公开(公告)号：US5586462A

公开(公告)日：1996-12-24

申请号：US380947

申请日：1995-01-31

申请人： Kiyoshi Takeuchi ,  Shin Takeda ,  Masao Nakamura

发明人： Kiyoshi Takeuchi ,  Shin Takeda ,  Masao Nakamura

IPC分类号： B21D39/20 ,  B21C3/16 ,  B21C37/15 ,  B21C37/20 ,  B21D9/05 ,  B21D9/12 ,  B21B17/02 ,  B21C1/24

CPC分类号： B21C37/202 ,  B21C3/16 ,  B21C37/155 ,  B21D9/12

摘要： A device for converting a straight pipe having an annular cross-section defined between an inner diameter and an outer diameter into a bent pipe having a non-annular cross-section, and method for making the same are disclosed. The device includes a round, bar-shaped guide member having a first end portion and a second end portion which is spaced therefrom in the axial direction and for being mounted slidably with the straight pipe. A floating member is formed into a prismoid and connected to the second end of the round, bar-shaped guide member in a ball-and-socket joint. The prismoid includes a first end in the form of a small polygon whose maximum radial length is less than the inner diameter of the straight pipe, and a second end in the form of a large polygon similar to the small polygon in shape and spaced from the first end in the axial direction. The prismoid has trapezoid sides disposed between the first end and the second end in such a manner that a corner angle between two adjacent trapezoid sides decreases gradually away from the first end. A feeding device slides the straight pipe on the round, bar-shaped guide member toward the floating member so that the straight pipe is brought into engagement with the floating member, thereby establishing the non-annular cross-section of the straight pipe. Lastly, a bending device bends the resulting pipe by applying a force thereto.

摘要翻译： 公开了一种用于将具有在内径和外径之间限定的环形横截面的直管转换成具有非环形横截面的弯曲管的装置及其制造方法。 该装置包括圆形的棒状引导构件，其具有第一端部和第二端部，该第二端部沿轴向与其间隔开并且可滑动地安装在直管上。 浮动构件形成为棱柱形并且连接到球形引导构件的球形接头中的第二端。 棱柱体包括形状为小多边形的第一端，其最大径向长度小于直管的内径，并且形状为与形状上的小多边形类似的大多边形形状的第二端，并与 沿轴向第一端。 棱镜具有设置在第一端和第二端之间的梯形边，使得两个相邻梯形侧之间的角角逐渐从第一端逐渐减小。 进给装置将圆形的棒状引导构件上的直管滑动到浮动构件，使得直管与浮动构件接合，从而建立直管的非环形横截面。 最后，弯曲装置通过向其施加力而弯曲所得管。

公开(公告)号：US5860307A

公开(公告)日：1999-01-19

申请号：US738687

申请日：1996-10-28

申请人： Tamio Nakano ,  Shin Takeda ,  Kiyoshi Takeuchi

发明人： Tamio Nakano ,  Shin Takeda ,  Kiyoshi Takeuchi

IPC分类号： B21D9/05 ,  B21D7/08 ,  B21B39/02 ,  B21B17/02

CPC分类号： B21D7/08

摘要： A pipe is bent by advancing the pipe through a guide and into a ring disposed just upstream of said guide in the direction of pipe movement. The ring with the leading end of the pipe therein is moved by a controller along a predetermined curve along which the pipe is to be bent.

摘要翻译： 通过将导管推进通过引导件并沿着管子运动方向设置在所述引导件正上方的环中来弯曲管道。 其中管道前端的环通过控制器沿着管道将被弯曲的预定曲线移动。

公开(公告)号：US09740292B2

公开(公告)日：2017-08-22

申请号：US13534496

申请日：2012-06-27

申请人： Shigeru Miyamoto ,  Koichi Hayashida ,  Kiyoshi Takeuchi

发明人： Shigeru Miyamoto ,  Koichi Hayashida ,  Kiyoshi Takeuchi

IPC分类号： G02B27/22 ,  G06F3/01 ,  G06F3/03 ,  H04N13/00 ,  H04N13/04

CPC分类号： G06F3/017 ,  G02B27/22 ,  G06F3/0304 ,  H04N13/111 ,  H04N13/128 ,  H04N13/302

摘要： An exemplary information processing apparatus selectively switches between: first control where control is performed such that, in a virtual space, a position of producing no parallax on a screen of a stereoscopic display is a first position near a predetermined object; and second control where control is performed such that the position of producing no parallax is closer to a viewpoint position of virtual cameras than the first position is.

公开(公告)号：US08124976B2

公开(公告)日：2012-02-28

申请号：US12095663

申请日：2006-12-01

申请人： Koichi Takeda ,  Kiyoshi Takeuchi

发明人： Koichi Takeda ,  Kiyoshi Takeuchi

IPC分类号： H01L27/11

CPC分类号： H01L21/845 ,  H01L27/0207 ,  H01L27/11 ,  H01L27/1104 ,  H01L27/1211 ,  Y10S257/903

摘要： The present invention provides a semiconductor device including SRAM cell units each including a data holding section made up of a pair of driving transistors and a pair of load transistors, a data write section made up of a pair of access transistors, and a data read section made up of an access transistor and a driving transistor, wherein each of the transistors includes a semiconductor layer projecting upward from a base plane, a gate electrode extending from a top to opposite side surfaces of the semiconductor layer so as to stride the semiconductor layer, a gate insulating film between the gate electrode and the semiconductor layer, and source/drain areas, a longitudinal direction of each of the semiconductor layers is provided along a first direction, and for all the corresponding transistors between the SRAM cell units adjacent to each other in the first direction, the semiconductor layer in one of the corresponding transistors is located on a center line of the semiconductor layer along the first direction in the other transistor.

摘要翻译： 本发明提供了包括SRAM单元单元的半导体器件，每个SRAM单元包括由一对驱动晶体管和一对负载晶体管构成的数据保持部分，由一对存取晶体管构成的数据写入部分和数据读取部分 由存取晶体管和驱动晶体管构成，其中每个晶体管包括从基板向上突出的半导体层，从半导体层的顶部延伸到相对侧表面的栅电极，以跨越半导体层， 栅极电极和半导体层之间的栅极绝缘膜以及源极/漏极区域，沿着第一方向设置每个半导体层的纵向方向，并且对于彼此相邻的SRAM单元单元之间的所有对应的晶体管 在第一方向上，一个对应的晶体管中的半导体层位于半导体1a的中心线上 沿另一个晶体管的第一个方向。

公开(公告)号：US07719043B2

公开(公告)日：2010-05-18

申请号：US11632352

申请日：2005-07-04

申请人： Shigeharu Yamagami ,  Hitoshi Wakabayashi ,  Risho Koh ,  Kiyoshi Takeuchi ,  Masahiro Nomura ,  Koichi Takeda ,  Koichi Terashima ,  Masayasu Tanaka ,  Katsuhiko Tanaka

发明人： Shigeharu Yamagami ,  Hitoshi Wakabayashi ,  Risho Koh ,  Kiyoshi Takeuchi ,  Masahiro Nomura ,  Koichi Takeda ,  Koichi Terashima ,  Masayasu Tanaka ,  Katsuhiko Tanaka

IPC分类号： H01L27/108 ,  H01L29/94

CPC分类号： H01L21/84 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/823828 ,  H01L21/823878 ,  H01L27/1203 ,  H01L29/7851

摘要： The present invention relates to a semiconductor device including a Fin type field effect transistor (FET) having a protrusive semiconductor layer protruding from a substrate plane, a gate electrode formed so as to straddle the protrusive semiconductor layer, a gate insulating film between the gate electrode and the protrusive semiconductor layer, and source and drain regions provided in the protrusive semiconductor layer, wherein the semiconductor device has on a semiconductor substrate an element forming region having a Fin type FET, a trench provided on the semiconductor substrate for separating the element forming region from another element forming region, and an element isolation insulating film in the trench; the element forming region has a shallow substrate flat surface formed by digging to a depth shallower than the bottom surface of the trench and deeper than the upper surface of the semiconductor substrate, a semiconductor raised portion protruding from the substrate flat surface and formed of a part of the semiconductor substrate, and an insulating film on the shallow substrate flat surface; and the protrusive semiconductor layer of the Fin type FET is formed of a portion protruding from the insulating film of the semiconductor raised portion.

摘要翻译： 本发明涉及一种半导体器件，其包括具有从衬底平面突出的突出半导体层的鳍型场效应晶体管（FET），形成为跨越突出半导体层的栅极电极，栅极电极 所述突出半导体层以及设置在所述突出半导体层中的源极和漏极区域，其中所述半导体器件在半导体衬底上具有具有鳍型FET的元件形成区域，设置在所述半导体衬底上的沟槽，用于将所述元件形成区域 来自另一个元件形成区域，以及沟槽中的元件隔离绝缘膜; 元件形成区域具有通过挖掘到比沟槽的底表面浅的深度而比半导体衬底的上表面更深的深浅的衬底平坦表面，从衬底平坦表面突出并形成的半导体凸起部分 的半导体衬底，以及在浅衬底平面上的绝缘膜; 并且鳍式FET的突出半导体层由从半导体凸起部分的绝缘膜突出的部分形成。

公开(公告)号：US07701018B2

公开(公告)日：2010-04-20

申请号：US10593300

申请日：2005-03-22

申请人： Shigeharu Yamagami ,  Hitoshi Wakabayashi ,  Kiyoshi Takeuchi ,  Atsushi Ogura ,  Masayasu Tanaka ,  Masahiro Nomura ,  Koichi Takeda ,  Toru Tatsumi ,  Koji Watanabe ,  Koichi Terashima

发明人： Shigeharu Yamagami ,  Hitoshi Wakabayashi ,  Kiyoshi Takeuchi ,  Atsushi Ogura ,  Masayasu Tanaka ,  Masahiro Nomura ,  Koichi Takeda ,  Toru Tatsumi ,  Koji Watanabe ,  Koichi Terashima

IPC分类号： H01L27/088

CPC分类号： H01L29/785 ,  H01L29/41791 ,  H01L29/66795 ,  H01L29/6681 ,  H01L2029/7858

摘要： A semiconductor device comprising a first semiconductor region and a second semiconductor region, (a) wherein a field effect transistor is comprised of the first semiconductor region comprising at least one semiconductor layer(s) protruding upward from a substrate, a gate electrode(s) formed via an insulating film such that the gate electrode(s) strides over the semiconductor layer(s) and source/drain regions provided in the semiconductor layer(s) on both sides of the gate electrode(s), whereby a channel region is formed in at least both sides of the semiconductor layer(s), (b) wherein the second semiconductor region comprises semiconductor layers protruding upward from the substrate and placed, at least opposing the first semiconductor region at both ends in the direction perpendicular to a channel current direction and the side surface of the semiconductor layers facing the first semiconductor region is parallel to the channel current direction.

摘要翻译： 一种包括第一半导体区域和第二半导体区域的半导体器件，（a）其中场效应晶体管由包括从衬底向上突出的至少一个半导体层的第一半导体区域，栅电极， 通过绝缘膜形成，使得栅电极跨越设置在栅电极两侧的半导体层中的半导体层和源极/漏极区，由此沟道区是 形成在所述半导体层的至少两侧，（b），其中所述第二半导体区域包括从所述衬底向上突出的半导体层，并且至少相对于与沟道垂直的方向的两端处的所述第一半导体区域相对 电流方向和面对第一半导体区域的半导体层的侧表面平行于沟道电流方向。

公开(公告)号：US07687229B2

公开(公告)日：2010-03-30

申请号：US11660978

申请日：2005-08-23

申请人： Yasuaki Deguchi ,  Kiyoshi Takeuchi ,  Mamoru Sakurazawa ,  Makoto Yamada ,  Takehiko Satou

发明人： Yasuaki Deguchi ,  Kiyoshi Takeuchi ,  Mamoru Sakurazawa ,  Makoto Yamada ,  Takehiko Satou

IPC分类号： G03C11/00 ,  G03C7/46 ,  G03C1/08 ,  G03C7/26 ,  G03C7/32

CPC分类号： G03C7/3885 ,  G03C7/3022 ,  G03C7/32 ,  G03C7/36 ,  G03C7/3825 ,  G03C7/39208 ,  G03C2007/3025 ,  G03C2200/27

摘要： A silver halide color photographic light-sensitive material having, on a support, at least each one light-sensitive silver halide emulsion layers containing yellow-, magenta-, or cyan-dye-forming-coupler, and at least one light-insensitive hydrophilic colloid layer, wherein at least one of the dye-forming couplers is a dye-forming coupler that forms an azomethine dye having a solubility of 1×10−8 mol/L to 5×10−3 mol/L in ethyl acetate; and an image forming method using the light-sensitive material.

摘要翻译： 一种卤化银彩色摄影感光材料，其在支持体上具有至少每一个含有黄色，魔力或青色染料成色剂的感光卤化银乳剂层和至少一种不透光的亲水性 胶体层，其中至少一种成色成色剂是在乙酸乙酯中形成溶解度为1×10 -8 mol / L至5×10 -3 mol / L的偶氮甲碱染料的染料形成成色剂; 以及使用该感光材料的图像形成方法。

公开(公告)号：US20100076741A1

公开(公告)日：2010-03-25

申请号：US12527862

申请日：2008-02-13

申请人： Kiyoshi Takeuchi

发明人： Kiyoshi Takeuchi

IPC分类号： G06F17/50 ,  G06F17/18

CPC分类号： G06F17/504

摘要： A system for determining a worst condition, wherein, in a model for which one or more parameters included in a model function that simulates a circuit performance index are random variable(s) to simulate the circuit performance index and fluctuations thereof, the parameter(s) for which the circuit performance index assumes a maximum or minimum value that is to be assumed from the viewpoint of designing is determined as the worst condition; the system comprises a worst condition search unit that searches for a point, having a maximum or minimum value of the circuit performance index, on an equi-probability surface corresponding to a preset good product ration within a space defined by the parameter(s); the point thus searched being determined as the worst condition.

摘要翻译： 一种用于确定最差状况的系统，其中，在模拟包括在模拟电路性能指标的模型函数中的一个或多个参数的模型中，用于模拟电路性能指标及其波动的随机变量， ）将电路性能指标设定为从设计的观点假设的最大值或最小值被确定为最差条件; 所述系统包括最差条件搜索单元，其在具有所述电路性能指标的最大值或最小值的点上，在对应于由所述参数限定的空间内的预设好产品比例的等概率表面上进行搜索; 这样搜索的点被确定为最差条件。

公开(公告)号：US07629459B2

公开(公告)日：2009-12-08

申请号：US11280399

申请日：2005-11-17

申请人： Katsumi Kobayashi ,  Yasuhiro Ishiwata ,  Nobuo Seto ,  Kiyoshi Takeuchi

发明人： Katsumi Kobayashi ,  Yasuhiro Ishiwata ,  Nobuo Seto ,  Kiyoshi Takeuchi

IPC分类号： C07D487/04 ,  C09B29/00

CPC分类号： C07D487/04

摘要： A compound represented by formula (I):Formula (I) wherein Z1 is atoms necessary for forming an aromatic ring; Z2 is atoms necessary for forming an aromatic hetero ring; V1 and V2 each are a substituent, and at least one of V1 and V2 is a hydroxyl, primary- or secondary- or tertiary-amino, acylamino, or sulfonamido group; r is 1 to 4; s is 1 to 4; the ring formed by Z1 or Z2 may have a substituent other than V1 or V2; M1 is a counter ion; m1 is the number necessary for neutralizing charge; and X1 and X2 each are a carbon or hetero atom, and at least one of X1 and X2 is a hetero atom.

摘要翻译： 由式（I）表示的化合物：式（I）其中Z 1是形成芳环所必需的原子; Z2是形成芳族杂环所必需的原子; V1和V2各自为取代基，V1和V2中的至少一个为羟基，伯或仲或叔氨基，酰氨基或亚磺酰氨基; r为1〜4; s是1到4; 由Z1或Z2形成的环可以具有除V1或V2以外的取代基; M1是抗衡离子; m1是中和电荷所需的数字; X 1和X 2各自为碳原子或杂原子，X 1和X 2中的至少一个为杂原子。

公开(公告)号：US20090134454A1

公开(公告)日：2009-05-28

申请号：US11921685

申请日：2006-06-05

申请人： Kiyoshi Takeuchi ,  Katsuhiko Tanaka

发明人： Kiyoshi Takeuchi ,  Katsuhiko Tanaka

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L21/84 ,  H01L27/1203 ,  H01L29/42384 ,  H01L29/66795 ,  H01L29/785

摘要： A constant distance can be maintained between source/drain regions without providing a gate side wall by forming a gate electrode comprising an eaves structure, and a uniform dopant concentration is kept within a semiconductor by ion implantation. As a result, a FinFET excellent in element properties and operation properties can be obtained. A field effect transistor, wherein a gate structure body is a protrusion that protrudes toward source and drain regions sides in a channel length direction and has a channel length direction width larger than that of the part adjacent to the insulating film in a gate electrode, and the protrusion comprises an eaves structure formed by the protrusion that extends in a gate electrode extending direction on the top surface of the semiconductor layer.

摘要翻译： 通过形成包括檐结构的栅电极，通过离子注入将均匀的掺杂剂浓度保持在半导体内，可以在源极/漏极区之间保持恒定的距离而不提供栅极侧壁。 结果，可以获得元件性能和操作性能优异的FinFET。 一种场效应晶体管，其中栅极结构体是在沟道长度方向上朝向源极和漏极区域侧突出的突起，并且沟道长度方向宽度大于栅电极中与绝缘膜相邻的部分的沟道长度方向宽度;以及 突起包括由在半导体层的顶表面上沿栅电极延伸方向延伸的突起形成的檐结构。