Abstract:
A memory system comprises an encoding processing circuit 100 that performs redundant encoding process on target data Din to be written to thereby generate data RDin such that the number of bits having a predetermined value is half or less than the total number of bits, and a memory 120 to which the data RDin generated by the encoding processing circuit are written.
Abstract:
A memory system comprises an encoding processing circuit 100 that performs redundant encoding process on target data Din to be written to thereby generate data RDin such that the number of bits having a predetermined value is half or less than the total number of bits, and a memory 120 to which the data RDin generated by the encoding processing circuit are written.
Abstract:
In one embodiment, a memory system for writing redundant data output by an encoding processing circuit, comprises a memory, a encoding processing circuit, and a decoding circuit. The memory is electrically rewritable by using memory cells. The memory cells are capable of having two different resistance values corresponding to logical values of 1 or 0 respectively. The redundant data is read from and a predetermined logical value is written to the memory by flowing current in a same direction. The encoding processing circuit performs redundant encoding processing on target data and outputs redundant data. A number of bits having the predetermined logical value exceeds a number of bits having the logical value other than the predetermined logical value, for writing the redundant data to the memory. A decoding circuit reads data from the memory, and performs a decoding process on the data.
Abstract:
According to one embodiment, a memory device comprises a writing device that writes data bits, check bits for error corrections, and overhead bit(s) into a memory, each bit of the overhead bit(s) corresponding to each group of bit group(s) including at least one bit of the data bits and/or the check bits, each bit of the overhead bit(s) indicating whether the corresponding bit group has been inverted, a reading unit that reads the data bits, the check bits, and the overhead bit(s) from the memory, a correcting unit that corrects an error in the data bits and overhead bit(s) read from the memory, based on the check bits, and an inverting unit that inverts the data bits contained in the bit group corresponding to the overhead bit and outputs the inverted data bits as data read from the memory when the error-corrected overhead bit indicates that inversion has been performed.
Abstract:
According to one embodiment, a memory device comprises a writing device that writes data bits, check bits for error corrections, and overhead bit(s) into a memory, each bit of the overhead bit(s) corresponding to each group of bit group(s) including at least one bit of the data bits and/or the check bits, each bit of the overhead bit(s) indicating whether the corresponding bit group has been inverted, a reading unit that reads the data bits, the check bits, and the overhead bit(s) from the memory, a correcting unit that corrects an error in the data bits and overhead bit(s) read from the memory, based on the check bits, and an inverting unit that inverts the data bits contained in the bit group corresponding to the overhead bit and outputs the inverted data bits as data read from the memory when the error-corrected overhead bit indicates that inversion has been performed.
Abstract:
According to one embodiment, a computer system comprises a first memory that stores a first program, a second memory that stores a second program or data, a processor, a first and a second power control circuits. The first power control circuit causes the first memory to operate at a first power consumption when detecting change of an input signal to the processor, and causes the first memory to operate at a second power consumption smaller than the first power consumption and transmits a temporary halt instruction to the processor when the execution of the first program or the second program by the processor is completed. The second power control circuit causes the second memory to operate at a third power consumption before the processor executes the second program, reads or writes the data.The second memory accepts read and write operations while operating at the third power consumption.
Abstract:
A virtual memory management apparatus of an embodiment is embedded in a computing machine 80 and is provided with an application program 21, an operating system 22, a volatile memory 11, and a nonvolatile memory 12. The volatile memory 11 is provided with a plurality of clean pages. The nonvolatile memory 12 is provided with a plurality of dirty pages and a page table memory unit 51. The operating system 22 is provided with a virtual memory management unit 23 which includes a page transfer unit 25.
Abstract:
According to an aspect of embodiments, there is provided a random number generating circuit including at least one magnetic tunnel junction (MTJ) element and a control circuit. The MTJ element comes into a high resistance state corresponding to a first logical value and also comes into a low resistance state corresponding to a second logical value different from the first logical value. The control circuit supplies the MTJ element with a first current for stochastically reversing the MTJ element from the high resistance state to the low resistance state when the MTJ element is in the high resistance state, and supplies the MTJ element with a second current for stochastically reversing the MTJ element from the low resistance state to the high resistance state when the MTJ element is in the low resistance state.
Abstract:
According to one embodiment, a storage apparatus includes: a first inverter; a second inverter; a first storage element having a first state and a second state; and a second storage element having a third state and a fourth state, wherein the first storage element is brought into the first state when a current flows from the first storage element to the first storage element and is brought into the second state when the current flows from the first storage element to the first storage element, wherein the second storage element is brought into the fourth state when a current flows from the second storage element to the second storage element and is brought into the third state when the current flows from the second storage element to the second storage element.
Abstract:
According to one embodiment, a computer system comprises a first memory that stores a first program, a second memory that stores a second program or data, a processor, a first and a second power control circuits. The first power control circuit causes the first memory to operate at a first power consumption when detecting change of an input signal to the processor, and causes the first memory to operate at a second power consumption smaller than the first power consumption and transmits a temporary halt instruction to the processor when the execution of the first program or the second program by the processor is completed. The second power control circuit causes the second memory to operate at a third power consumption before the processor executes the second program, reads or writes the data. The second memory accepts read and write operations while operating at the third power consumption.