公开(公告)号：US06759633B2

公开(公告)日：2004-07-06

申请号：US10258797

申请日：2002-10-28

Applicant: Masato Kubodera ,  Masaki Sohma ,  Katsumi Sekiguchi ,  Shigeru Kasai

Inventor： Masato Kubodera ,  Masaki Sohma ,  Katsumi Sekiguchi ,  Shigeru Kasai

IPC: F27B514

CPC classification number: C23C16/46 ,  C23C16/4411 ,  H01L21/67109

Abstract: A heat treatment system for controlling the temperature in a processing vessel. The system includes a cylindrical processing vessel; a supporting table, raised by a support from the bottom portion of the processing vessel, for mounting thereon an object to be processed; and a processing object heating part provided in the supporting table, for heating the object to be processed. In addition a thermoelectric conversion element capable of selectively heating or cooling is provided in the bottom portion of the processing vessel, a resistive heater is provided in the side wall of the processing vessel, and a temperature control part for controlling the operations of the thermoelectric conversion element and the resistive heater is provided. Thus, it is not only possible to appropriately control the temperature in the processing vessel, but it is also possible to reduce space and energy, by combining the resistive heater with a thermoelectric conversion element.

Abstract translation: 一种用于控制处理容器中的温度的热处理系统。 该系统包括圆柱形处理容器; 支撑台，由处理容器的底部的支撑件升起，用于在其上安装待加工物体; 以及设置在支撑台中的加工对象加热部，用于加热被加工物。 此外，在处理容器的底部设置能够选择性地加热或冷却的热电转换元件，在处理容器的侧壁中设置电阻加热器，以及用于控制热电转换操作的温度控制部 元件和电阻加热器。 因此，不仅可以适当地控制处理容器中的温度，而且还可以通过组合电阻加热器和热电转换元件来减小空间和能量。

公开(公告)号：US06632087B1

公开(公告)日：2003-10-14

申请号：US10149025

申请日：2002-06-06

Applicant: Alberto Armellin ,  Matteo Zoppas

Inventor： Alberto Armellin ,  Matteo Zoppas

IPC: F27B514

CPC classification number: B29C49/68 ,  B29C49/06 ,  B29C2035/0822 ,  H05B3/0057 ,  H05B2203/032

Abstract: Infrared oven for heating a plurality of preforms and comprising: a conduit through which said preforms move, a flow of outside air that flows through said conduit from an intake mouth to an exhaust mouth under the action of a blower, a plurality of infrared lamps irradiating the preforms in said conduit, in which a reflective surface is arranged downstream of said lamps and is provided with apertures through which the flow of outside air passes prevailingly. The axis of the preforms is oriented in a manner that is substantially perpendicular to the direction of flow of said outside air. The infrared lamps are arranged substantially downstream of the preforms, and are separated from each other by appropriate intervals through which said flow of outside air passes, in which said flow of outside air first passes through said intervals separating said preforms and then through said intervals provided between said infrared lamps. A reflective grid, provided with apertures for the flow of outside air to partially pass therethrough, is arranged upstream of said preforms.

Abstract translation: 红外线烘箱，其用于加热多个预成型件，包括：在所述预成型件移动的导管，在鼓风机的作用下通过所述导管从进气口流到排气口的外部空气流;多个红外线灯 所述管道中的预成型件，其中反射表面布置在所述灯的下游，并且设置有孔，外部空气流通过所述孔径。 预成型件的轴线以基本上垂直于所述外部空气的流动方向的方式定向。 红外灯基本上在预成型件的下游布置，并且通过外部空气流通过的适当间隔彼此分开，其中所述外部空气流首先通过分隔所述预成型件的所述间隔，然后通过所述间隔提供 在所述红外灯之间。 设置有用于使外部空气流部分通过的孔的反射栅格布置在所述预成型件的上游。

公开(公告)号：US06566630B2

公开(公告)日：2003-05-20

申请号：US10157190

申请日：2002-05-30

Applicant: Masayuki Kitamura

Inventor： Masayuki Kitamura

IPC: F27B514

CPC classification number: H01L21/67115 ,  H01L21/67109

Abstract: A thermal processing apparatus capable of rapidly increasing and decreasing a temperature of a target object in a process chamber being thermally treated. A heat source heats the target object and a cooling arrangement including a bottom part of the process chamber cools the object. A gas having high thermal conductivity is introduced into the chamber to promote heat transfer. A moving mechanism relatively moves the object with respect to the cooling arrangement.

Abstract translation: 一种热处理装置，其能够快速地增加和降低在热处理的处理室中的目标物体的温度。 热源加热目标物体，并且包括处理室的底部的冷却装置冷却物体。 将具有高导热性的气体引入室中以促进热传递。 移动机构相对于冷却装置相对地移动物体。

公开(公告)号：US06528767B2

公开(公告)日：2003-03-04

申请号：US09963020

申请日：2001-09-24

Applicant: William A. Bagley ,  Ericka M. Ramirez ,  Stephen C. Wolgast

Inventor： William A. Bagley ,  Ericka M. Ramirez ,  Stephen C. Wolgast

IPC: F27B514

CPC classification number: H01L21/6875 ,  C03C17/002 ,  C23C16/4581 ,  C23C16/4583 ,  H01L21/68778

Abstract: An apparatus for supporting a glass substrate is provided. In one embodiment, a substrate support is provided having a base structural member and an upper top portion having a surface thereon adapted to minimize friction and/or chemical reactions between the substrate support and a glass substrate supported thereon. The substrate supports may be utilized in various chambers such as load locks chamber and chambers having thermal processes.

Abstract translation: 提供一种用于支撑玻璃基板的装置。 在一个实施例中，提供了具有基部结构构件和其上表面的上顶部的衬底支撑件，其适于最小化衬底支撑件和支撑在其上的玻璃衬底之间的摩擦和/或化学反应。 衬底支撑件可用于各种室，例如负载锁定室和具有热过程的室。

公开(公告)号：US06465761B2

公开(公告)日：2002-10-15

申请号：US09911212

申请日：2001-07-23

Applicant: Ronald R. Stevens ,  Eric Shero ,  Ravinder K. Aggarwal ,  Michael W. Halpin

Inventor： Ronald R. Stevens ,  Eric Shero ,  Ravinder K. Aggarwal ,  Michael W. Halpin

IPC: F27B514

CPC classification number: C23C16/481

Abstract: A reactor chamber is positioned between a top array of heat lamps and a bottom array of heat lamps. At least one of the heat lamps forming the top and bottom arrays features a segmented filament such that power output along the length of the heat lamp differs. In one configuration, the heat lamp has a pair of high energy output regions spaced from each other by a lower energy output region. In some configurations, at least one of the heat lamps forming the top and bottom arrays is non-linear, such as U-shaped. In further configurations, a non-linear heat lamp has a segmented filament with segments or areas of different winding density.

公开(公告)号：US06448536B2

公开(公告)日：2002-09-10

申请号：US09824018

申请日：2001-04-03

Applicant: Yicheng Li ,  Toshio Takagi

Inventor： Yicheng Li ,  Toshio Takagi

IPC: F27B514

CPC classification number: H01L21/67115 ,  H01L21/67103

Abstract: A single-substrate-heat-processing apparatus includes an airtight process chamber, the interior of which is partitioned into a process space and a lower space by a mount plate and a shield frame. Heating lamps are disposed at a position outside the process chamber and below the mount plate. The mount plate is supported by a shield frame via an isolator, which has a thermal conductivity lower than that of the mount plate. The isolator is formed of a lower member and an upper member. The upper member has outer and inner cover portions, which cover the inner edge of the shield frame and the outer edge of the mount plate, respectively, in a non-contacting state.

Abstract translation: 单基板加热装置包括气密处理室，其内部通过安装板和屏蔽框架分隔成处理空间和下部空间。 加热灯设置在处理室外部和安装板下方的位置。 安装板通过隔离器由屏蔽框架支撑，隔离器的导热率低于安装板的导热系数。 隔离器由下部构件和上部构件形成。 上部构件具有分别在非接触状态下覆盖屏蔽框架的内边缘和安装板的外边缘的外部和内部盖部分。

公开(公告)号：US06444940B1

公开(公告)日：2002-09-03

申请号：US09890328

申请日：2001-07-30

Applicant: Takanori Saito ,  Hisaei Osanai ,  Toshiyuki Makiya

Inventor： Takanori Saito ,  Hisaei Osanai ,  Toshiyuki Makiya

IPC: F27B514

CPC classification number: H01L21/67109 ,  C23C16/46

Abstract: The heat treatment apparatus has the reaction vessel and the holding tool contained in the reaction vessel for holding a plurality of objects to be processed. The lower end of the reaction vessel is closed by the cover and the insulating unit is installed between the cover and the holding tool. On the top of the insulating unit, the heating unit having a heating resistor composed of a carbon material of high-purity sealed in a quartz plate is installed. Heat insulators are installed under the heating unit. The insulating unit is fixed to the cover, and the revolving shaft for rotating the holding tool passes in the center of the insulating unit, and the electric feeding line member for feeding electric power to the heating unit is arranged outside of the insulating unit.

Abstract translation: 热处理装置具有容纳在反应容器中的用于保持多个待处理物体的反应容器和保持工具。 反应容器的下端由盖封闭，绝缘单元安装在盖和保持工具之间。 在绝缘单元的顶部，安装具有由密封在石英板中的高纯度碳材料构成的加热电阻器的加热单元。 热绝缘子安装在加热单元下。 绝缘单元固定在盖上，用于旋转保持工具的旋转轴穿过绝缘单元的中心，并且用于将电力馈送到加热单元的馈电线构件设置在绝缘单元的外部。

公开(公告)号：US06380518B2

公开(公告)日：2002-04-30

申请号：US09921139

申请日：2001-08-03

Applicant: Eiichi Shirakawa ,  Nobuyuki Sata

Inventor： Eiichi Shirakawa ,  Nobuyuki Sata

IPC: F27B514

CPC classification number: H01L21/67109 ,  G03F7/168 ,  G03F7/40

Abstract: The heat treatment apparatus of the present invention comprises a chamber, a hot plate for supporting and heating a substrate in a chamber, a gas supply mechanism having a single or a plurality of gas blow-out ports and arranged in an upper space above the hot plate in the chamber, for supplying a gas along the substrate so as to cover the substrate placed on the hot plate, and an exhaust mechanism having a single or a plurality of gas converge/exhaust ports which face the gas blow-out ports with the hot plate interposed therebetween, for converging and exhausting the gas blown out from the gas blow-out ports, from the chamber, the gas converge/exhaust ports having an effective exhaustion opening length L2 which is shorter than an effective blow-out opening length L1.

Abstract translation: 本发明的热处理装置包括：室，用于支撑和加热室中的基板的加热板，具有单个或多个气体吹出口的气体供给机构，并且布置在热的上方的上部空间中 用于沿着基板供应气体以覆盖放置在热板上的基板;以及排气机构，其具有与气体吹出口面对的单个或多个气体会聚/排出口， 插入其间的热板，用于使从气体吹出口吹出的气体从腔室会聚并排出，具有比有效吹出开口长度L1短的有效耗尽开口长度L2的气体会聚排气口 。

公开(公告)号：US06369361B2

公开(公告)日：2002-04-09

申请号：US09769499

申请日：2001-01-26

Applicant: Takanori Saito ,  Tsuyoshi Takizawa ,  Kenichi Yamaga

Inventor： Takanori Saito ,  Tsuyoshi Takizawa ,  Kenichi Yamaga

IPC: F27B514

CPC classification number: F27D11/02 ,  C30B31/12 ,  H05B3/62

Abstract: A thermal processing apparatus includes a reaction vessel into which an object to be processed is conveyed, a furnace body disposed so as to surround the reaction vessel, and a heater disposed in a region surrounding the reaction vessel in the furnace body. The heater includes heating elements, each having a sealing member made of a ceramic material and a linear flexible resistance heat generating member sealed by the sealing member.

Abstract translation: 热处理装置包括：被处理物被输送到其中的反应容器，设置成包围反应容器的炉体;以及设置在炉体内的反应容器周围的区域的加热器。 加热器包括加热元件，每个加热元件具有由陶瓷材料制成的密封元件和由密封元件密封的线性柔性电阻发热元件。

公开(公告)号：US06344631B1

公开(公告)日：2002-02-05

申请号：US09854990

申请日：2001-05-11

Applicant: Juan M. Chacin

Inventor： Juan M. Chacin

IPC: F27B514

CPC classification number: H01L21/67115 ,  C23C16/4585 ,  C23C16/481 ,  C30B25/10 ,  C30B25/12

Abstract: A substrate processing assembly includes an edge support and a heat distributing plate to absorb and transfer heat energy via radiation from a radiant heat source to a substrate on the edge support. The edge support defines a substrate support location to support a substrate at an edge of the substrate during processing. The assembly further includes a first heat distributing plate positioned generally parallel to the edge support. A plurality of edge support holding arms is coupled to the edge support. The plurality of edge support holding arms is also coupled to the first heat distributing plate to hold the first heat distributing plate spaced apart from the edge support. In another embodiment, the assembly can include a second heat distributing plate spaced apart from the edge support. In yet another embodiment, the substrate processing assembly can be used in a substrate processing apparatus that includes a chamber within which the assembly is located and a radiant heat source to provide radiant heat to the chamber. The structure of the processing assembly provides substrate processing assembly components that have a low thermal mass such that the temperature of the chamber can be quickly ramped up to operating temperature, thus significantly decreasing the time to process a substrate such as a semiconductor wafer.

Abstract translation: 基板处理组件包括边缘支撑件和散热板，以通过辐射从辐射热源吸收和转移热能到边缘支撑件上的基板。 边缘支撑件限定衬底支撑位置以在处理期间在衬底的边缘处支撑衬底。 组件还包括大致平行于边缘支撑件定位的第一散热板。 多个边缘支撑保持臂联接到边缘支撑件。 多个边缘支撑保持臂还联接到第一散热板以保持与边缘支撑件间隔开的第一散热板。 在另一个实施例中，组件可以包括与边缘支撑件间隔开的第二散热板。 在另一个实施例中，衬底处理组件可以用在衬底处理设备中，衬底处理设备包括组件所在的室和辐射热源，以向腔室提供辐射热。 处理组件的结构提供了具有低热质量的基底处理组件部件，使得腔室的温度可以快速地升高到工作温度，从而显着减少了处理诸如半导体晶片的衬底的时间。