公开(公告)号：US06311016B1

公开(公告)日：2001-10-30

申请号：US09171786

申请日：1999-05-07

Applicant: Syusaku Yanagawa ,  Werner Blersch

Inventor： Syusaku Yanagawa ,  Werner Blersch

IPC: A21B200

CPC classification number: H01L21/67248 ,  G01K1/20 ,  H01L21/67098 ,  H01L21/67115

Abstract: A temperature measuring apparatus, for measuring a temperature of a substrate in a heating apparatus heating a substrate by irradiation of light, and a method for measuring a substrate temperature, the measuring apparatus having a thermocouple and a covering member for covering it. The covering member portion covering the thermocouple is made of a material with a high heat conductivity and its excluding the material with a high heat conductivity portion is made of a material with a high light reflection factor respectively, whereby it is possible to accurately measure the temperature of the substrate heated by irradiation light without the measurement being affected by the heating irradiation light and without contaminating the substrate and further, without depending on film thicknesses structure of the substrate.

Abstract translation: 一种温度测量装置，用于测量通过照射光照射基板的加热装置中的基板的温度，以及用于测量基板温度的方法，所述测量装置具有热电偶和覆盖部件。 覆盖热电偶的覆盖部分由具有高导热性的材料制成，并且除了具有高导热率部分的材料分别由具有高光反射率的材料制成，由此可以精确地测量温度 通过照射光加热的基板，而不会受到加热照射光的影响，并且不会污染基板，而不依赖于基板的膜厚结构。

公开(公告)号：US06343183B1

公开(公告)日：2002-01-29

申请号：US09605094

申请日：2000-06-27

Applicant: Michael W. Halpin ,  Mark R. Hawkins ,  Derrick W. Foster ,  Robert M. Vyne ,  John F. Wengert ,  Cornelius A. van der Jeugd ,  Loren R. Jacobs ,  Frank B. M. Van Bilsen ,  Matthew Goodman ,  Hartmann Glenn ,  Jason M. Layton

Inventor： Michael W. Halpin ,  Mark R. Hawkins ,  Derrick W. Foster ,  Robert M. Vyne ,  John F. Wengert ,  Cornelius A. van der Jeugd ,  Loren R. Jacobs ,  Frank B. M. Van Bilsen ,  Matthew Goodman ,  Hartmann Glenn ,  Jason M. Layton

IPC: A21B200

CPC classification number: C23C16/4586 ,  H01L21/68735 ,  H01L21/6875 ,  H01L21/68792 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A wafer support system comprising a segmented susceptor having top and bottom sections and gas flow passages therethrough. A plurality of spacers projecting from a recess formed in the top section of the susceptor support a wafer in spaced relationship with respect to the recess. A sweep gas is introduced to the bottom section of the segmented susceptor and travels through the gas flow passages to exit in at least one circular array of outlets in the recess and underneath the spaced wafer. The sweep gas travels radially outward between the susceptor and wafer to prevent back-side contamination of the wafer. The gas is delivered through a hollow drive shaft and into a multi-armed susceptor support underneath the susceptor. The support arms conduct the sweep gas from the drive shaft to the gas passages in the segmented susceptor. The gas passages are arranged to heat the sweep gas prior to delivery underneath the wafer. Short purge channels may be provided to deliver some of the sweep gas to regions surrounding the spacers to cause a continuous flow of protective purge gas around the spacers. A common bottom section may cooperate with a plurality of different top sections to form segmented susceptors suitable for supporting various sized wafers.

Abstract translation: 一种晶片支撑系统，其包括具有顶部和底部部分的分段式基座以及穿过其中的气体流动通道。 从形成在基座的顶部的凹部突出的多个间隔件相对于凹部间隔开地支撑晶片。 吹扫气体被引入到分段基座的底部，并且穿过气体流动通道，在凹槽中的至少一个圆形阵列的出口和间隔开的晶片之下排出。 吹扫气体在基座和晶片之间径向向外行进，以防止晶片的背面污染。 气体通过中空驱动轴输送到基座下方的多臂感受器支架中。 支撑臂将吹扫气体从驱动轴传导到分段基座中的气体通道。 气体通道被布置成在散布在晶片之下之前加热吹扫气体。 可以提供短的吹扫通道以将一些吹扫气体输送到围绕间隔物的区域，以引起隔离物周围的保护性吹扫气体的连续流动。 共同的底部部分可以与多个不同的顶部部分配合以形成适合于支撑各种尺寸的晶片的分段式基座。

公开(公告)号：US06226452B1

公开(公告)日：2001-05-01

申请号：US09213883

申请日：1998-12-17

Applicant: Paul Joseph Hundt ,  Katherine Gail Heinen ,  Kwan Yew Kee ,  Ming-Jang Hwang ,  Leslie E. Stark ,  Gonzalo Amador

Inventor： Paul Joseph Hundt ,  Katherine Gail Heinen ,  Kwan Yew Kee ,  Ming-Jang Hwang ,  Leslie E. Stark ,  Gonzalo Amador

IPC: A21B200

CPC classification number: H01L24/83 ,  H01L21/50 ,  H01L21/67115 ,  H01L21/67144 ,  H01L24/29 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29298 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/8319 ,  H01L2224/838 ,  H01L2224/83805 ,  H01L2924/0001 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01054 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/0781 ,  H01L2924/09701 ,  H01L2924/157 ,  H01L2924/16152 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/00 ,  H01L2924/01014 ,  H01L2924/0133 ,  H01L2924/01049 ,  H01L2924/00015 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929

Abstract: In integrated semiconductor manufacturing, semiconductor dies may be packaged in ceramic packages. Such packages typically have a base into which the semiconductor die is securedly placed and typically have a lead frame securedly attached to base so that electrical connection may be made to the semiconductor die. A halagen lamp radiant chamber significantly reduces the time it takes to attach the die and lead frame to the ceramic base while reducing particles commonly associated with open belt converyor furnaces.

Abstract translation: 在集成半导体制造中，半导体管芯可以封装在陶瓷封装中。 这样的封装通常具有基座，半导体管芯被固定地放置在其中，并且通常具有固定地附接到基座的引线框架，使得可以对半导体管芯进行电连接。 卤素灯辐射室显着减少了将模具和引线框架连接到陶瓷基座上所需的时间，同时减少通常与开放式带式熔融炉相关联的颗粒。

公开(公告)号：US06434327B1

公开(公告)日：2002-08-13

申请号：US08508638

申请日：1995-07-28

Applicant: Christian M. Gronet ,  James F. Gibbons

Inventor： Christian M. Gronet ,  James F. Gibbons

IPC: A21B200

CPC classification number: F27D99/0006 ,  C23C16/481 ,  C23C16/482 ,  C30B25/10 ,  C30B25/105 ,  C30B31/12 ,  C30B31/18 ,  F27B17/0025 ,  F27D99/0033 ,  G01J5/0003 ,  G01J5/06 ,  H01L21/67115 ,  H02G3/0425

Abstract: A rapid thermal heating apparatus including a plurality of radiant energy sources and reflectors associated with the radiant energy sources. The radiant energy sources and reflectors direct radiation through a window of an envacuable chamber to radiate regions of a substrate in the chamber with a pattern of radiation intensity.

Abstract translation: 一种快速热加热设备，包括多个辐射能源和与辐射能源相关联的反射器。 辐射能源和反射器将辐射引导通过可以吸收的室的窗口，以辐射强度的图案辐射腔室中的基底的区域。

公开(公告)号：US06222990B1

公开(公告)日：2001-04-24

申请号：US08984652

申请日：1997-12-03

Applicant: Julio Guardado ,  Paul J. Timans

Inventor： Julio Guardado ,  Paul J. Timans

IPC: A21B200

CPC classification number: H01L21/67115 ,  C30B25/10 ,  C30B31/12

Abstract: The present invention is directed to an apparatus and process for heat treating wafers, such as semiconductor wafers, in thermal processing chambers. In particular, the apparatus of the present invention includes an electrical heating element positioned along the edges of a wafer contained in the thermal processing chamber. The electrical heating element which can be made, for instance, from silicon, silicon carbide or graphite, radiates heat towards the edges of the wafer during processing. The heating element is designed to compensate for heat losses that occur at the wafer's edge.

Abstract translation: 本发明涉及一种在热处理室中热处理诸如半导体晶片的晶片的装置和方法。 特别地，本发明的装置包括沿着包含在热处理室中的晶片的边缘定位的电加热元件。 可以由例如硅，碳化硅或石墨制成的电加热元件在加工期间向晶片的边缘辐射热量。 加热元件被设计成补偿在晶片边缘发生的热损失。

公开(公告)号：US06594446B2

公开(公告)日：2003-07-15

申请号：US09729747

申请日：2000-12-04

Applicant: David Malcolm Camm ,  J. Kiefer Elliott

Inventor： David Malcolm Camm ,  J. Kiefer Elliott

IPC: A21B200

CPC classification number: H01L21/324 ,  C30B31/12 ,  F27D19/00 ,  F27D2019/0003 ,  F27D2099/0026 ,  H01L21/268 ,  H01L21/2686 ,  H01L21/67115 ,  Y10S438/928

Abstract: Methods and systems for heat-treating a workpiece are disclosed. A first method involves increasing a temperature of the workpiece over a first time period to an intermediate temperature, and heating a surface of the workpiece to a desired temperature greater than the intermediate temperature, the heating commencing within less time following the first time period than the first time period. A second method involves pre-heating the workpiece from an initial temperature to an intermediate temperature, and heating a surface of the workpiece to a desired temperature greater than the intermediate temperature by an amount less than or equal to about one-fifth of a difference between the intermediate and initial temperatures. A third method involves irradiating a first side of the workpiece to pre-heat the workpiece to an intermediate temperature, and irradiating a second side of the workpiece to heat the second side to a desired temperature greater than the intermediate temperature.

公开(公告)号：US06496648B1

公开(公告)日：2002-12-17

申请号：US09378200

申请日：1999-08-19

Applicant: Brian J. Mack ,  John K. Shriver ,  Charles L. Vaughan

Inventor： Brian J. Mack ,  John K. Shriver ,  Charles L. Vaughan

IPC: A21B200

CPC classification number: H01L21/67115 ,  H05B3/0047 ,  H05B2203/032

Abstract: An apparatus for rapid thermal processing is described and includes a cylindrical lamp array structure (13) surrounding a cylindrical process tube (16). The cylindrical process tube (16) has a lengthwise central axis (22). The cylindrical lamp array structure (13) includes heat sources or lamps (26). The lamps (26) are positioned with respect to the cylindrical process tube (16) so that the sides of the lamps (26) focus light energy in the direction of the lengthwise central axis (22). Substrates (12) are oriented within the cylindrical process tube (16) so that the major surfaces (14) of the substrates (12) are substantially normal to the lengthwise central axis (22). In an alternative embodiment, a magnetic field source (19) is included for processing storage devices such as non-volatile memory devices.

Abstract translation: 描述了用于快速热处理的装置，并且包括围绕圆柱形处理管（16）的圆柱形灯阵列结构（13）。 圆柱形处理管（16）具有纵向中心轴线（22）。 圆柱形灯阵列结构（13）包括热源或灯（26）。 灯（26）相对于圆柱形处理管（16）定位，使得灯（26）的侧面将光能聚焦在纵向中心轴线（22）的方向上。 衬底（12）定向在圆柱形工艺管（16）内，使得衬底（12）的主表面（14）基本上垂直于纵向中心轴线（22）。 在替代实施例中，包括用于处理诸如非易失性存储器件的存储设备的磁场源（19）。

公开(公告)号：US06173116B2

公开(公告)日：2001-01-09

申请号：US09506543

申请日：2000-02-17

Applicant: Freddy Roozeboom ,  Peter A. Duine ,  Paul Van Der Sluis

Inventor： Freddy Roozeboom ,  Peter A. Duine ,  Paul Van Der Sluis

IPC: A21B200

CPC classification number: H01L21/67115 ,  C30B25/105 ,  C30B31/12 ,  G02F2202/34

Abstract: A Method (1) for Rapid Thermal Processing of a wafer (7), wherein the wafer (7) is heated by lamps (9), and the heat radiation is reflected by an optical switching device (15,17) which is in the reflecting state during the heating stage. During the cooling stage of the wafer (7), the heat is absorbed by the switching device (15,17), which is in the heat-absorbing state. The switching device includes a switching film of a trivalent metal, such as gadolinium, which is capable of forming hydrides by an exchange of hydrogen. Dependent on the hydrogen concentration of the hydrides, the film reflects or absorbs heat. The hydrogen content in the switching film can be changed by varying the partial pressure of hydrogen, or, preferably, by varying the potential of the switching film forming part of a stack of layers in an electrochemical cell.

Abstract translation: 一种用于晶片（7）的快速热处理的方法（1），其中所述晶片（7）被灯（9）加热，并且所述热辐射由位于所述晶片（7）中的光学开关器件（15,17）反射 在加热阶段反映状态。 在晶片（7）的冷却阶段期间，热量被处于吸热状态的开关装置（15,17）吸收。 开关装置包括能够通过氢气交换形成氢化物的三价金属如钆的转换膜。 取决于氢化物的氢浓度，膜反射或吸收热量。 可以通过改变氢的分压来改变开关膜中的氢含量，或者优选地，通过改变在电化学电池中形成层叠层的一部分的切换膜的电位来改变开关膜中的氢含量。