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    STORAGE ELEMENT, STORAGE DEVICE, AND SIGNAL PROCESSING CIRCUIT
    1.
    发明申请
    STORAGE ELEMENT, STORAGE DEVICE, AND SIGNAL PROCESSING CIRCUIT 有权
    存储元件，存储器件和信号处理电路

    公开(公告)号：US20120170355A1

    公开(公告)日：2012-07-05

    申请号：US13341412

    申请日：2011-12-30

    申请人： Takuro Ohmaru ,  Masami Endo

    发明人： Takuro Ohmaru ,  Masami Endo

    IPC分类号： G11C11/24

    CPC分类号： H01L27/1052 ,  G06F1/3275 ,  G11C11/24 ,  G11C14/0009 ,  G11C19/184 ,  H01L23/5226 ,  H01L27/0629 ,  H01L27/108 ,  H01L27/10805 ,  H01L27/10897 ,  H01L28/20 ,  H01L28/40 ,  H01L29/24 ,  H01L29/26 ,  H01L29/7869 ,  Y02D10/13 ,  Y02D10/14

    摘要： A signal processing circuit whose power consumption can be suppressed is provided. In a period during which a power supply voltage is not supplied to a storage element, data stored in a first storage circuit corresponding to a nonvolatile memory can be held by a first capacitor provided in a second storage circuit. With the use of a transistor in which a channel is formed in an oxide semiconductor layer, a signal held in the first capacitor is held for a long time. The storage element can accordingly hold the stored content (data) also in a period during which the supply of the power supply voltage is stopped. A signal held by the first capacitor can be converted into the one corresponding to the state (the on state or off state) of the second transistor and read from the second storage circuit. Consequently, an original signal can be accurately read.

    摘要翻译： 提供能够抑制功耗的信号处理电路。 在不向存储元件提供电源电压的期间中，存储在与非易失性存储器相对应的第一存储电路中的数据可以由设置在第二存储电路中的第一电容器保持。 通过使用在氧化物半导体层中形成沟道的晶体管，保持在第一电容器中的信号被保持很长时间。 因此，存储元件也可以在停止供给电源电压的期间保持存储的内容（数据）。 可以将由第一电容器保持的信号转换为与第二晶体管的状态（导通状态或截止状态）对应的信号，并从第二存储电路读取。 因此，可以准确地读取原始信号。

    Integrated circuit, method for driving the same, and semiconductor device
    2.
    发明授权
    Integrated circuit, method for driving the same, and semiconductor device 有权

    公开(公告)号：US08705267B2

    公开(公告)日：2014-04-22

    申请号：US13307060

    申请日：2011-11-30

    申请人： Masami Endo ,  Takuro Ohmaru

    发明人： Masami Endo ,  Takuro Ohmaru

    IPC分类号： G11C11/24 ,  G11C11/00 ,  G11C11/34 ,  G11C8/00

    CPC分类号： H03K3/356008 ,  H03K3/012 ,  H03K21/023 ,  H03K21/403

    摘要： An integrated circuit which can be switched to a resting state and can be returned from the resting state rapidly is provided. An integrated circuit whose power consumption can be reduced without the decrease in operation speed is provided. A method for driving the integrated circuit is provided. The integrated circuit includes a first flip-flop and a second flip-flop including a nonvolatile memory circuit. In an operating state in which power is supplied, the first flip-flop retains data. In a resting state in which supply of power is stopped, the second flip-flop retains data. On transition from the operating state into the resting state, the data is transferred from the first flip-flop to the second flip-flop. On return from the resting state to the operating state, the data is transferred from the second flip-flop to the first flip-flop.

    INTEGRATED CIRCUIT, METHOD FOR DRIVING THE SAME, AND SEMICONDUCTOR DEVICE
    4.
    发明申请
    INTEGRATED CIRCUIT, METHOD FOR DRIVING THE SAME, AND SEMICONDUCTOR DEVICE 有权
    集成电路，驱动它们的方法和半导体器件

    公开(公告)号：US20120140550A1

    公开(公告)日：2012-06-07

    申请号：US13307060

    申请日：2011-11-30

    申请人： Masami Endo ,  Takuro Ohmaru

    发明人： Masami Endo ,  Takuro Ohmaru

    IPC分类号： G11C11/24 ,  G11C11/00

    CPC分类号： H03K3/356008 ,  H03K3/012 ,  H03K21/023 ,  H03K21/403

    摘要： An integrated circuit which can be switched to a resting state and can be returned from the resting state rapidly is provided. An integrated circuit whose power consumption can be reduced without the decrease in operation speed is provided. A method for driving the integrated circuit is provided. The integrated circuit includes a first flip-flop and a second flip-flop including a nonvolatile memory circuit. In an operating state in which power is supplied, the first flip-flop retains data. In a resting state in which supply of power is stopped, the second flip-flop retains data. On transition from the operating state into the resting state, the data is transferred from the first flip-flop to the second flip-flop. On return from the resting state to the operating state, the data is transferred from the second flip-flop to the first flip-flop.

    摘要翻译： 提供一种可以切换到静止状态并且可以从静止状态快速返回的集成电路。 提供一种能够在不降低运行速度的情况下降低功耗的集成电路。 提供了一种用于驱动集成电路的方法。 集成电路包括第一触发器和包括非易失性存储器电路的第二触发器。 在提供电力的操作状态下，第一触发器保持数据。 在停止供电的静止状态下，第二触发器保持数据。 在从操作状态转变到静止状态时，数据从第一触发器传送到第二触发器。 从静止状态返回到工作状态时，数据从第二触发器传送到第一触发器。

    Semiconductor device and method for manufacturing the same
    6.
    发明授权
    Semiconductor device and method for manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US08692243B2

    公开(公告)日：2014-04-08

    申请号：US13083642

    申请日：2011-04-11

    申请人： Koichiro Kamata ,  Yoshiaki Ito ,  Takuro Ohmaru

    发明人： Koichiro Kamata ,  Yoshiaki Ito ,  Takuro Ohmaru

    IPC分类号： H01L29/12 ,  H01L21/8234

    CPC分类号： H01L27/1225 ,  H01L21/76254 ,  H01L27/1251 ,  H01L27/127 ,  H01L29/66772

    摘要： An object is to reduce the number of manufacturing steps of a semiconductor device, to improve yield of a semiconductor device, or to reduce manufacturing cost of a semiconductor device. One embodiment of the present invention relates to a semiconductor device and a method for manufacturing the semiconductor device. The semiconductor device includes, over a substrate, a first transistor having a single crystal semiconductor layer in a channel formation region, a second transistor that is isolated from the first transistor with an insulating layer positioned therebetween and has an oxide semiconductor layer in a channel formation region, and a diode having a single crystal semiconductor layer and a oxide semiconductor layer.

    摘要翻译： 目的是减少半导体器件的制造步骤的数量，以提高半导体器件的产量，或者降低半导体器件的制造成本。 本发明的一个实施例涉及半导体器件和制造半导体器件的方法。 半导体器件在衬底上包括在沟道形成区域中具有单晶半导体层的第一晶体管，与第一晶体管隔离的第二晶体管，绝缘层位于其间并具有沟道形成中的氧化物半导体层 区域，以及具有单晶半导体层和氧化物半导体层的二极管。

    Semiconductor device and manufacturing method thereof
    7.
    发明申请
    Semiconductor device and manufacturing method thereof 有权
    半导体装置及其制造方法

    公开(公告)号：US20080001228A1

    公开(公告)日：2008-01-03

    申请号：US11812534

    申请日：2007-06-19

    申请人： Yutaka Shionoiri ,  Takuro Ohmaru

    发明人： Yutaka Shionoiri ,  Takuro Ohmaru

    IPC分类号： H01L27/12 ,  H01L21/84

    CPC分类号： H01L27/11293 ,  H01L21/76816 ,  H01L27/105 ,  H01L27/112 ,  H01L27/11226 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/41733

    摘要： An individual identifier is easily provided in a semiconductor device capable of wireless communication. The semiconductor device includes a thin film transistor including a channel forming region, an island-like semiconductor film including a source region and a drain region, a gate insulating film, and a gate electrode; an interlayer insulating film; a plurality of contact holes formed in the interlayer insulating film which reach one of the source region and the drain region; and a single contact hole which reaches the other of the source region and the drain region, wherein a diameter of the single contact hole is larger than a diameter of each of the plurality of contact holes, and a sum of areas of bases of the plurality of contact holes is equal to an area of a base of the single contact hole.

    摘要翻译： 在能够进行无线通信的半导体装置中容易提供个体识别符。 半导体器件包括：包括沟道形成区域的薄膜晶体管，包括源极区域和漏极区域的岛状半导体膜，栅极绝缘膜和栅电极; 层间绝缘膜; 形成在所述层间绝缘膜中的多个接触孔，其到达所述源极区域和所述漏极区域中的一个; 以及单个接触孔，其到达源区域和漏极区域中的另一个，其中单个接触孔的直径大于多个接触孔中的每一个的直径，并且多个接触孔的基底的面积之和 接触孔的面积等于单个接触孔的基部的面积。

    DC-DC converter, power source circuit, and semiconductor device
    9.
    发明授权
    DC-DC converter, power source circuit, and semiconductor device 有权

    公开(公告)号：US09209687B2

    公开(公告)日：2015-12-08

    申请号：US13477588

    申请日：2012-05-22

    申请人： Takuro Ohmaru

    发明人： Takuro Ohmaru

    IPC分类号： G05F1/575 ,  H02M3/157

    摘要： A DC-DC converter includes a control circuit, a switching element, and a constant-voltage generation portion which generates an output voltage on the basis of an input voltage supplied through the switching element. The control circuit includes AD converters which convert the input voltage and the output voltage, a signal processing circuit, a pulse modulation circuit, and a power supply control circuit which controls supply of a power supply voltage to the signal processing circuit in accordance with digital values of the input voltage and the output voltage. The signal processing circuit determines the duty ratio in accordance with the digital value of the output voltage, and the pulse modulation circuit controls the switching element. The signal processing circuit includes a memory device including a memory element, a capacitor for storing data of the memory element, and a transistor for controlling charge in the capacitor. The transistor includes an oxide semiconductor.

    Photoelectric conversion device and manufacturing method thereof
    10.
    发明授权
    Photoelectric conversion device and manufacturing method thereof 有权
    光电转换装置及其制造方法

    公开(公告)号：US09099576B2

    公开(公告)日：2015-08-04

    申请号：US13100553

    申请日：2011-05-04

    申请人： Hajime Kimura ,  Yoshiaki Ito ,  Takuro Ohmaru ,  Shunpei Yamazaki

    发明人： Hajime Kimura ,  Yoshiaki Ito ,  Takuro Ohmaru ,  Shunpei Yamazaki

    IPC分类号： H02J1/00 ,  H01L31/02 ,  H01L31/0216 ,  H01L31/068 ,  H01L31/076 ,  H02M3/158

    CPC分类号： H01L31/0201 ,  H01L31/02167 ,  H01L31/068 ,  H01L31/076 ,  H02M3/1584 ,  Y02E10/542 ,  Y02E10/547 ,  Y02E10/548 ,  Y10T307/658

    摘要： Generation of ripples and the decrease in the output voltage of a photoelectric conversion device are suppressed. The photoelectric conversion device includes a first photoelectric conversion element; a first voltage conversion element for converting the output voltage of the first photoelectric conversion element; a second photoelectric conversion element whose characteristic is different from the characteristic of the first photoelectric conversion element; a second voltage conversion element for converting the output voltage of the second photoelectric conversion element; and a control element for controlling timing of the first voltage conversion element and the second voltage conversion element.

    摘要翻译： 波纹的产生和光电转换装置的输出电压的降低被抑制。 光电转换装置包括第一光电转换元件; 用于转换第一光电转换元件的输出电压的第一电压转换元件; 第二光电转换元件，其特性与第一光电转换元件的特性不同; 用于转换第二光电转换元件的输出电压的第二电压转换元件; 以及用于控制第一电压转换元件和第二电压转换元件的定时的控制元件。