公开(公告)号：US20140144381A1

公开(公告)日：2014-05-29

申请号：US14116037

申请日：2012-03-15

Applicant: Masashi Mizuta ,  Yuichi Yaguchi ,  Yutaka Nishikori

Inventor： Masashi Mizuta ,  Yuichi Yaguchi ,  Yutaka Nishikori

IPC: H01L21/02 ,  H01L21/67

CPC classification number: H01L21/02041 ,  C23C16/4405 ,  H01L21/67028

Abstract: A semiconductor manufacturing apparatus component (101), to which a nitride semiconductor expressed by a general formula of AlxInyGa1-x-yN (provided that, x and y satisfy relationships of 0≦x

Abstract translation: 一种半导体制造装置组件（101），由Al x In y Ga 1-x-y N的通式表示氮化物半导体（条件是x和y满足0＆lt; nEE; x <1,0

公开(公告)号：US5231497A

公开(公告)日：1993-07-27

申请号：US805615

申请日：1991-12-12

Applicant: Masashi Mizuta

Inventor： Masashi Mizuta

IPC: G09G5/00 ,  H04N5/915 ,  H04N5/93 ,  H04N7/01 ,  H04N11/20

CPC classification number: H04N5/915 ,  H04N7/012

Abstract: A method of image data interpolation for obtaining an interlaced image signal by utilizing an image signal of only one field. The method includes the steps of obtaining another field signal by directly utilizing a given field signal or by employing a mean value interpolation processing at a portion of an image where a luminance of the image does not change in the vertical direction, obtaining another field signal by employing the mean value interpolation processing at a portion where a luminance of an image changes singularly to the vertical directions, and obtaining another field signal by directly utilizing a given field signal at some point of a portion where a luminance of an image changes a number of times in the vertical direction.

Abstract translation: 一种用于通过利用仅一场的图像信号获得隔行图像信号的图像数据插值方法。 该方法包括以下步骤：通过直接利用给定场信号或通过在图像的亮度在垂直方向上不变化的图像的一部分采用平均值内插处理来获得另一场信号，通过 在图像的亮度相对于垂直方向改变的部分采用平均值内插处理，并且通过直接利用图像的亮度的一部分的某一点的某一点直接利用给定的场信号来获得另一个场信号 时间在垂直方向。

公开(公告)号：US6100571A

公开(公告)日：2000-08-08

申请号：US326702

申请日：1999-06-07

Applicant: Masashi Mizuta ,  Masaaki Kuzuhara ,  Yasunobu Nashimoto ,  Kazunori Asano ,  Yosuke Miyoshi ,  Yasunori Mochizuki

Inventor： Masashi Mizuta ,  Masaaki Kuzuhara ,  Yasunobu Nashimoto ,  Kazunori Asano ,  Yosuke Miyoshi ,  Yasunori Mochizuki

IPC: H01L21/314 ,  H01L21/338 ,  H01L27/095 ,  H01L29/06 ,  H01L29/40 ,  H01L29/78 ,  H01L29/80 ,  H01L29/812

CPC classification number: H01L29/402 ,  H01L27/095 ,  H01L29/7813 ,  H01L29/812

Abstract: A field control electrode 9 is formed over an insulating film 6 on a channel layer 2, between a gate electrode 5 and a drain electrode 8. Tantalum oxide (Ta.sub.2 O.sub.5), for example, may be used as the material for the insulating film 6.

Abstract translation: 场控制电极9形成在沟道层2上的绝缘膜6之间，栅电极5和漏电极8之间。例如，可以使用氧化钽（Ta 2 O 5）作为绝缘膜6的材料。

公开(公告)号：US20150275371A1

公开(公告)日：2015-10-01

申请号：US14375821

申请日：2012-07-11

Applicant: Masashi Mizuta

Inventor： Masashi Mizuta

IPC: C23C16/52 ,  C23C16/455 ,  C23C16/458 ,  H01L21/02

CPC classification number: C23C16/52 ,  C23C16/303 ,  C23C16/45551 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45574 ,  C23C16/4584 ,  C30B25/02 ,  C30B29/40 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02538 ,  H01L21/0262

Abstract: A vapor deposition apparatus (1) includes a deposition chamber (4) for carrying out a deposition of a film on a substrate, source gas tubes (21) and (31) for supplying a source gas, a transfer unit (5) for transferring the substrate in the interior of the deposition chamber (4) so that the substrate is alternately situated in a state where the substrate is located in a deposition region that faces the gas discharge port for supplying the source gas and in a state where the substrate is located in other region except the deposition region, while the source gas is supplied from a gas discharge port of any one of the source gas tubes (21) and (31), and a supply tube (7) for supplying a gas containing group-V element to the substrate S located in the other region.

Abstract translation: 气相沉积装置（1）包括用于在基板上进行膜的沉积的沉积室（4），用于供给源气体的源气体管（21）和（31），用于转移的转移单元 在沉积室（4）的内部的基板，使得基板交替地位于基板位于面向用于供给源气体的气体排出口的沉积区域中的状态下，并且在基板为 位于除了沉积区域之外的其它区域，而源气体是从源气体管道（21）和（31）中的任何一个的气体排出口供给的，以及用于供给含有气体的气体的供给管（7） V元件到位于另一区域中的衬底S.

公开(公告)号：US06252261B1

公开(公告)日：2001-06-26

申请号：US09342003

申请日：1999-06-28

Applicant: Akira Usui ,  Akira Sakai ,  Haruo Sunakawa ,  Masashi Mizuta ,  Yoshishige Matsumoto

Inventor： Akira Usui ,  Akira Sakai ,  Haruo Sunakawa ,  Masashi Mizuta ,  Yoshishige Matsumoto

IPC: H01L310328

CPC classification number: H01L21/02378 ,  B82Y20/00 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/02658 ,  H01L29/2003 ,  H01S5/0202 ,  H01S5/0213 ,  H01S5/0217 ,  H01S5/34333 ,  H01S2304/12

Abstract: A GaN crystal film having a mask patterned in a stripe for forming multiple growing areas on a sapphire substrate and coalesced GaN crystals covering the mask dividing the areas, grown from the neighboring growing areas, comprising defects where multiple dislocations along with the stripe are substantially aligned with the normal line of the substrate, in the crystal areas over the mask, and dislocations propagating in substantially parallel with the substrate surface while, in the vicinity of the areas where the crystals are coalesced over the mask, propagating substantially in the normal line of the substrate surface, and a manufacturing process therefor. According to this invention, there can be provided a GaN crystal film in which strain, defects and dislocations are reduced and which tends not to generate cracks.

Abstract translation: 一种GaN晶体膜，其具有在条纹上图案化的掩模，用于在蓝宝石衬底上形成多个生长区域，并且覆盖覆盖从相邻生长区域生长的区域的掩模的聚结的GaN晶体，其包括与条纹多个位错基本对齐的缺陷 与衬底的法线，在掩模上方的晶体区域中，以及基本上平行于衬底表面传播的位错，而在晶体结合在掩模上的区域附近，基本上在 基板表面及其制造工艺。 根据本发明，可以提供一种其中应变，缺陷和位错减少并且不会产生裂纹的GaN晶体膜。

公开(公告)号：US4780769A

公开(公告)日：1988-10-25

申请号：US826026

申请日：1986-02-04

Applicant: Toshihiko Numakura ,  Keiji Kanouta ,  Masashi Mizuta ,  Masayoshi Ishimaru ,  Michio Nagai

Inventor： Toshihiko Numakura ,  Keiji Kanouta ,  Masashi Mizuta ,  Masayoshi Ishimaru ,  Michio Nagai

IPC: H04N5/919 ,  H04N9/797 ,  H04N9/80 ,  H04N9/88 ,  H04N9/89

CPC classification number: H04N5/919 ,  H04N9/7973

Abstract: A recording and reproducing apparatus wherein the video signal is time base expanded and separated into two channels before being recorded with a two headed recorder on two separate channels of a magnetic medium and wherein during reproduction the two channels from the magnetic medium are supplied to a time base corrector which supplies an output to a channel mixing and time base compressor which converts the two channels into a single output signal. A burst generator inserts burst signals into the two channels before they are recorded.

Abstract translation: 一种记录和再现装置，其中视频信号被时基扩展并分离成两个通道，然后在磁介质的两个独立通道上用两头记录器进行记录，并且其中在再现期间将来自磁介质的两个通道提供到一个时间 基本校正器，其将输出提供给将两个通道转换为单个输出信号的通道混合和时基压缩器。 突发发生器在记录之前将突发信号插入两个通道。

公开(公告)号：US09273396B2

公开(公告)日：2016-03-01

申请号：US14375821

申请日：2012-07-11

Applicant: Masashi Mizuta

Inventor： Masashi Mizuta

IPC: H01L21/44 ,  C23C16/52 ,  C30B25/02 ,  C23C16/30 ,  C30B29/40 ,  C23C16/455 ,  C23C16/458 ,  H01L21/02

CPC classification number: C23C16/52 ,  C23C16/303 ,  C23C16/45551 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45574 ,  C23C16/4584 ,  C30B25/02 ,  C30B29/40 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02538 ,  H01L21/0262

Abstract: A vapor deposition apparatus includes a deposition chamber for carrying out a deposition of a film on a substrate, source gas tubes for supplying a source gas, a transfer unit for transferring the substrate in the interior of the deposition chamber so that the substrate is alternately situated in a state where the substrate is located in a deposition region that faces the gas discharge port for supplying the source gas and in a state where the substrate is located in other region except the deposition region, while the source gas is supplied from a gas discharge port of any one of the source gas tubes, and a supply tube for supplying a gas containing group-V element to the substrate S located in the other region.

Abstract translation: 蒸镀装置包括：沉积室，用于在基板上进行膜的沉积，用于供给源气体的源气体管，用于将沉积室内部的基板转移到转印单元的转印单元，使得基板交替位置 在基板位于面向用于供给源气体的气体排出口的沉积区域的状态下，并且在基板位于除了沉积区域之外的其他区域的状态下，同时源气体从气体放电 源气体管中的任一个的端口，以及用于将V族元素的气体供给到位于另一区域的基板S的供给管。

公开(公告)号：US06483135B1

公开(公告)日：2002-11-19

申请号：US09383983

申请日：1999-08-26

Applicant: Masashi Mizuta ,  Masaaki Kuzuhara ,  Yasunobu Nashimoto ,  Kazunori Asano ,  Yosuke Miyoshi ,  Yasunori Mochizuki

Inventor： Masashi Mizuta ,  Masaaki Kuzuhara ,  Yasunobu Nashimoto ,  Kazunori Asano ,  Yosuke Miyoshi ,  Yasunori Mochizuki

IPC: H01L2980

CPC classification number: H01L29/402 ,  H01L29/42316 ,  H01L29/8128

Abstract: A field effect transistor includes a semiconductor substrate with a channel layer being formed on its surface, a source electrode and a drain electrode formed at a distance on said semiconductor substrate, and a gate electrode placed between the source electrode and the drain electrode and making a Schottky junction with the channel layer. The gate electrode is provided with an overhanging field plate section and between the field plate section and the channel layer, there is laid a dielectric film. When the relative permittivity and the film thickness of the dielectric film are denoted by ∈ and t (nm), respectively, the following condition is satisfied 5≦∈

Abstract translation: 场效应晶体管包括在其表面上形成有沟道层的半导体衬底，在所述半导体衬底上形成一定距离的源电极和漏电极，以及放置在源电极和漏极之间的栅电极， 与通道层的肖特基结。 栅电极设置有突出场板部分，并且在场板部分和沟道层之间设置介电膜。 当介电膜的相对介电常数和膜厚分别表示为in和t（nm）时，满足以下条件5 <=在<8且100

公开(公告)号：US5877510A

公开(公告)日：1999-03-02

申请号：US807216

申请日：1997-02-28

Applicant: Toshio Baba ,  Masashi Mizuta ,  Tsunehiko Omori ,  Yoshimasa Kurihara ,  Tsutomu Nakanishi

Inventor： Toshio Baba ,  Masashi Mizuta ,  Tsunehiko Omori ,  Yoshimasa Kurihara ,  Tsutomu Nakanishi

IPC: H01J1/34 ,  H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072

CPC classification number: H01J1/34 ,  H01J2203/0296

Abstract: There are provided on a substrate a block layer having an electron affinity smaller than that of the substrate, a p-type strained superlattice structure having no lattice relaxation and operating as a generation region of spin polarized electrons and a surface layer for accommodating a bending portion of the energy band. The superlattice structure is formed of a multilayer in which a strained well layer and a barrier layer are alternately laminated plural times. The strained well layer has a lattice constant greater than that of the substrate and a thickness equal to or less than a wavelength of electron wave, and the barrier layer has a conduction band lower in energy than that of the strained well layer and a thickness such that an electron in the conduction band can transmit based on tunnel effect. A difference in energy between the band for heavy holes and the band for light holes is further widened in the valence band of the superlattice structure due to compressive stress in the strained well layer.

Abstract translation: 在基板上设置具有小于基板的电子亲和力的阻挡层，不具有晶格弛豫并作为自旋极化电子的产生区域工作的p型应变超晶格结构和用于容纳弯曲部分的表面层 的能量带。 超晶格结构由多层构成，其中应变阱层和阻挡层交替层叠多次。 应变阱层的晶格常数大于衬底的晶格常数，并且厚度等于或小于电子波的波长，并且阻挡层的能带的能带低于应变阱层的导带， 导带中的电子可以基于隧道效应传输。 由于应变阱层中的压应力，超晶格结构的价带中的重孔带和光孔带之间的能量差异进一步扩大。

公开(公告)号：US5159442A

公开(公告)日：1992-10-27

申请号：US591467

申请日：1990-10-01

Applicant: Masashi Mizuta

Inventor： Masashi Mizuta

IPC: H04N9/87 ,  H04N9/64

CPC classification number: H04N9/646

Abstract: A color signal processing apparatus comprising a first delay circuit for delaying an input chroma signal; a second delay circuit for delaying an output of the first delay circuit; a plurality of gain control circuits for controlling the amplitudes of the input chroma signal and the outputs of the first and second delay circuits, respectively; and an operating circuit for operating the gain-controlled amplitudes of the input chroma signal and the outputs of the first and second delay circuits, wherein the phases of the outputs of the first and second delay circuits are matched with the phase of the input chroma signal.