Inventor: Frank B. M. Van Bilsen
IPC: H05B102
CPC classification number: H01L21/67248 , G01J5/00 , G01J5/0003 , G01J5/0007 , G01J2005/0048 , G01J2005/068 , H01L21/67115
Abstract: A CVD processing reactor employs a pyrometer to control temperature ramping. The pyrometer is calibrated between wafer processing by using a thermocouple that senses temperature during a steady state portion of a processing operation.
Abstract translation: CVD处理反应器采用高温计来控制温度斜坡。 通过使用在处理操作的稳态部分期间感测温度的热电偶在晶片处理之间校准高温计。
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