公开(公告)号：US20070110415A1

公开(公告)日：2007-05-17

申请号：US10573071

申请日：2004-09-24

Applicant: Tsuyoshi Tanikawa ,  Tadayuki Yakushijin ,  Yasunori Mochizuki

Inventor： Tsuyoshi Tanikawa ,  Tadayuki Yakushijin ,  Yasunori Mochizuki

IPC: H05B1/00

CPC classification number: F16K49/002 ,  F16K27/12

Abstract: The fluid controller (1) having a projecting joint (4) at the side surfaces and an operation driving part arranged at the top surface of the block shaped body (2) is heated using a heating device (11) incorporating the heaters (14) (15) and including a pair of holding members (12) (13) for sandwiching the fluid controller (1) to be heated from both sides. The body (2) is heated from both side surfaces while controlling the temperature of a bottom surface of the body (2) of the fluid controller (1).

Abstract translation: 在侧面具有突出接头（4）的流体控制器（1）和布置在块状体（2）顶表面的操作驱动部分使用加热器（14）加热， （15），并且包括用于夹持从两侧加热的流体控制器（1）的一对保持构件（12）（13）。 在控制流体控制器（1）的主体（2）的底面的温度的同时，从两个侧面加热主体（2）。

公开(公告)号：US5902393A

公开(公告)日：1999-05-11

申请号：US785654

申请日：1997-01-17

Applicant: Masaaki Nido ,  Akira Usui ,  Yasunori Mochizuki

Inventor： Masaaki Nido ,  Akira Usui ,  Yasunori Mochizuki

IPC: C30B25/02 ,  H01L21/205 ,  H01L33/32 ,  C30B1/02

CPC classification number: H01L33/325 ,  C30B25/02 ,  C30B29/406 ,  H01L33/007

Abstract: Disclosed is a method of growing 4 gallium nitride-based crystal by vapor phase epitaxy, suitable for mass production, without the necessity of thermal processing after completion of the crystal growth. The temperature of the substrate crystal immediately after completion of the crystal growth is 700.degree. C. or higher, and cooling of the substrate crystal at 700.degree. C. or lower after completion of the crystal growth is performed in an atmosphere of a hydrogen-fee carrier gas.

Abstract translation: 公开了一种通过气相外延生长4种氮化镓基晶体的方法，适用于大规模生产，而不需要在晶体生长完成后进行热处理。 晶体生长结束后的基板晶体的温度为700℃以上，结晶生长结束后的底物晶体在700℃以下的冷却在氢气气氛下进行 载气。

公开(公告)号：US6100571A

公开(公告)日：2000-08-08

申请号：US326702

申请日：1999-06-07

Applicant: Masashi Mizuta ,  Masaaki Kuzuhara ,  Yasunobu Nashimoto ,  Kazunori Asano ,  Yosuke Miyoshi ,  Yasunori Mochizuki

Inventor： Masashi Mizuta ,  Masaaki Kuzuhara ,  Yasunobu Nashimoto ,  Kazunori Asano ,  Yosuke Miyoshi ,  Yasunori Mochizuki

IPC: H01L21/314 ,  H01L21/338 ,  H01L27/095 ,  H01L29/06 ,  H01L29/40 ,  H01L29/78 ,  H01L29/80 ,  H01L29/812

CPC classification number: H01L29/402 ,  H01L27/095 ,  H01L29/7813 ,  H01L29/812

Abstract: A field control electrode 9 is formed over an insulating film 6 on a channel layer 2, between a gate electrode 5 and a drain electrode 8. Tantalum oxide (Ta.sub.2 O.sub.5), for example, may be used as the material for the insulating film 6.

Abstract translation: 场控制电极9形成在沟道层2上的绝缘膜6之间，栅电极5和漏电极8之间。例如，可以使用氧化钽（Ta 2 O 5）作为绝缘膜6的材料。

公开(公告)号：US20060096533A1

公开(公告)日：2006-05-11

申请号：US10537251

申请日：2003-10-31

Applicant: Yasunori Mochizuki ,  Megumu Makino ,  Mutsunori Koyomogi

Inventor： Yasunori Mochizuki ,  Megumu Makino ,  Mutsunori Koyomogi

IPC: H01L21/306 ,  C23C16/00

CPC classification number: F16K27/003

Abstract: A body 2 comprises a center channel block 11 and side channel blocks 12, 13. Each of shut-off valves 5, 6 is removably mounted on both the center channel block and one of the side channel blocks. The center channel block has Y-shaped channels 22 identical in number with the number of the subgas inlets 23 and each comprising one common channel 22a and two branched channels 22b, 22c. The common channel 22a of the Y-shaped channel 22 has an opening serving as the subgas inlet 23 and the branched channels 22b, 22c of the Y-shaped channel 22 communicate with the inlet ports of the corresponding pair of shut-off valves 5, 6 to thereby provide the subgas inflow channels. The main gas channel 18 and the main channel communication passageways 19 are formed in one of the side channel blocks 12, and the vent gas channel 20 and the vent channel communication passageways 21 are formed on the other side channel block 13.

Abstract translation: 主体2包括中心通道块11和侧通道块12,13。 每个截止阀5,6可拆卸地安装在中心通道块和侧通道块之一上。 中心通道块具有与子气体入口23的数量相同的Y形通道22，并且每个包括一个公共通道22a和两个分支通道22b，22c。 Y形通道22的公共通道22a具有用作副气体入口23的开口，Y形通道22的分支通道22b，22c与相应的一对关闭的入口连通 阀5,6，从而提供沼气流入通道。 主气体通道18和主通道连通通道19形成在一个侧通道块12中，并且排气通道20和通气通道连通通道21形成在另一侧通道块13上。

公开(公告)号：US06483135B1

公开(公告)日：2002-11-19

申请号：US09383983

申请日：1999-08-26

Applicant: Masashi Mizuta ,  Masaaki Kuzuhara ,  Yasunobu Nashimoto ,  Kazunori Asano ,  Yosuke Miyoshi ,  Yasunori Mochizuki

Inventor： Masashi Mizuta ,  Masaaki Kuzuhara ,  Yasunobu Nashimoto ,  Kazunori Asano ,  Yosuke Miyoshi ,  Yasunori Mochizuki

IPC: H01L2980

CPC classification number: H01L29/402 ,  H01L29/42316 ,  H01L29/8128

Abstract: A field effect transistor includes a semiconductor substrate with a channel layer being formed on its surface, a source electrode and a drain electrode formed at a distance on said semiconductor substrate, and a gate electrode placed between the source electrode and the drain electrode and making a Schottky junction with the channel layer. The gate electrode is provided with an overhanging field plate section and between the field plate section and the channel layer, there is laid a dielectric film. When the relative permittivity and the film thickness of the dielectric film are denoted by ∈ and t (nm), respectively, the following condition is satisfied 5≦∈

Abstract translation: 场效应晶体管包括在其表面上形成有沟道层的半导体衬底，在所述半导体衬底上形成一定距离的源电极和漏电极，以及放置在源电极和漏极之间的栅电极， 与通道层的肖特基结。 栅电极设置有突出场板部分，并且在场板部分和沟道层之间设置介电膜。 当介电膜的相对介电常数和膜厚分别表示为in和t（nm）时，满足以下条件5 <=在<8且100