公开(公告)号：US20110097897A1

公开(公告)日：2011-04-28

申请号：US12908361

申请日：2010-10-20

申请人： Katsuhiko TANAKA

发明人： Katsuhiko TANAKA

IPC分类号： H01L21/768

CPC分类号： H01L21/76846 ,  H01L21/2855 ,  H01L21/76814 ,  H01L21/76858 ,  H01L21/76876 ,  H01L21/76882 ,  H01L23/53223 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for manufacturing a semiconductor device, including: forming a barrier seed Ti layer covering a recess in an insulating film; forming a first barrier TiN layer by sputtering; forming a second barrier TiN layer by sputtering with a substrate bias power higher than that in forming the first barrier TiN layer; forming a first wiring seed Ti layer by sputtering; forming a second wiring seed Ti layer by sputtering with a substrate bias power higher than that in forming the first wiring seed Ti layer; forming a first wiring seed Al layer by sputtering; forming a second wiring seed Al layer by sputtering with a substrate bias power higher than that in forming the first wiring seed Al layer; forming Ti—Al alloy in the recess by a heating; and forming an Al wiring material layer so as to fill the recess therewith by sputtering and heating.

摘要翻译： 一种制造半导体器件的方法，包括：形成覆盖绝缘膜中的凹部的阻挡晶种Ti层; 通过溅射形成第一阻挡层TiN层; 通过溅射形成第二阻挡TiN层，其中衬底偏压功率高于形成第一阻挡层TiN层时的衬底偏压功率; 通过溅射形成第一布线种子Ti层; 通过溅射形成第二布线晶种Ti层，其中衬底偏压功率高于形成第一布线晶种Ti层时的衬底偏压功率; 通过溅射形成第一布线种子Al层; 通过溅射形成第二布线种子Al层，其中衬底偏压功率高于形成第一布线种子Al层的偏置功率; 通过加热在凹部中形成Ti-Al合金; 并且通过溅射和加热形成Al布线材料层以便填充凹部。

公开(公告)号：US07719043B2

公开(公告)日：2010-05-18

申请号：US11632352

申请日：2005-07-04

申请人： Shigeharu Yamagami ,  Hitoshi Wakabayashi ,  Risho Koh ,  Kiyoshi Takeuchi ,  Masahiro Nomura ,  Koichi Takeda ,  Koichi Terashima ,  Masayasu Tanaka ,  Katsuhiko Tanaka

发明人： Shigeharu Yamagami ,  Hitoshi Wakabayashi ,  Risho Koh ,  Kiyoshi Takeuchi ,  Masahiro Nomura ,  Koichi Takeda ,  Koichi Terashima ,  Masayasu Tanaka ,  Katsuhiko Tanaka

IPC分类号： H01L27/108 ,  H01L29/94

CPC分类号： H01L21/84 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/823828 ,  H01L21/823878 ,  H01L27/1203 ,  H01L29/7851

摘要： The present invention relates to a semiconductor device including a Fin type field effect transistor (FET) having a protrusive semiconductor layer protruding from a substrate plane, a gate electrode formed so as to straddle the protrusive semiconductor layer, a gate insulating film between the gate electrode and the protrusive semiconductor layer, and source and drain regions provided in the protrusive semiconductor layer, wherein the semiconductor device has on a semiconductor substrate an element forming region having a Fin type FET, a trench provided on the semiconductor substrate for separating the element forming region from another element forming region, and an element isolation insulating film in the trench; the element forming region has a shallow substrate flat surface formed by digging to a depth shallower than the bottom surface of the trench and deeper than the upper surface of the semiconductor substrate, a semiconductor raised portion protruding from the substrate flat surface and formed of a part of the semiconductor substrate, and an insulating film on the shallow substrate flat surface; and the protrusive semiconductor layer of the Fin type FET is formed of a portion protruding from the insulating film of the semiconductor raised portion.

摘要翻译： 本发明涉及一种半导体器件，其包括具有从衬底平面突出的突出半导体层的鳍型场效应晶体管（FET），形成为跨越突出半导体层的栅极电极，栅极电极 所述突出半导体层以及设置在所述突出半导体层中的源极和漏极区域，其中所述半导体器件在半导体衬底上具有具有鳍型FET的元件形成区域，设置在所述半导体衬底上的沟槽，用于将所述元件形成区域 来自另一个元件形成区域，以及沟槽中的元件隔离绝缘膜; 元件形成区域具有通过挖掘到比沟槽的底表面浅的深度而比半导体衬底的上表面更深的深浅的衬底平坦表面，从衬底平坦表面突出并形成的半导体凸起部分 的半导体衬底，以及在浅衬底平面上的绝缘膜; 并且鳍式FET的突出半导体层由从半导体凸起部分的绝缘膜突出的部分形成。

公开(公告)号：US20090134454A1

公开(公告)日：2009-05-28

申请号：US11921685

申请日：2006-06-05

申请人： Kiyoshi Takeuchi ,  Katsuhiko Tanaka

发明人： Kiyoshi Takeuchi ,  Katsuhiko Tanaka

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L21/84 ,  H01L27/1203 ,  H01L29/42384 ,  H01L29/66795 ,  H01L29/785

摘要： A constant distance can be maintained between source/drain regions without providing a gate side wall by forming a gate electrode comprising an eaves structure, and a uniform dopant concentration is kept within a semiconductor by ion implantation. As a result, a FinFET excellent in element properties and operation properties can be obtained. A field effect transistor, wherein a gate structure body is a protrusion that protrudes toward source and drain regions sides in a channel length direction and has a channel length direction width larger than that of the part adjacent to the insulating film in a gate electrode, and the protrusion comprises an eaves structure formed by the protrusion that extends in a gate electrode extending direction on the top surface of the semiconductor layer.

摘要翻译： 通过形成包括檐结构的栅电极，通过离子注入将均匀的掺杂剂浓度保持在半导体内，可以在源极/漏极区之间保持恒定的距离而不提供栅极侧壁。 结果，可以获得元件性能和操作性能优异的FinFET。 一种场效应晶体管，其中栅极结构体是在沟道长度方向上朝向源极和漏极区域侧突出的突起，并且沟道长度方向宽度大于栅电极中与绝缘膜相邻的部分的沟道长度方向宽度;以及 突起包括由在半导体层的顶表面上沿栅电极延伸方向延伸的突起形成的檐结构。

公开(公告)号：US20080289756A1

公开(公告)日：2008-11-27

申请号：US11889036

申请日：2007-08-08

申请人： Shigeo Maeda ,  Katsuhiko Tanaka ,  Akira Ishii ,  Susumu Sugiyama

发明人： Shigeo Maeda ,  Katsuhiko Tanaka ,  Akira Ishii ,  Susumu Sugiyama

IPC分类号： B32B37/14

CPC分类号： G11B7/13927 ,  G02B26/0825 ,  G11B7/1362

摘要： A manufacturing method for variable shape mirrors suitable for mass production includes steps: for overlaying a pair of jigs having protruding bar portions like comb teeth on a support substrate so that the protruding bar portions are orthogonal to each other, and inserting support pillars and piezoelectric elements into through hole portions that are formed by gaps between the protruding bar portions, and placing a mirror substrate on the support pillars and the piezoelectric elements; for bonding at least the support substrate and the support pillars, the support substrate and the piezoelectric elements, and the mirror substrate and the support pillars to each other, respectively; for drawing out the jig in the direction opposite to a protruding direction of the protruding bar portion; and for forming a reflection film on an outer surface of the mirror substrate.

摘要翻译： 适用于批量生产的可变形状镜的制造方法包括以下步骤：将一对具有诸如梳齿的突出杆部的夹具叠置在支撑基板上，使得突出的杆部彼此正交，并且插入支撑柱和压电元件 进入由突出的棒部之间的间隙形成的通孔部分，并将反射镜基板放置在支撑柱和压电元件上; 用于至少将支撑基板和支撑柱，支撑基板和压电元件以及反射镜基板和支撑柱彼此粘合; 用于在与所述突出杆部的突出方向相反的方向上拉出所述夹具; 并且用于在反射镜基板的外表面上形成反射膜。

公开(公告)号：US20080278789A1

公开(公告)日：2008-11-13

申请号：US12117861

申请日：2008-05-09

申请人： Fuminori Tanaka ,  Shigeo Maeda ,  Katsuhiko Tanaka ,  Akira Ishii ,  Susumu Sugiyama

发明人： Fuminori Tanaka ,  Shigeo Maeda ,  Katsuhiko Tanaka ,  Akira Ishii ,  Susumu Sugiyama

IPC分类号： G02B26/08

CPC分类号： G02B26/0825 ,  G02B26/0858 ,  G11B7/1362 ,  G11B7/13925

摘要： In a variable shape mirror including a base substrate; a mirror with a mirror surface; a fixed part, arranged on the base substrate, for fixing the mirror and the base substrate; and an actuator using a piezoelectric ceramics arranged between the base substrate and the mirror; an initial voltage of the actuator is a negative voltage. The initial voltage differs for each actuator; and is larger than or equal to a voltage at which a displacement of the actuator becomes minimum and smaller than zero voltage. The negative initial voltage is a bias voltage, and a voltage stroke is performed while applying the bias voltage.

摘要翻译： 在包括基底的可变形镜中; 镜子与镜面; 固定部，布置在基底基板上，用于固定反射镜和基底; 以及使用布置在基底基板和反射镜之间的压电陶瓷的致动器; 致动器的初始电压为负电压。 每个执行器的初始电压不同; 并且大于或等于致动器的位移变为最小并小于零电压的电压。 负的初始电压是偏置电压，并且在施加偏置电压时执行电压冲程。

公开(公告)号：US07422335B2

公开(公告)日：2008-09-09

申请号：US11406498

申请日：2006-04-19

申请人： Hitoshi Fujii ,  Susumu Sugiyama ,  Akira Ishii ,  Katsuhiko Tanaka ,  Wataru Kuze

发明人： Hitoshi Fujii ,  Susumu Sugiyama ,  Akira Ishii ,  Katsuhiko Tanaka ,  Wataru Kuze

IPC分类号： G02B5/08

CPC分类号： G02B7/1822 ,  G02B26/0825

摘要： In a variable-shape mirror of which the shape of the mirror surface can be varied, a mirror portion is bonded only to a fixed portion and not to a piezoelectric element. When the piezoelectric element is not operating, the mirror portion, receiving a predetermined force from the piezoelectric element, makes contact with the piezoelectric element. When the piezoelectric element contracts, the mirror portion tends to restore its original shape by its counterforce. Thus, even when the piezoelectric element contracts, the contact between the mirror portion and the piezoelectric element is held, and hence the electric conduction to the piezoelectric element is maintained.

摘要翻译： 在镜面的形状可以变化的可变形反射镜中，镜部仅与固定部分接合而不与压电元件接合。 当压电元件不工作时，接收来自压电元件的预定力的反射镜部分与压电元件接触。 当压电元件收缩时，反射镜部分倾向于通过其反作用力恢复其原始形状。 因此，即使当压电元件收缩时，保持反射镜部分和压电元件之间的接触，因此保持对压电元件的导电。

公开(公告)号：US07386603B2

公开(公告)日：2008-06-10

申请号：US10177210

申请日：2002-06-24

申请人： Rikio Shiba ,  Katsuhiko Tanaka ,  Takayuki Nagatsuka ,  Yukihiko Shimizu

发明人： Rikio Shiba ,  Katsuhiko Tanaka ,  Takayuki Nagatsuka ,  Yukihiko Shimizu

IPC分类号： G06F15/16

CPC分类号： G06Q30/02

摘要： Contents are distributed on the basis of information of a hobby and an address of the user and the like. The distribution of the contents is controlled also on the basis of a result of comparison of a reception intensity regarding contents of 3 or more levels set on the user side and a distribution intensity set as attributes into the contents on a distributing side.

摘要翻译： 内容是根据用户的兴趣和地址的信息等分发的。 内容的分配也根据对用户侧设定的3级以上的内容的接收强度的比较结果和作为分配侧的内容的属性设定的分布强度进行比较的结果来进行控制。

公开(公告)号：US07371680B2

公开(公告)日：2008-05-13

申请号：US11211531

申请日：2005-08-26

申请人： Katsuhiko Tanaka

发明人： Katsuhiko Tanaka

IPC分类号： H01L21/4763

CPC分类号： H01L21/76877 ,  H01L21/28556 ,  H01L21/7685 ,  H01L21/76876

摘要： A method of manufacturing a semiconductor device is achieved by forming an interlayer insulating film on a conductive portion formed in a semiconductor substrate which is placed in a chamber. A contact hole is formed to pass through the interlayer insulating film to the conductive portion, and a barrier metal layer is formed to cover a bottom portion of side wall portion of the contact hole. A tungsten layer is formed from a material gas containing fluorine and the fluorine is removed from the tungsten layer through a post purge process. The tungsten layer is formed to fill the contact hole in which the barrier metal layer has been formed.

摘要翻译： 半导体器件的制造方法是通过在形成在放置在腔室中的半导体衬底中的导电部分上形成层间绝缘膜来实现的。 形成接触孔以通过层间绝缘膜到导电部分，并且形成阻挡金属层以覆盖接触孔的侧壁部分的底部。 由含氟的原料气体形成钨层，通过柱后净化工序将氟从钨层除去。 形成钨层以填充形成阻挡金属层的接触孔。

公开(公告)号：US20080037149A1

公开(公告)日：2008-02-14

申请号：US11889068

申请日：2007-08-08

申请人： Shigeo Maeda ,  Katsuhiko Tanaka ,  Akira Ishii ,  Susumu Sugiyama

发明人： Shigeo Maeda ,  Katsuhiko Tanaka ,  Akira Ishii ,  Susumu Sugiyama

IPC分类号： G02B7/182

CPC分类号： G02B26/0858 ,  G02B26/06

摘要： A manufacturing method for variable shape mirrors, which is suitable for mass production, includes a bonding step for sandwiching support pillars and piezoelectric elements between a support substrate and a mirror substrate, and bonding at least the support substrate and the support pillar to each other, the support substrate and the piezoelectric element to each other, and the mirror substrate and the support pillars to each other, respectively, and an elastic film forming step for forming a flat elastic film on the outer surface of the mirror substrate, and a reflection film forming step for forming a reflection film on the elastic film.

摘要翻译： 适用于大规模生产的可变形状镜的制造方法包括：将支撑柱和压电元件夹在支撑基板和反射镜基板之间并将至少支撑基板和支撑柱彼此粘合的结合步骤， 支撑基板和压电元件以及反射镜基板和支撑柱彼此分别形成，并且在反射镜基板的外表面上形成平坦的弹性膜的弹性膜形成步骤和反射膜 在弹性膜上形成反射膜的形成步骤。

公开(公告)号：US20080037148A1

公开(公告)日：2008-02-14

申请号：US11889046

申请日：2007-08-08

申请人： Fuminori Tanaka ,  Katsuhiko Tanaka ,  Akira Ishii ,  Susumu Sugiyama

发明人： Fuminori Tanaka ,  Katsuhiko Tanaka ,  Akira Ishii ,  Susumu Sugiyama

IPC分类号： G02B7/185 ,  G02B5/08

CPC分类号： G11B7/13927 ,  G02B26/0825 ,  G11B7/1362

摘要： A variable shape mirror includes a support substrate, a mirror substrate that is opposed to the support substrate, a fixing member that is disposed on the support substrate and fixes the mirror substrate, and a piezoelectric element that is disposed on the support substrate and is expanded or contracted so as to deform a reflection plane of the mirror substrate. A bonding layer for bonding the mirror substrate and the fixing member to each other is provided to the surface of the mirror substrate opposite to the surface on which the reflection plane is formed, and the bonding layer is formed in an area that corresponds to the outside of an incident area of a light beam that enters the reflection plane.

摘要翻译： 可变形镜包括支撑基板，与支撑基板相对的反射镜基板，设置在支撑基板上并固定反射镜基板的固定元件以及设置在支撑基板上并被扩展的压电元件 或收缩以使反射镜基板的反射平面变形。 在与反射面形成面相反的反射镜基板的表面设置用于将反射镜基板和固定部件接合的接合层，在与外部相对应的区域形成接合层 入射到反射面的光束的入射区域。