Abstract:
A temperature measuring device having a smart chip, or electronic circuit, integrated therein is provided. The smart chip, or electronic circuit, includes at least a unique identification number or data specific to the particular temperature measuring device stored thereon. The electronic circuit further includes calibration data of the temperature measuring device stored thereon. A module controller of a temperature control system is configured to verify the unique identification number of the thermocouple assembly prior to allowing data to be transferred between the temperature measuring device and a temperature controller. A graphical user interface allows an operator to enter the unique identification number or data to verify the temperature measuring device and display an error message if the number or data entered is not equivalent, or does not match, the unique identification number or data stored on the electronic circuit.
Abstract:
An improved thermocouple assembly for providing a temperature measurement is provided. The thermocouple assembly includes a sheath having a measuring tip, a support member received within the sheath, and first and second wires disposed within the support member. An end of each of the first and second wires are fused together to form a thermocouple junction therebetween. A recessed region is formed in a distal end of the support member, and the thermocouple junction is fixedly located at the base of the recessed region such that the recessed region maintains the thermocouple junction in a substantially fixed position relative to the measuring tip of the sheath.
Abstract:
Each of a plurality of individually heated circularly located susceptors supports and heats one of a plurality of wafers within a processing chamber. An overhead gas dispersion head, vertically aligned with each susceptor, directs, in combination with downstream flow control structure, flow of a reactant gas radially uniformly across the supported wafer. A spider sequentially relocates each of the wafers, as a group, to an adjacent susceptor. Wafer handling apparatus replaces each processed wafer to provide a high production rate throughput. A source of RF energy radiating essentially primarily between each gas dispersion head and its associated susceptor provides a plasma enhanced environment and the low level intensity elsewhere within the reactor reduces residual deposits.
Abstract:
An improved thermocouple assembly for providing a temperature measurement is provided. The thermocouple assembly includes a sheath having a measuring tip, a support member received within the sheath, and first and second wires disposed within the support member. An end of each of the first and second wires are fused together to form a thermocouple junction therebetween. A recessed region is formed in a distal end of the support member, and the thermocouple junction is fixedly located at the base of the recessed region such that the recessed region maintains the thermocouple junction in a substantially fixed position relative to the measuring tip of the sheath.
Abstract:
A thermocouple having at least one inner alignment feature or at least one outer alignment feature, or a combination thereof for positively positioning and aligning at least one thermocouple junction within a bore formed in a susceptor ring of a semiconductor substrate processing reactor. The outer alignment feature is configured to positively align the junction(s) longitudinally within the bore. The inner alignment feature configured to positively position the junction(s) rotationally within the sheath of the thermocouple relative to the bore.
Abstract:
An integrated wafer transport and transfer device is disclosed, which includes a vehicle with an integrated docking platform for holding a wafer carrier such as a FOUP (front opening unified pod). The docking platform is positioned at the correct height for sealing the FOUP to the load lock of a process tool. Vertical and/or horizontal movement is required in some cases. Methods for delivering wafers to process tools are also described. In a preferred embodiment, wafers are carried inside a FOUP on a cart, such as an automatically guided vehicle or a personally guided vehicle. The cart is docked at a process tool and the FOUP is sealed to the load lock of the tool without removing the FOUP from the cart. After processing on one tool, the cart along with the FOUP can be moved to the next process tool for further processing. The FOUP can stay on the same cart until all processing is completed. This is especially useful for moving priority lots through the fabrication facility quickly.
Abstract:
A wafer holder for supporting a wafer within a CVD processing chamber includes a vertically moveable lift ring configured to support the bottom peripheral surface of the wafer, and an inner plug having a top flat surface configured to support the wafer during wafer processing. The lift ring has a central aperture configured to closely surround the inner plug. When a wafer is to be loaded onto the wafer holder, the lift ring is elevated above the inner plug. The wafer is loaded onto the lift ring in the elevated position. Then, the lift ring is maintained in the elevated position for a time period sufficient to allow the wafer temperature to rise to a level that is sufficient to significantly reduce or even substantially prevent thermal shock to the wafer when the wafer is brought into contact with the inner plug. The lift ring is then lowered into surrounding engagement with the inner plug. This is the wafer processing position of the wafer holder.
Abstract:
Each of a plurality of individually heated circularly located susceptors supports and heats one of a plurality of wafers within a processing chamber. An overhead gas dispersion head, vertically aligned with each susceptor, directs, in combination with downstream flow control structure, flow of a reactant gas radially uniformly across the supported wafer. A spider sequentially relocates each of the wafers, as a group, to an adjacent susceptor. Wafer handling apparatus replaces each processed wafer to provide a high production rate throughput. A source of RF energy radiating essentially primarily between each gas dispersion head and its associated susceptor provides a plasma enhanced environment and the low level intensity elsewhere within the reactor reduces residual deposits.
Abstract:
A temperature measuring device having a smart chip, or electronic circuit, integrated therein is provided. The smart chip, or electronic circuit, includes at least a unique identification number or data specific to the particular temperature measuring device stored thereon. The electronic circuit further includes calibration data of the temperature measuring device stored thereon. A module controller of a temperature control system is configured to verify the unique identification number of the thermocouple assembly prior to allowing data to be transferred between the temperature measuring device and a temperature controller. A graphical user interface allows an operator to enter the unique identification number or data to verify the temperature measuring device and display an error message if the number or data entered is not equivalent, or does not match, the unique identification number or data stored on the electronic circuit.
Abstract:
A wafer holder for supporting a wafer within a CVD processing chamber includes a vertically moveable lift ring configured to support the bottom peripheral surface of the wafer, and an inner plug having a top flat surface configured to support the wafer during wafer processing. The lift ring has a central aperture configured to closely surround the inner plug. When a wafer is to be loaded onto the wafer holder, the lift ring is elevated above the inner plug. The wafer is loaded onto the lift ring in the elevated position. Then, the lift ring is maintained in the elevated position for a time period sufficient to allow the wafer temperature to rise to a level that is sufficient to significantly reduce or even substantially prevent thermal shock to the wafer when the wafer is brought into contact with the inner plug. The lift ring is then lowered into surrounding engagement with the inner plug. This is the wafer processing position of the wafer holder.