公开(公告)号：US09885123B2

公开(公告)日：2018-02-06

申请号：US13049763

申请日：2011-03-16

申请人： Michael W. Halpin

发明人： Michael W. Halpin ,  Paul T. Jacobson

IPC分类号： C30B25/10 ,  C30B25/16 ,  C30B29/06 ,  C23C16/02

CPC分类号： C30B25/16 ,  C23C16/02 ,  C23C16/0209 ,  C30B25/10 ,  C30B29/06

摘要： A system and methods are provided for low temperature, rapid baking to remove impurities from a semiconductor surface prior to in-situ deposition. The system is configured with an upper bank of heat elements perpendicular to the gas flow path, such that when the substrate is heated, the temperature across the substrate can be maintained relatively uniform via zoned heating. Advantageously, a short, low temperature process is suitable for advanced, high density circuits with shallow junctions. Furthermore, throughput is greatly improved by the low temperature bake.

公开(公告)号：US06869485B2

公开(公告)日：2005-03-22

申请号：US10210717

申请日：2002-07-31

申请人： Michael W. Halpin

发明人： Michael W. Halpin

IPC分类号： C23C16/458 ,  C23C16/48 ,  H01L21/00 ,  C23C16/00

CPC分类号： H01L21/67115 ,  C23C16/4584 ,  C23C16/481

摘要： A semiconductor processing chamber, capable of withstanding low pressures while transmitting radiant energy, is provided in a lightweight, compact design. The inner surface of the window is preferably substantially flat and parallel to the wafer to be processed. The window is thin in a center portion and thicker in a surrounding peripheral portion. The thickness increases in the radially outward direction, defined between the flat inner surface and a concave outer surface. Deposition uniformity is improved by employing multiple outlet ports for distributing gas laterally in a short length, enabling a compact, symmetrical geometry. Preferably, a quadra-flow system of gas distribution is used, whereby the chamber contains one inlet port and three outlet ports distributed approximately at 90 degrees around a cylindrical side wall defining the chamber space.

摘要翻译： 提供了一种能够承受低压同时传递辐射能的半导体处理室，其重量轻，紧凑的设计。 窗口的内表面优选地基本上是平坦的并且平行于要处理的晶片。 窗口在中心部分较薄并且在周围周边部分中较厚。 厚度在径向向外的方向上增加，限定在平坦的内表面和凹的外表面之间。 通过采用多个出口端口将气体横向分布在较短的长度上，可实现沉积均匀性，从而实现紧凑的对称几何形状。 优选地，使用气流分配的四流系统，由此腔室包含一个入口端口和围绕限定腔室空间的圆柱形侧壁大约90度分布的三个出口端口。

公开(公告)号：US06608287B2

公开(公告)日：2003-08-19

申请号：US10211776

申请日：2002-08-01

申请人： Michael W. Halpin ,  Derrick W. Foster

发明人： Michael W. Halpin ,  Derrick W. Foster

IPC分类号： F27B514

CPC分类号： B01J3/006 ,  C23C16/44 ,  C23C16/455 ,  C23C16/45502 ,  C23C16/46 ,  C23C16/481 ,  H01L21/67115 ,  H01L21/68735 ,  H01L21/68785

摘要： The chamber has a lenticular cross-section with a horizontal support plate extending between sides of the chamber. A rectangular aperture is formed in the support plate for positioning a rotatable susceptor. A temperature compensation ring surrounds the susceptor and is supported by fingers connected to the support plate. The ring may be circular or may conform to the shape of the support plate aperture. The ring may extend farther downstream from the susceptor than upstream. A sacrificial quartz plate may be provided between the circular ring and the rectangular aperture. The quartz plate may have a horizontal portion and a vertical lip in close abutment with the aperture to prevent devitrification of the support plate. A gas injector abuts an inlet flange of the chamber and injects process gas into an upper region and purge gas into a lower region.

摘要翻译： 腔室具有透镜状横截面，其具有在腔室的两侧之间延伸的水平支撑板。 在支撑板上形成矩形孔，用于定位可转动的基座。 温度补偿环围绕基座并且由连接到支撑板的手指支撑。 环可以是圆形的或者可以符合支撑板孔的形状。 环可以比上游更远离基座延伸下游。 可以在圆环和矩形孔之间设置牺牲石英板。 石英板可以具有与孔紧密邻接的水平部分和垂直唇缘，以防止支撑板的失透。 气体注射器邻接室的入口凸缘并将工艺气体注入上部区域并将气体吹入下部区域。

公开(公告)号：US06572924B1

公开(公告)日：2003-06-03

申请号：US09443552

申请日：1999-11-18

申请人： Michael W. Halpin

发明人： Michael W. Halpin

IPC分类号： C23C1644

CPC分类号： C23C16/4412 ,  C30B25/14

摘要： An improved exhaust conductance system for a CVD reactor includes two exhaust paths and a three-way valve controlling flow to the exhaust paths. The valve directs flow through a first exhaust conductance path when reactant gas passes through the reactor, and through a second exhaust conductance path after reactant gas has been purged from the chamber and only purging gas is flowing through the reactor.

摘要翻译： 用于CVD反应器的改进的排气传导系统包括两个排气路径和三通阀，其控制到排气路径的流动。 当反应物气体通过反应器时，阀门引导流过第一排气导电路径，并且在反应物气体从腔室中被清除并且只有净化气体流过反应器之后通过第二排气导管路径。

公开(公告)号：US06319556B1

公开(公告)日：2001-11-20

申请号：US09437069

申请日：1999-11-09

申请人： Aage Olsen ,  Michael W. Halpin

发明人： Aage Olsen ,  Michael W. Halpin

IPC分类号： B05D304

CPC分类号： G02B5/0215 ,  C23C14/12 ,  C23C14/28 ,  C23C16/481 ,  C30B25/105 ,  C30B31/12 ,  G02B5/0221 ,  G02B5/0268 ,  G02B5/0284

摘要： A reflector plate is provided for scattering radiant heat energy in a semiconductor processing reactor chamber to achieve uniform temperature across a substrate to be processed. The surface is characterized by a plurality of adjoining depressions with substantially no planar sections among the depressions. The width to depth ratio for the depressions averages over 3:1. Crests separating the depressions define an angle of greater than about 60°, thus providing a relatively smooth texture for the reflecting surface. The reflecting surface is thus easy to clean. A method of manufacturing the reflector plate comprises removing material from a planar metal surface by ball-end milling. The depth of each depression and degree of overlap with adjacent depressions can randomly vary within selected ranges. A highly specular finish is then provided on the stippled surface by gold electroplating.

摘要翻译： 提供反射板用于在半导体处理反应器室中散射辐射热能，以实现待处理基板上的均匀温度。 该表面的特征在于在凹陷中基本上没有平坦部分的多个邻接的凹陷。 洼地的宽度与深度比平均值超过3：1。 分离凹陷的波峰形成大于约60°的角度，从而为反射表面提供相对光滑的纹理。 因此，反射表面容易清洁。 制造反射板的方法包括通过球头铣削从平面金属表面去除材料。 每个凹陷的深度和相邻凹陷的重叠程度可以在选定范围内随机变化。 然后通过金电镀在刻面上提供高度镜面的光洁度。

公开(公告)号：US06143079A

公开(公告)日：2000-11-07

申请号：US195793

申请日：1998-11-19

申请人： Michael W. Halpin

发明人： Michael W. Halpin

IPC分类号： C23C16/458 ,  C23C16/48 ,  H01L21/00 ,  C23C16/00

CPC分类号： H01L21/67115 ,  C23C16/4584 ,  C23C16/481

摘要： A semiconductor processing chamber, capable of withstanding low pressures while transmitting radiant energy, is provided in a lightweight, compact design. The inner surface of the window is preferably substantially flat and parallel to the wafer to be processed. The window is thin in a center portion and thicker in a surrounding peripheral portion. The thickness increases in the radially outward direction, defined between the flat inner surface and a concave outer surface. Deposition uniformity is improved by employing multiple outlet ports for distributing gas laterally in a short length, enabling a compact, symmetrical geometry. Preferably, a quadra-flow system of gas distribution is used, whereby the chamber contains one inlet port and three outlet ports distributed approximately at 90 degrees around a cylindrical side wall defining the chamber space.

公开(公告)号：US06093252A

公开(公告)日：2000-07-25

申请号：US637616

申请日：1996-04-25

申请人： John F. Wengert ,  Loren R. Jacobs ,  Michael W. Halpin ,  Derrick W. Foster ,  Cornelius A. van der Jeugd ,  Robert M. Vyne ,  Mark R. Hawkins

发明人： John F. Wengert ,  Loren R. Jacobs ,  Michael W. Halpin ,  Derrick W. Foster ,  Cornelius A. van der Jeugd ,  Robert M. Vyne ,  Mark R. Hawkins

IPC分类号： B01J3/00 ,  C23C16/44 ,  C23C16/455 ,  C23C16/46 ,  C23C16/48 ,  H01L21/00 ,  H01L21/205 ,  H01L21/687 ,  C23C16/00

CPC分类号： B01J3/006 ,  C23C16/44 ,  C23C16/455 ,  C23C16/45502 ,  C23C16/46 ,  C23C16/481 ,  H01L21/67115 ,  H01L21/68735 ,  H01L21/68785

摘要： An improved chemical vapor deposition reaction chamber having an internal support plate to enable reduced pressure processing. The chamber has a vertical-lateral lenticular cross-section with a wide horizontal dimension and a shorter vertical dimension between bi-convex upper and lower walls. A central horizontal support plate is provided between two lateral side rails of the chamber. A large rounded rectangular aperture is formed in the support plate for positioning a rotatable susceptor on which a wafer is placed. The shaft of the susceptor extends downward through the aperture and through a lower tube depending from the chamber. The support plate segregates the reaction chamber into an upper region and a lower region, with purge gas being introduced through the lower tube into the lower region to prevent unwanted deposition therein. A temperature compensation ring is provided surrounding the susceptor and supported by fingers connected to the support plate. The temperature compensation ring may be circular or may be built out to conform to the rounded rectangular shape of the support plate aperture. The ring may extend farther downstream from the susceptor than upstream. A separate sacrificial quartz plate may be provided between the circular temperature compensation ring and the rounded rectangular aperture. The quartz plate may have a horizontal portion and a vertical lip in close abutment with the aperture to prevent devitrification of the support plate. A gas injector abuts an inlet flange of the chamber and injects process gas into the upper region and purge gas into the lower region. The gas injector includes a plurality of independently controlled channels disposed laterally across the chamber, the channels merging at an outlet of the injector to allow mixing of the adjacent longitudinal edges of the separate flows well before reaching the wafer.

摘要翻译： 改进的化学气相沉积反应室具有内部支撑板以实现减压处理。 该腔室具有垂直横向的透镜状横截面，在双凸上壁和下壁之间具有宽的水平尺寸和较短的垂直尺寸。 中央水平支撑板设置在腔室的两个侧向侧轨之间。 在支撑板中形成大的圆形矩形孔，用于定位其上放置晶片的可旋转基座。 基座的轴向下延伸穿过孔，并通过从腔室垂下的下管。 支撑板将反应室分离成上部区域和下部区域，其中吹扫气体通过下部管道被引入下部区域，以防止其中不希望的沉积。 温度补偿环设置在基座周围并由连接到支撑板的手指支撑。 温度补偿环可以是圆形的，或者可以被构造成符合支撑板孔的圆形矩形形状。 环可以比上游更远离基座延伸下游。 可以在环形温度补偿环和圆形矩形孔之间设置单独的牺牲石英板。 石英板可以具有与孔紧密邻接的水平部分和垂直唇缘，以防止支撑板的失透。 气体喷射器邻接室的入口凸缘并将工艺气体注入上部区域并将气体吹入下部区域。 气体喷射器包括跨过室横向设置的多个独立控制的通道，通道在喷射器的出口处汇合，以允许在到达晶片之前将分离的流的相邻纵向边缘混合。

公开(公告)号：US07655093B2

公开(公告)日：2010-02-02

申请号：US11668409

申请日：2007-01-29

申请人： Michael W. Halpin ,  Mark R. Hawkins ,  Derrick W. Foster ,  Robert M. Vyne ,  John F. Wengert ,  Cornelius A. van der Jeugd ,  Loren R. Jacobs ,  Frank B. M. Van Bilsen ,  Matthew Goodman ,  Hartmann Glenn ,  Jason M. Layton

发明人： Michael W. Halpin ,  Mark R. Hawkins ,  Derrick W. Foster ,  Robert M. Vyne ,  John F. Wengert ,  Cornelius A. van der Jeugd ,  Loren R. Jacobs ,  Frank B. M. Van Bilsen ,  Matthew Goodman ,  Hartmann Glenn ,  Jason M. Layton

IPC分类号： H01L21/00 ,  C23C14/00 ,  C23C16/00

CPC分类号： C23C16/4586 ,  H01L21/68735 ,  H01L21/6875 ,  H01L21/68792 ,  H01L2924/0002 ,  H01L2924/00

摘要： A wafer support system comprising a susceptor having top and bottom sections and gas flow passages therethrough. One or more spacers projecting from a recess formed in the top section of the susceptor support a wafer in spaced relationship with respect to the recess. A sweep gas is introduced to the bottom section of the susceptor and travels through the gas flow passages to exit in at least one circular array of outlets in the recess and underneath the spaced wafer. The sweep gas travels radially outward between the susceptor and wafer to prevent back-side contamination of the wafer. The gas is delivered through a hollow drive shaft and into a multi-armed susceptor support underneath the susceptor. The support arms conduct the sweep gas from the drive shaft to the gas passages in the susceptor. The gas passages are arranged to heat the sweep gas prior to delivery underneath the wafer. Short purge channels may be provided to deliver some of the sweep gas to regions surrounding the spacers to cause a continuous flow of protective purge gas around the spacers.

摘要翻译： 一种晶片支撑系统，其包括具有顶部和底部部分以及穿过其的气体流动通道的基座。 从形成在基座的顶部的凹部突出的一个或多个间隔件相对于凹部以间隔的关系支撑晶片。 吹扫气体被引入到基座的底部，并且穿过气体流动通道，以在凹槽中的至少一个圆形阵列的出口和在间隔开的晶片之下排出。 吹扫气体在基座和晶片之间径向向外行进，以防止晶片的背面污染。 气体通过中空驱动轴输送到基座下方的多臂感受器支架中。 支撑臂将吹扫气体从驱动轴传导到基座中的气体通道。 气体通道被布置成在散布在晶片之下之前加热吹扫气体。 可以提供短的吹扫通道以将一些吹扫气体输送到围绕间隔物的区域，以引起隔离物周围的保护性吹扫气体的连续流动。

公开(公告)号：US06976586B2

公开(公告)日：2005-12-20

申请号：US10144158

申请日：2002-05-10

申请人： Michael W. Halpin

发明人： Michael W. Halpin

IPC分类号： B65D81/07 ,  B65D81/02

CPC分类号： B65D81/07

摘要： The packaging system comprises a first plurality of interlaced fingers disposed in the upper portion of a box, and a second plurality of interlaced fingers disposed in a lower portion. The fingers provide provide a soft support for a product placed between the fingers.

摘要翻译： 包装系统包括设置在盒的上部的第一多个交错指状物和设置在下部的第二多个交错指状物。 手指提供为放置在手指之间的产品提供软支撑。

公开(公告)号：US06464792B1

公开(公告)日：2002-10-15

申请号：US09613437

申请日：2000-07-11

申请人： John F. Wengert ,  Loren R. Jacobs ,  Michael W. Halpin ,  Derrick W. Foster ,  Cornelius A. van der Jeugd ,  Robert M. Vyne ,  Mark R. Hawkins

发明人： John F. Wengert ,  Loren R. Jacobs ,  Michael W. Halpin ,  Derrick W. Foster ,  Cornelius A. van der Jeugd ,  Robert M. Vyne ,  Mark R. Hawkins

IPC分类号： C23C1600

CPC分类号： B01J3/006 ,  C23C16/44 ,  C23C16/455 ,  C23C16/45502 ,  C23C16/46 ,  C23C16/481 ,  H01L21/67115 ,  H01L21/68735 ,  H01L21/68785

摘要： An improved chemical vapor deposition reaction chamber having an internal support plate to enable reduced pressure processing. The chamber has a vertical-lateral lenticular cross-section with a wide horizontal dimension and a shorter vertical dimension between bi-convex upper and lower walls. A central horizontal support plate is provided between two lateral side rails of the chamber. A large rounded rectangular aperture is formed in the support plate for positioning a rotatable susceptor on which a wafer is placed. The shaft of the susceptor extends downward through the aperture and through a lower tube depending from the chamber. The support plate segregates the reaction chamber into an upper region and a lower region, with purge gas being introduced through the lower tube into the lower region to prevent unwanted deposition therein. A temperature compensation ring is provided surrounding the susceptor and supported by fingers connected to the support plate. The temperature compensation ring may be circular or may be built out to conform to the rounded rectangular shape of the support plate aperture. The ring may extend farther downstream from the susceptor than upstream. A separate sacrificial quartz plate may be provided between the circular temperature compensation ring and the rounded rectangular aperture. The quartz plate may have a horizontal portion and a vertical lip in close abutment with the aperture to prevent devitrification of the support plate. A gas injector abuts an inlet flange of the chamber and injects process gas into the upper region and purge gas into the lower region. The gas injector includes a plurality of independently controlled channels disposed laterally across the chamber, the channels merging at an outlet of the injector to allow mixing of the adjacent longitudinal edges of the separate flows well before reaching the wafer.

摘要翻译： 改进的化学气相沉积反应室具有内部支撑板以实现减压处理。 该腔室具有垂直横向的透镜状横截面，在双凸上壁和下壁之间具有宽的水平尺寸和较短的垂直尺寸。 中央水平支撑板设置在腔室的两个侧向侧轨之间。 在支撑板中形成大的圆形矩形孔，用于定位其上放置晶片的可旋转基座。 基座的轴向下延伸穿过孔，并通过从腔室垂下的下管。 支撑板将反应室分离成上部区域和下部区域，其中吹扫气体通过下部管道被引入下部区域，以防止其中不希望的沉积。 温度补偿环设置在基座周围并由连接到支撑板的手指支撑。 温度补偿环可以是圆形的，或者可以被构造成符合支撑板孔的圆形矩形形状。 环可以比上游更远离基座延伸下游。 可以在环形温度补偿环和圆形矩形孔之间设置单独的牺牲石英板。 石英板可以具有与孔紧密邻接的水平部分和垂直唇缘，以防止支撑板的失透。 气体喷射器邻接室的入口凸缘并将工艺气体注入上部区域并将气体吹入下部区域。 气体喷射器包括跨过室横向设置的多个独立控制的通道，通道在喷射器的出口处汇合，以允许在到达晶片之前将分离的流的相邻纵向边缘混合。