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    Wafer support system
    1.
    发明授权
    Wafer support system 失效
    晶圆支撑系统

    公开(公告)号：US06692576B2

    公开(公告)日：2004-02-17

    申请号：US10243579

    申请日：2002-09-13

    Applicant: Michael W. Halpin ,  Mark R. Hawkins ,  Derrick W. Foster ,  Robert M. Vyne ,  John F. Wengert ,  Cornelius A. van der Jeugd ,  Loren R. Jacobs

    Inventor： Michael W. Halpin ,  Mark R. Hawkins ,  Derrick W. Foster ,  Robert M. Vyne ,  John F. Wengert ,  Cornelius A. van der Jeugd ,  Loren R. Jacobs

    IPC: C23L1600

    CPC classification number: C23C16/4586 ,  H01L21/68735 ,  H01L21/6875 ,  H01L21/68792 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A wafer support system comprising a segmented susceptor having top and bottom sections and gas flow passages therethrough. A plurality of spacers projecting from a recess formed in the top section of the susceptor support a wafer in spaced relationship with respect to the recess. A sweep gas is introduced to the bottom section of the segmented susceptor and travels through the gas flow passages to exit in at least one circular array of outlets in the recess and underneath the spaced wafer. The sweep gas travels radially outward between the susceptor and wafer to prevent back-side contamination of the wafer. The gas is delivered through a hollow drive shaft and into a multi-armed susceptor support underneath the susceptor. The support arms conduct the sweep gas from the drive shaft to the gas passages in the segmented susceptor. The gas passages are arranged to heat the sweep gas prior to delivery underneath the wafer. Short purge channels may be provided to deliver some of the sweep gas to regions surrounding the spacers to cause a continuous flow of protective purge gas around the spacers. A common bottom section may cooperate with a plurality of different top sections to form segmented susceptors suitable for supporting various sized wafers.

    Abstract translation: 一种晶片支撑系统，其包括具有顶部和底部部分的分段式基座以及穿过其中的气体流动通道。 从形成在基座的顶部的凹部突出的多个间隔件相对于凹部间隔开地支撑晶片。 吹扫气体被引入到分段基座的底部，并且穿过气体流动通道，在凹槽中的至少一个圆形阵列的出口和间隔开的晶片之下排出。 吹扫气体在基座和晶片之间径向向外行进，以防止晶片的背面污染。 气体通过中空驱动轴输送到基座下方的多臂感受器支架中。 支撑臂将吹扫气体从驱动轴传导到分段基座中的气体通道。 气体通道被布置成在散布在晶片之下之前加热吹扫气体。 可以提供短的吹扫通道以将一些吹扫气体输送到围绕间隔物的区域，以引起隔离物周围的保护性吹扫气体的连续流动。 共同的底部部分可以与多个不同的顶部部分配合以形成适合于支撑各种尺寸的晶片的分段式基座。

    Wafer support system
    2.
    发明授权
    Wafer support system 失效
    晶圆支撑系统

    公开(公告)号：US07655093B2

    公开(公告)日：2010-02-02

    申请号：US11668409

    申请日：2007-01-29

    Applicant: Michael W. Halpin ,  Mark R. Hawkins ,  Derrick W. Foster ,  Robert M. Vyne ,  John F. Wengert ,  Cornelius A. van der Jeugd ,  Loren R. Jacobs ,  Frank B. M. Van Bilsen ,  Matthew Goodman ,  Hartmann Glenn ,  Jason M. Layton

    Inventor： Michael W. Halpin ,  Mark R. Hawkins ,  Derrick W. Foster ,  Robert M. Vyne ,  John F. Wengert ,  Cornelius A. van der Jeugd ,  Loren R. Jacobs ,  Frank B. M. Van Bilsen ,  Matthew Goodman ,  Hartmann Glenn ,  Jason M. Layton

    IPC: H01L21/00 ,  C23C14/00 ,  C23C16/00

    CPC classification number: C23C16/4586 ,  H01L21/68735 ,  H01L21/6875 ,  H01L21/68792 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A wafer support system comprising a susceptor having top and bottom sections and gas flow passages therethrough. One or more spacers projecting from a recess formed in the top section of the susceptor support a wafer in spaced relationship with respect to the recess. A sweep gas is introduced to the bottom section of the susceptor and travels through the gas flow passages to exit in at least one circular array of outlets in the recess and underneath the spaced wafer. The sweep gas travels radially outward between the susceptor and wafer to prevent back-side contamination of the wafer. The gas is delivered through a hollow drive shaft and into a multi-armed susceptor support underneath the susceptor. The support arms conduct the sweep gas from the drive shaft to the gas passages in the susceptor. The gas passages are arranged to heat the sweep gas prior to delivery underneath the wafer. Short purge channels may be provided to deliver some of the sweep gas to regions surrounding the spacers to cause a continuous flow of protective purge gas around the spacers.

    Abstract translation: 一种晶片支撑系统，其包括具有顶部和底部部分以及穿过其的气体流动通道的基座。 从形成在基座的顶部的凹部突出的一个或多个间隔件相对于凹部以间隔的关系支撑晶片。 吹扫气体被引入到基座的底部，并且穿过气体流动通道，以在凹槽中的至少一个圆形阵列的出口和在间隔开的晶片之下排出。 吹扫气体在基座和晶片之间径向向外行进，以防止晶片的背面污染。 气体通过中空驱动轴输送到基座下方的多臂感受器支架中。 支撑臂将吹扫气体从驱动轴传导到基座中的气体通道。 气体通道被布置成在散布在晶片之下之前加热吹扫气体。 可以提供短的吹扫通道以将一些吹扫气体输送到围绕间隔物的区域，以引起隔离物周围的保护性吹扫气体的连续流动。

    Process chamber with downstream getter plate
    3.
    发明授权
    Process chamber with downstream getter plate 失效
    具有下游吸气板的处理室

    公开(公告)号：US06464792B1

    公开(公告)日：2002-10-15

    申请号：US09613437

    申请日：2000-07-11

    Applicant: John F. Wengert ,  Loren R. Jacobs ,  Michael W. Halpin ,  Derrick W. Foster ,  Cornelius A. van der Jeugd ,  Robert M. Vyne ,  Mark R. Hawkins

    Inventor： John F. Wengert ,  Loren R. Jacobs ,  Michael W. Halpin ,  Derrick W. Foster ,  Cornelius A. van der Jeugd ,  Robert M. Vyne ,  Mark R. Hawkins

    IPC: C23C1600

    CPC classification number: B01J3/006 ,  C23C16/44 ,  C23C16/455 ,  C23C16/45502 ,  C23C16/46 ,  C23C16/481 ,  H01L21/67115 ,  H01L21/68735 ,  H01L21/68785

    Abstract: An improved chemical vapor deposition reaction chamber having an internal support plate to enable reduced pressure processing. The chamber has a vertical-lateral lenticular cross-section with a wide horizontal dimension and a shorter vertical dimension between bi-convex upper and lower walls. A central horizontal support plate is provided between two lateral side rails of the chamber. A large rounded rectangular aperture is formed in the support plate for positioning a rotatable susceptor on which a wafer is placed. The shaft of the susceptor extends downward through the aperture and through a lower tube depending from the chamber. The support plate segregates the reaction chamber into an upper region and a lower region, with purge gas being introduced through the lower tube into the lower region to prevent unwanted deposition therein. A temperature compensation ring is provided surrounding the susceptor and supported by fingers connected to the support plate. The temperature compensation ring may be circular or may be built out to conform to the rounded rectangular shape of the support plate aperture. The ring may extend farther downstream from the susceptor than upstream. A separate sacrificial quartz plate may be provided between the circular temperature compensation ring and the rounded rectangular aperture. The quartz plate may have a horizontal portion and a vertical lip in close abutment with the aperture to prevent devitrification of the support plate. A gas injector abuts an inlet flange of the chamber and injects process gas into the upper region and purge gas into the lower region. The gas injector includes a plurality of independently controlled channels disposed laterally across the chamber, the channels merging at an outlet of the injector to allow mixing of the adjacent longitudinal edges of the separate flows well before reaching the wafer.

    Abstract translation: 改进的化学气相沉积反应室具有内部支撑板以实现减压处理。 该腔室具有垂直横向的透镜状横截面，在双凸上壁和下壁之间具有宽的水平尺寸和较短的垂直尺寸。 中央水平支撑板设置在腔室的两个侧向侧轨之间。 在支撑板中形成大的圆形矩形孔，用于定位其上放置晶片的可旋转基座。 基座的轴向下延伸穿过孔，并通过从腔室垂下的下管。 支撑板将反应室分离成上部区域和下部区域，其中吹扫气体通过下部管道被引入下部区域，以防止其中不希望的沉积。 温度补偿环设置在基座周围并由连接到支撑板的手指支撑。 温度补偿环可以是圆形的，或者可以被构造成符合支撑板孔的圆形矩形形状。 环可以比上游更远离基座延伸下游。 可以在环形温度补偿环和圆形矩形孔之间设置单独的牺牲石英板。 石英板可以具有与孔紧密邻接的水平部分和垂直唇缘，以防止支撑板的失透。 气体喷射器邻接室的入口凸缘并将工艺气体注入上部区域并将气体吹入下部区域。 气体喷射器包括跨过室横向设置的多个独立控制的通道，通道在喷射器的出口处汇合，以允许在到达晶片之前将分离的流的相邻纵向边缘混合。

    Wafer support system
    4.
    发明授权
    Wafer support system 有权
    晶圆支撑系统

    公开(公告)号：US06343183B1

    公开(公告)日：2002-01-29

    申请号：US09605094

    申请日：2000-06-27

    Applicant: Michael W. Halpin ,  Mark R. Hawkins ,  Derrick W. Foster ,  Robert M. Vyne ,  John F. Wengert ,  Cornelius A. van der Jeugd ,  Loren R. Jacobs ,  Frank B. M. Van Bilsen ,  Matthew Goodman ,  Hartmann Glenn ,  Jason M. Layton

    Inventor： Michael W. Halpin ,  Mark R. Hawkins ,  Derrick W. Foster ,  Robert M. Vyne ,  John F. Wengert ,  Cornelius A. van der Jeugd ,  Loren R. Jacobs ,  Frank B. M. Van Bilsen ,  Matthew Goodman ,  Hartmann Glenn ,  Jason M. Layton

    IPC: A21B200

    CPC classification number: C23C16/4586 ,  H01L21/68735 ,  H01L21/6875 ,  H01L21/68792 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A wafer support system comprising a segmented susceptor having top and bottom sections and gas flow passages therethrough. A plurality of spacers projecting from a recess formed in the top section of the susceptor support a wafer in spaced relationship with respect to the recess. A sweep gas is introduced to the bottom section of the segmented susceptor and travels through the gas flow passages to exit in at least one circular array of outlets in the recess and underneath the spaced wafer. The sweep gas travels radially outward between the susceptor and wafer to prevent back-side contamination of the wafer. The gas is delivered through a hollow drive shaft and into a multi-armed susceptor support underneath the susceptor. The support arms conduct the sweep gas from the drive shaft to the gas passages in the segmented susceptor. The gas passages are arranged to heat the sweep gas prior to delivery underneath the wafer. Short purge channels may be provided to deliver some of the sweep gas to regions surrounding the spacers to cause a continuous flow of protective purge gas around the spacers. A common bottom section may cooperate with a plurality of different top sections to form segmented susceptors suitable for supporting various sized wafers.

    Abstract translation: 一种晶片支撑系统，其包括具有顶部和底部部分的分段式基座以及穿过其中的气体流动通道。 从形成在基座的顶部的凹部突出的多个间隔件相对于凹部间隔开地支撑晶片。 吹扫气体被引入到分段基座的底部，并且穿过气体流动通道，在凹槽中的至少一个圆形阵列的出口和间隔开的晶片之下排出。 吹扫气体在基座和晶片之间径向向外行进，以防止晶片的背面污染。 气体通过中空驱动轴输送到基座下方的多臂感受器支架中。 支撑臂将吹扫气体从驱动轴传导到分段基座中的气体通道。 气体通道被布置成在散布在晶片之下之前加热吹扫气体。 可以提供短的吹扫通道以将一些吹扫气体输送到围绕间隔物的区域，以引起隔离物周围的保护性吹扫气体的连续流动。 共同的底部部分可以与多个不同的顶部部分配合以形成适合于支撑各种尺寸的晶片的分段式基座。

    POROUS SUBSTRATE HOLDER WITH THINNED PORTIONS
    5.
    发明申请
    POROUS SUBSTRATE HOLDER WITH THINNED PORTIONS 审中-公开
    多孔衬底保持架

    公开(公告)号：US20090280248A1

    公开(公告)日：2009-11-12

    申请号：US12116114

    申请日：2008-05-06

    Applicant: Matthew G. Goodman ,  Robert M. Vyne

    Inventor： Matthew G. Goodman ,  Robert M. Vyne

    IPC: C23C16/44

    CPC classification number: C23C16/4581 ,  H01L21/68735 ,  H01L21/68757 ,  H01L21/68785 ,  H01L21/68792

    Abstract: A substrate support system comprises a substrate holder for supporting a substrate. The substrate holder comprises a central portion sized and shaped to extend beneath most or all of a substrate supported on the substrate holder. The central portion has one or more recesses defining thinned portions of the central portion. The one or more thinned portions may comprise at least about 10% of an upper or lower surface of the central portion. The central portion is formed of a porous material, such as a material having a porosity between about 10-40%, configured to allow gas flow therethrough.

    Abstract translation: 衬底支撑系统包括用于支撑衬底的衬底支架。 衬底保持器包括中心部分，其尺寸和形状设置成在支撑在衬底保持器上的衬底的大部分或全部下方延伸。 中心部分具有限定中心部分的薄化部分的一个或多个凹部。 一个或多个变薄的部分可以包括中心部分的上表面或下表面的至少约10％。 中心部分由诸如具有约10-40％之间的孔隙率的材料的多孔材料形成，构造成允许气体流过其中。

    Process chamber with inner support
    6.
    发明授权
    Process chamber with inner support 失效
    具有内部支撑的过程室

    公开(公告)号：US06093252A

    公开(公告)日：2000-07-25

    申请号：US637616

    申请日：1996-04-25

    Applicant: John F. Wengert ,  Loren R. Jacobs ,  Michael W. Halpin ,  Derrick W. Foster ,  Cornelius A. van der Jeugd ,  Robert M. Vyne ,  Mark R. Hawkins

    Inventor： John F. Wengert ,  Loren R. Jacobs ,  Michael W. Halpin ,  Derrick W. Foster ,  Cornelius A. van der Jeugd ,  Robert M. Vyne ,  Mark R. Hawkins

    IPC: B01J3/00 ,  C23C16/44 ,  C23C16/455 ,  C23C16/46 ,  C23C16/48 ,  H01L21/00 ,  H01L21/205 ,  H01L21/687 ,  C23C16/00

    CPC classification number: B01J3/006 ,  C23C16/44 ,  C23C16/455 ,  C23C16/45502 ,  C23C16/46 ,  C23C16/481 ,  H01L21/67115 ,  H01L21/68735 ,  H01L21/68785

    Abstract: An improved chemical vapor deposition reaction chamber having an internal support plate to enable reduced pressure processing. The chamber has a vertical-lateral lenticular cross-section with a wide horizontal dimension and a shorter vertical dimension between bi-convex upper and lower walls. A central horizontal support plate is provided between two lateral side rails of the chamber. A large rounded rectangular aperture is formed in the support plate for positioning a rotatable susceptor on which a wafer is placed. The shaft of the susceptor extends downward through the aperture and through a lower tube depending from the chamber. The support plate segregates the reaction chamber into an upper region and a lower region, with purge gas being introduced through the lower tube into the lower region to prevent unwanted deposition therein. A temperature compensation ring is provided surrounding the susceptor and supported by fingers connected to the support plate. The temperature compensation ring may be circular or may be built out to conform to the rounded rectangular shape of the support plate aperture. The ring may extend farther downstream from the susceptor than upstream. A separate sacrificial quartz plate may be provided between the circular temperature compensation ring and the rounded rectangular aperture. The quartz plate may have a horizontal portion and a vertical lip in close abutment with the aperture to prevent devitrification of the support plate. A gas injector abuts an inlet flange of the chamber and injects process gas into the upper region and purge gas into the lower region. The gas injector includes a plurality of independently controlled channels disposed laterally across the chamber, the channels merging at an outlet of the injector to allow mixing of the adjacent longitudinal edges of the separate flows well before reaching the wafer.

    Abstract translation: 改进的化学气相沉积反应室具有内部支撑板以实现减压处理。 该腔室具有垂直横向的透镜状横截面，在双凸上壁和下壁之间具有宽的水平尺寸和较短的垂直尺寸。 中央水平支撑板设置在腔室的两个侧向侧轨之间。 在支撑板中形成大的圆形矩形孔，用于定位其上放置晶片的可旋转基座。 基座的轴向下延伸穿过孔，并通过从腔室垂下的下管。 支撑板将反应室分离成上部区域和下部区域，其中吹扫气体通过下部管道被引入下部区域，以防止其中不希望的沉积。 温度补偿环设置在基座周围并由连接到支撑板的手指支撑。 温度补偿环可以是圆形的，或者可以被构造成符合支撑板孔的圆形矩形形状。 环可以比上游更远离基座延伸下游。 可以在环形温度补偿环和圆形矩形孔之间设置单独的牺牲石英板。 石英板可以具有与孔紧密邻接的水平部分和垂直唇缘，以防止支撑板的失透。 气体喷射器邻接室的入口凸缘并将工艺气体注入上部区域并将气体吹入下部区域。 气体喷射器包括跨过室横向设置的多个独立控制的通道，通道在喷射器的出口处汇合，以允许在到达晶片之前将分离的流的相邻纵向边缘混合。

    Wafer support system
    7.
    发明授权
    Wafer support system 有权
    晶圆支撑系统

    公开(公告)号：US07186298B2

    公开(公告)日：2007-03-06

    申请号：US10642799

    申请日：2003-08-18

    Applicant: Michael W. Halpin ,  Mark R. Hawkins ,  Derrick W. Foster ,  Robert M. Vyne ,  John F. Wengert ,  Cornelius A. van der Jeugd ,  Loren R. Jacobs

    Inventor： Michael W. Halpin ,  Mark R. Hawkins ,  Derrick W. Foster ,  Robert M. Vyne ,  John F. Wengert ,  Cornelius A. van der Jeugd ,  Loren R. Jacobs

    IPC: H01L21/00 ,  C23C16/00

    CPC classification number: C23C16/4586 ,  H01L21/68735 ,  H01L21/6875 ,  H01L21/68792 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A wafer support system comprising a segmented susceptor having top and bottom sections and gas flow passages therethrough. A plurality of spacers projecting from a recess formed in the top section of the susceptor support a wafer in spaced relationship with respect to the recess. A sweep gas is introduced to the bottom section of the segmented susceptor and travels through the gas flow passages to exit in at least one circular array of outlets in the recess and underneath the spaced wafer. The sweep gas travels radially outward between the susceptor and wafer to prevent back-side contamination of the wafer. The gas is delivered through a hollow drive shaft and into a multi-armed susceptor support underneath the susceptor. The support arms conduct the sweep gas from the drive shaft to the gas passages in the segmented susceptor. The gas passages are arranged to heat the sweep gas prior to delivery underneath the wafer. Short purge channels may be provided to deliver some of the sweep gas to regions surrounding the spacers to cause a continuous flow of protective purge gas around the spacers. A common bottom section may cooperate with a plurality of different top sections to form segmented susceptors suitable for supporting various sized wafers.

    Abstract translation: 一种晶片支撑系统，其包括具有顶部和底部部分的分段式基座以及穿过其中的气体流动通道。 从形成在基座的顶部的凹部突出的多个间隔件相对于凹部间隔开地支撑晶片。 吹扫气体被引入到分段基座的底部，并且穿过气体流动通道，在凹槽中的至少一个圆形阵列的出口和间隔开的晶片之下排出。 吹扫气体在基座和晶片之间径向向外行进，以防止晶片的背面污染。 气体通过中空驱动轴输送到基座下方的多臂感受器支架中。 支撑臂将吹扫气体从驱动轴传导到分段基座中的气体通道。 气体通道被布置成在散布在晶片之下之前加热吹扫气体。 可以提供短的吹扫通道以将一些吹扫气体输送到围绕间隔物的区域，以引起隔离物周围的保护性吹扫气体的连续流动。 共同的底部部分可以与多个不同的顶部部分配合以形成适合于支撑各种尺寸的晶片的分段式基座。

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