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公开(公告)号：US06093252A
公开(公告)日：2000-07-25
申请号：US637616
申请日：1996-04-25
Applicant: John F. Wengert , Loren R. Jacobs , Michael W. Halpin , Derrick W. Foster , Cornelius A. van der Jeugd , Robert M. Vyne , Mark R. Hawkins
Inventor： John F. Wengert , Loren R. Jacobs , Michael W. Halpin , Derrick W. Foster , Cornelius A. van der Jeugd , Robert M. Vyne , Mark R. Hawkins
IPC: B01J3/00 , C23C16/44 , C23C16/455 , C23C16/46 , C23C16/48 , H01L21/00 , H01L21/205 , H01L21/687 , C23C16/00
CPC classification number: B01J3/006 , C23C16/44 , C23C16/455 , C23C16/45502 , C23C16/46 , C23C16/481 , H01L21/67115 , H01L21/68735 , H01L21/68785
Abstract: An improved chemical vapor deposition reaction chamber having an internal support plate to enable reduced pressure processing. The chamber has a vertical-lateral lenticular cross-section with a wide horizontal dimension and a shorter vertical dimension between bi-convex upper and lower walls. A central horizontal support plate is provided between two lateral side rails of the chamber. A large rounded rectangular aperture is formed in the support plate for positioning a rotatable susceptor on which a wafer is placed. The shaft of the susceptor extends downward through the aperture and through a lower tube depending from the chamber. The support plate segregates the reaction chamber into an upper region and a lower region, with purge gas being introduced through the lower tube into the lower region to prevent unwanted deposition therein. A temperature compensation ring is provided surrounding the susceptor and supported by fingers connected to the support plate. The temperature compensation ring may be circular or may be built out to conform to the rounded rectangular shape of the support plate aperture. The ring may extend farther downstream from the susceptor than upstream. A separate sacrificial quartz plate may be provided between the circular temperature compensation ring and the rounded rectangular aperture. The quartz plate may have a horizontal portion and a vertical lip in close abutment with the aperture to prevent devitrification of the support plate. A gas injector abuts an inlet flange of the chamber and injects process gas into the upper region and purge gas into the lower region. The gas injector includes a plurality of independently controlled channels disposed laterally across the chamber, the channels merging at an outlet of the injector to allow mixing of the adjacent longitudinal edges of the separate flows well before reaching the wafer.
Abstract translation: 改进的化学气相沉积反应室具有内部支撑板以实现减压处理。 该腔室具有垂直横向的透镜状横截面，在双凸上壁和下壁之间具有宽的水平尺寸和较短的垂直尺寸。 中央水平支撑板设置在腔室的两个侧向侧轨之间。 在支撑板中形成大的圆形矩形孔，用于定位其上放置晶片的可旋转基座。 基座的轴向下延伸穿过孔，并通过从腔室垂下的下管。 支撑板将反应室分离成上部区域和下部区域，其中吹扫气体通过下部管道被引入下部区域，以防止其中不希望的沉积。 温度补偿环设置在基座周围并由连接到支撑板的手指支撑。 温度补偿环可以是圆形的，或者可以被构造成符合支撑板孔的圆形矩形形状。 环可以比上游更远离基座延伸下游。 可以在环形温度补偿环和圆形矩形孔之间设置单独的牺牲石英板。 石英板可以具有与孔紧密邻接的水平部分和垂直唇缘，以防止支撑板的失透。 气体喷射器邻接室的入口凸缘并将工艺气体注入上部区域并将气体吹入下部区域。 气体喷射器包括跨过室横向设置的多个独立控制的通道，通道在喷射器的出口处汇合，以允许在到达晶片之前将分离的流的相邻纵向边缘混合。
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公开(公告)号：US5823295A
公开(公告)日：1998-10-20
申请号：US624151
申请日：1996-03-29
Applicant: Bobby D. Griffith , Mark R. Hawkins , Dean J. Schlickbernd , Steven J. Zmuda
Inventor： Bobby D. Griffith , Mark R. Hawkins , Dean J. Schlickbernd , Steven J. Zmuda
CPC classification number: F16N7/385 , F16N29/02 , F16N2230/10 , F16N2250/04
Abstract: A control system for lubricating a work machine is provided. The control system includes a lubricant distribution system, a charging system adapted to drive the lubricant distribution system, a sensor for determining the operating state of the charging system, and a device for calculating a time interval being dependent upon a previous lubricating event. The control also includes a device for producing a lubrication signal in response to the time interval reaching a predetermined interval constant.
Abstract translation: 提供了一种润滑作业机械的控制系统。 控制系统包括润滑剂分配系统，适于驱动润滑剂分配系统的充电系统，用于确定充电系统的运行状态的传感器，以及用于根据先前润滑事件来计算时间间隔的装置。 该控制还包括响应于达到预定间隔常数的时间间隔产生润滑信号的装置。
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公开(公告)号：US5511457A
公开(公告)日：1996-04-30
申请号：US334724
申请日：1994-11-04
Applicant: Mark R. Hawkins , Joel L. Peterson , Kenneth E. Poppe
Inventor： Mark R. Hawkins , Joel L. Peterson , Kenneth E. Poppe
Abstract: A steering control system for an autonomous machine has a manual steering control valve for directing fluid from a pump to either a head end chamber or a rod end chamber of a hydraulic steering actuator. In one embodiment, an electrically actuated steering valve device is disposed in series flow relationship between the pump and the manual steering control valve and is operative to direct fluid from the pump to the head end and rod end chambers. In another embodiment, a electrically actuated device mechanically actuates the manual steering control valve for steering the machine.
Abstract translation: 用于自主机器的转向控制系统具有用于将流体从泵引导到液压转向致动器的头端室或杆端室的手动转向控制阀。 在一个实施例中，电动转向阀装置在泵和手动转向控制阀之间以串联流动关系布置，并且可操作以将流体从泵引导到头端和杆端室。 在另一个实施例中，电致动装置机械地致动用于转向机器的手动转向控制阀。
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公开(公告)号：US4828224A
公开(公告)日：1989-05-09
申请号：US108771
申请日：1987-10-15
Applicant: Richard Crabb , McDonald Robinson , Mark R. Hawkins , Dennis L. Goodwin , Armand P. Ferro , Albert E. Ozias , Wiebe B. deBoer
Inventor： Richard Crabb , McDonald Robinson , Mark R. Hawkins , Dennis L. Goodwin , Armand P. Ferro , Albert E. Ozias , Wiebe B. deBoer
CPC classification number: C30B29/06 , C30B25/10 , Y10S414/137 , Y10S414/139
Abstract: This invention discloses a system for chemically depositing various materials carried by a reactant gas onto substrates for manufacturing semiconductor devices. The system includes special loading and unloading sub-system for placement of substrates to be processed into the system and subsequent extraction without contamination of the system. A special substrate handling sub-system is provided for moving the substrates to and from at least one processing sub-system without physically contacting the planar surfaces of the substrates. The processing sub-system includes a horizontal gas flow reaction chamber having a rotatable susceptor therein for rotating the single substrate supportable thereon about an axis that is normal to the center of the substrate for averaging of the temperature and reactant gas concentration variables. The processing sub-system is separated from the handling sub-system by a special isolation valve and a gas injection device is used to inject the gas into the reaction chamber with a predetermined velocity profile. A special temperature sensing arrangement is provided in the processing sub-system for controlling a radiant heating sub-system which is provided above and below the reaction chamber.
Abstract translation: 本发明公开了一种用于将由反应气体承载的各种材料化学沉积到用于制造半导体器件的衬底上的系统。 该系统包括专用的装载和卸载子系统，用于将要处理的基板放置在系统中，随后提取而不会污染系统。 提供了一种特殊的基板处理子系统，用于将基板移动到至少一个处理子系统并且从至少一个处理子系统移动，而不物理地接触基板的平面表面。 处理子系统包括水平气流反应室，其中具有可旋转的基座，用于使可支撑在其上的单个基板绕垂直于基板中心的轴线旋转，以平均温度和反应气体浓度变量。 处理子系统通过特殊隔离阀与处理子系统分离，并且气体注入装置用于以预定的速度分布将气体注入反应室。 在处理子系统中设置有用于控制设置在反应室上方和下方的辐射加热子系统的特殊温度检测装置。
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公开(公告)号：US06692576B2
公开(公告)日：2004-02-17
申请号：US10243579
申请日：2002-09-13
Applicant: Michael W. Halpin , Mark R. Hawkins , Derrick W. Foster , Robert M. Vyne , John F. Wengert , Cornelius A. van der Jeugd , Loren R. Jacobs
Inventor： Michael W. Halpin , Mark R. Hawkins , Derrick W. Foster , Robert M. Vyne , John F. Wengert , Cornelius A. van der Jeugd , Loren R. Jacobs
IPC: C23L1600
CPC classification number: C23C16/4586 , H01L21/68735 , H01L21/6875 , H01L21/68792 , H01L2924/0002 , H01L2924/00
Abstract: A wafer support system comprising a segmented susceptor having top and bottom sections and gas flow passages therethrough. A plurality of spacers projecting from a recess formed in the top section of the susceptor support a wafer in spaced relationship with respect to the recess. A sweep gas is introduced to the bottom section of the segmented susceptor and travels through the gas flow passages to exit in at least one circular array of outlets in the recess and underneath the spaced wafer. The sweep gas travels radially outward between the susceptor and wafer to prevent back-side contamination of the wafer. The gas is delivered through a hollow drive shaft and into a multi-armed susceptor support underneath the susceptor. The support arms conduct the sweep gas from the drive shaft to the gas passages in the segmented susceptor. The gas passages are arranged to heat the sweep gas prior to delivery underneath the wafer. Short purge channels may be provided to deliver some of the sweep gas to regions surrounding the spacers to cause a continuous flow of protective purge gas around the spacers. A common bottom section may cooperate with a plurality of different top sections to form segmented susceptors suitable for supporting various sized wafers.
Abstract translation: 一种晶片支撑系统，其包括具有顶部和底部部分的分段式基座以及穿过其中的气体流动通道。 从形成在基座的顶部的凹部突出的多个间隔件相对于凹部间隔开地支撑晶片。 吹扫气体被引入到分段基座的底部，并且穿过气体流动通道，在凹槽中的至少一个圆形阵列的出口和间隔开的晶片之下排出。 吹扫气体在基座和晶片之间径向向外行进，以防止晶片的背面污染。 气体通过中空驱动轴输送到基座下方的多臂感受器支架中。 支撑臂将吹扫气体从驱动轴传导到分段基座中的气体通道。 气体通道被布置成在散布在晶片之下之前加热吹扫气体。 可以提供短的吹扫通道以将一些吹扫气体输送到围绕间隔物的区域，以引起隔离物周围的保护性吹扫气体的连续流动。 共同的底部部分可以与多个不同的顶部部分配合以形成适合于支撑各种尺寸的晶片的分段式基座。
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Patent Agency Ranking
公开(公告)号：US5819684A
公开(公告)日：1998-10-13
申请号：US661461
申请日：1996-06-10
Applicant: Mark R. Hawkins , McDonald Robinson
Inventor： Mark R. Hawkins , McDonald Robinson
IPC: C23C16/455 , C30B25/14 , C23C16/00
CPC classification number: C30B25/14 , C23C16/455
Abstract: The present invention relates to improved injectors for use in CVD reactor systems, and more specifically for use in epitaxial deposition systems for processing a single wafer-at-a-time. The improved injectors of the present invention are used to provide a predetermined desired shaped velocity profile for the injected reactant gases for insuring a more uniform deposition on a single wafer to be processed within the reactor system. In the first embodiment, the reactant gas is fed into a horizontal gas distribution manifold cavity and distributed horizontally in both directions. The gas then passes through a manifold wall having a pattern of predetermined sized and spaced apertures therein. The size of the apertures and the distribution of these sizes, shapes the resultant velocity profile to a desired pattern. Since the volume flow rate through each aperture of the manifold member increases as the diameter of the aperture increases, the resultant velocity profile produced will have its maximum at the center where the largest apertures exist and its minimum at the sides where the smallest apertures exist and the velocity profile will have a desired predetermined shape as it exits the gas delivery chamber and is turned 90.degree. for injection into the input of the reaction chamber. In an alternate embodiment, a plurality of linearly dimensioned slots are provided between spacer legs for producing the predetermined desired shaped velocity profile.
Abstract translation: 本发明涉及用于CVD反应器系统的改进喷射器，更具体地涉及用于一次处理单个晶片的外延沉积系统。 本发明的改进的喷射器用于为注入的反应气体提供预定的期望的成形速度分布，以确保在反应器系统内待处理的单个晶片上更均匀的沉积。 在第一实施例中，反应气体被供给到水平气体分配歧管腔中，并且沿两个方向水平分布。 然后气体通过其中具有预定尺寸和间隔开的孔的图案的歧管壁。 孔的尺寸和这些尺寸的分布将合成的速度分布形成期望的图案。 由于通过歧管构件的每个孔口的体积流量随着孔径的增加而增加，所产生的合成速度分布将在存在最大孔径的中心处具有最大值，并且在存在最小孔隙的侧面处其最小值; 当离开气体输送室时，速度分布将具有期望的预定形状，并且转动90°以注入反应室的输入。 在替代实施例中，在间隔腿之间提供多个线性尺寸的狭槽，用于产生预定的所需成形速度分布。
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公开(公告)号：US5525157A
公开(公告)日：1996-06-11
申请号：US514420
申请日：1995-08-11
Applicant: Mark R. Hawkins , McDonald Robinson
Inventor： Mark R. Hawkins , McDonald Robinson
IPC: C23C16/455 , C30B25/14 , C23C16/00
CPC classification number: C30B25/14 , C23C16/455
Abstract: The present invention relates to improved injectors for use in CVD reactor systems, and more specifically for use in epitaxial deposition systems for processing a single wafer-at-a-time. The improved injectors of the present invention are used to provide a predetermined desired shaped velocity profile for the injected reactant gases for insuring a more uniform deposition on a single wafer to be processed within the reactor system. In the first embodiment, the reactant gas is fed into a horizontal gas distribution manifold cavity and distributed horizontally in both directions. The gas then passes through a manifold wall having a pattern of predetermined sized and spaced apertures therein. The size of the apertures and the distribution of these sizes, shapes the resultant velocity profile to a desired pattern. Since the volume flow rate through each aperture of the manifold member increases as the diameter of the aperture increases, the resultant velocity profile produced will have its maximum at the center where-the largest apertures exist and its minimum at the sides where the smallest apertures exist and the velocity profile will have a desired predetermined shape as it exits the gas delivery chamber and is turned 90 for injection into the input of the reaction chamber. In an alternate embodiment, a plurality of linearly dimensioned slots are provided between spacer legs for producing the predetermined desired shaped velocity profile.
Abstract translation: 本发明涉及用于CVD反应器系统的改进喷射器，更具体地涉及用于一次处理单个晶片的外延沉积系统。 本发明的改进的喷射器用于为注入的反应气体提供预定的期望的成形速度分布，以确保在反应器系统内待处理的单个晶片上更均匀的沉积。 在第一实施例中，反应气体被供给到水平气体分配歧管腔中，并且沿两个方向水平分布。 然后气体通过其中具有预定尺寸和间隔开的孔的图案的歧管壁。 孔的尺寸和这些尺寸的分布将合成的速度分布形成期望的图案。 由于通过歧管构件的每个孔的体积流量随着孔径的增加而增加，所产生的合成速度分布将在其中存在最大孔的中心处具有最大值，并且在存在最小孔的侧面处的最小孔 并且速度分布在其离开气体输送室时将具有期望的预定形状，并且转动90以注入反应室的输入。 在替代实施例中，在间隔腿之间提供多个线性尺寸的狭槽，用于产生预定的所需成形速度分布。
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公开(公告)号：US5020475A
公开(公告)日：1991-06-04
申请号：US315723
申请日：1989-02-24
Applicant: Richard Crabb , McDonald Robinson , Mark R. Hawkins , Dennis L. Goodwin , Armand P. Ferro
Inventor： Richard Crabb , McDonald Robinson , Mark R. Hawkins , Dennis L. Goodwin , Armand P. Ferro
Abstract: A substrate loading subsystem receives substrates from an external source and delivers them to an input port. A substrate pickup transports the substrates serially from the input port to a delivery port of a processing subsystem wherein the substrates are subjected to a reactant gas in a reaction chamber. After completion of the chemical vapor deposition, the substrate pick up serially transports the substrates to an outlet port wherefrom they are off loaded.
Abstract translation: 衬底加载子系统从外部源接收衬底并将其传送到输入端口。 基板拾取器将基板从输入端口顺序地输送到处理子系统的输送端口，其中基板在反应室中经受反应气体。 在化学气相沉积完成之后，衬底拾取器将衬底串联地输送到出口端口，在那里它们被卸载。
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公开(公告)号：US07186298B2
公开(公告)日：2007-03-06
申请号：US10642799
申请日：2003-08-18
Applicant: Michael W. Halpin , Mark R. Hawkins , Derrick W. Foster , Robert M. Vyne , John F. Wengert , Cornelius A. van der Jeugd , Loren R. Jacobs
Inventor： Michael W. Halpin , Mark R. Hawkins , Derrick W. Foster , Robert M. Vyne , John F. Wengert , Cornelius A. van der Jeugd , Loren R. Jacobs
CPC classification number: C23C16/4586 , H01L21/68735 , H01L21/6875 , H01L21/68792 , H01L2924/0002 , H01L2924/00
Abstract: A wafer support system comprising a segmented susceptor having top and bottom sections and gas flow passages therethrough. A plurality of spacers projecting from a recess formed in the top section of the susceptor support a wafer in spaced relationship with respect to the recess. A sweep gas is introduced to the bottom section of the segmented susceptor and travels through the gas flow passages to exit in at least one circular array of outlets in the recess and underneath the spaced wafer. The sweep gas travels radially outward between the susceptor and wafer to prevent back-side contamination of the wafer. The gas is delivered through a hollow drive shaft and into a multi-armed susceptor support underneath the susceptor. The support arms conduct the sweep gas from the drive shaft to the gas passages in the segmented susceptor. The gas passages are arranged to heat the sweep gas prior to delivery underneath the wafer. Short purge channels may be provided to deliver some of the sweep gas to regions surrounding the spacers to cause a continuous flow of protective purge gas around the spacers. A common bottom section may cooperate with a plurality of different top sections to form segmented susceptors suitable for supporting various sized wafers.
Abstract translation: 一种晶片支撑系统，其包括具有顶部和底部部分的分段式基座以及穿过其中的气体流动通道。 从形成在基座的顶部的凹部突出的多个间隔件相对于凹部间隔开地支撑晶片。 吹扫气体被引入到分段基座的底部，并且穿过气体流动通道，在凹槽中的至少一个圆形阵列的出口和间隔开的晶片之下排出。 吹扫气体在基座和晶片之间径向向外行进，以防止晶片的背面污染。 气体通过中空驱动轴输送到基座下方的多臂感受器支架中。 支撑臂将吹扫气体从驱动轴传导到分段基座中的气体通道。 气体通道被布置成在散布在晶片之下之前加热吹扫气体。 可以提供短的吹扫通道以将一些吹扫气体输送到围绕间隔物的区域，以引起隔离物周围的保护性吹扫气体的连续流动。 共同的底部部分可以与多个不同的顶部部分配合以形成适合于支撑各种尺寸的晶片的分段式基座。
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公开(公告)号：US06454866B1
公开(公告)日：2002-09-24
申请号：US09614481
申请日：2000-07-10
Applicant: Michael W. Halpin , Mark R. Hawkins , Derrick W. Foster , Robert M. Vyne , John F. Wengert , Cornelius A. van der Jeugd , Loren R. Jacobs , Frank B. M. Van Bilsen , Matthew Goodman , Hartmann Glenn , Jason M. Layton
Inventor： Michael W. Halpin , Mark R. Hawkins , Derrick W. Foster , Robert M. Vyne , John F. Wengert , Cornelius A. van der Jeugd , Loren R. Jacobs , Frank B. M. Van Bilsen , Matthew Goodman , Hartmann Glenn , Jason M. Layton
IPC: C23C1600
CPC classification number: C23C16/4586 , H01L21/68735 , H01L21/6875 , H01L21/68792 , H01L2924/0002 , H01L2924/00
Abstract: A wafer support system comprising a segmented susceptor having top and bottom sections and gas flow passages therethrough. A plurality of spacers projecting from a recess formed in the top section of the susceptor support a wafer in spaced relationship with respect to the recess. A sweep gas is introduced to the bottom section of the segmented susceptor and travels through the gas flow passages to exit in at least one circular array of outlets in the recess and underneath the spaced wafer. The sweep gas travels radially outward between the susceptor and wafer to prevent back-side contamination of the wafer. The gas is delivered through a hollow drive shaft and into a multi-armed susceptor support underneath the susceptor. The support arms conduct the sweep gas from the drive shaft to the gas passages in the segmented susceptor. The gas passages are arranged to heat the sweep gas prior to delivery underneath the wafer. Short purge channels may be provided to deliver some of the sweep gas to regions surrounding the spacers to cause a continuous flow of protective purge gas around the spacers. A common bottom section may cooperate with a plurality of different top sections to form segmented susceptors suitable for supporting various sized wafers.
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