公开(公告)号：US20130244141A1

公开(公告)日：2013-09-19

申请号：US13599152

申请日：2012-08-30

申请人： Kazuya FUKUHARA ,  Shingo Kanamitsu

发明人： Kazuya FUKUHARA ,  Shingo Kanamitsu

IPC分类号： G03F1/38 ,  G03F7/20

CPC分类号： G03F1/26 ,  G03F1/28

摘要： According to one embodiment, a photomask includes a mask substrate transparent to light, a light shielding pattern formed on the mask substrate, and a thin film portion that is provided at a part of the light shielding pattern and is thinned to have a higher light transmittance than the light shielding pattern, in which the thin film portion is arranged with respect to a light shielding pattern that is sensitive to a focus shift so that a sensitivity becomes stable and is not arranged with respect to a light shielding pattern whose sensitivity to a focus shift is stable.

摘要翻译： 根据一个实施例，光掩模包括对光透明的掩模基板，形成在掩模基板上的遮光图案，以及设置在遮光图案的一部分处的薄膜部分，并且被薄化以具有更高的透光率 其中薄膜部分相对于对聚焦偏移敏感的遮光图案设置，使得灵敏度变得稳定并且不对关于对焦点的敏感度的遮光图案设置的遮光图案 班次稳定。

公开(公告)号：US20100195069A1

公开(公告)日：2010-08-05

申请号：US12696111

申请日：2010-01-29

申请人： Kazuya FUKUHARA

发明人： Kazuya FUKUHARA

IPC分类号： G03B27/68 ,  G03F7/20

CPC分类号： G03B27/68 ,  G03F1/36 ,  G03F1/70 ,  G03F7/70441 ,  G03F7/705

摘要： An exposure method has acquiring first OPE (Optical Proximity Effect) error corresponding to a first and second transcriptional pattern portions formed by transcribing a first and second pattern portions of a mask pattern onto a substrate with an exposure apparatus, computing a first correction amount of an exposure condition, the first correction amount reducing the first OPE error, computing a best focus difference between the first transcriptional pattern portion and the second transcriptional pattern portion transcribed with the exposure apparatus to which the first correction amount is imparted, computing a second correction amount of a projection optical system of the exposure apparatus, the second correction amount reducing the best focus difference, acquiring second OPE error corresponding to the first and second transcriptional pattern portions transcribed with the exposure apparatus to which the first and second correction amounts are imparted, and performing exposure processing with the exposure apparatus using a mask comprising the mask pattern, the first correction amount and the second correction amount being imparted to the exposure apparatus, when the second OPE error is included in a predetermined range.

摘要翻译： 曝光方法获得与通过用曝光装置将掩模图案的第一图案部分和第二图案部分转印到基板上形成的第一和第二转录图案部分相对应的第一OPE（光学近似效应）误差，计算第一校正量 曝光条件，第一校正量减小第一OPE误差，计算第一转录图案部分与被赋予第一校正量的曝光装置转录的第二转录图案部分之间的最佳聚焦差，计算第二校正量 曝光装置的投影光学系统，第二校正量减少最佳聚焦差异，获取与施加了第一和第二校正量的曝光装置转录的第一和第二转录图案部分相对应的第二OPE误差，并执行 曝光过程 当第二OPE误差被包括在预定范围内时，使用包括掩模图案的掩模的曝光装置施加第一校正量和第二校正量给曝光装置。

公开(公告)号：US20110101544A1

公开(公告)日：2011-05-05

申请号：US12913332

申请日：2010-10-27

申请人： Kazuya FUKUHARA ,  Kiyonori Yoshitomi ,  Takehiko Ikegami ,  Yujiro Kawasoe

发明人： Kazuya FUKUHARA ,  Kiyonori Yoshitomi ,  Takehiko Ikegami ,  Yujiro Kawasoe

IPC分类号： H01L23/498 ,  H01L21/60

CPC分类号： H01L23/49575 ,  H01L21/56 ,  H01L23/3107 ,  H01L23/4952 ,  H01L23/49541 ,  H01L24/05 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/78 ,  H01L24/85 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05556 ,  H01L2224/05647 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48465 ,  H01L2224/48647 ,  H01L2224/48847 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49113 ,  H01L2224/49171 ,  H01L2224/49179 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/85148 ,  H01L2224/85181 ,  H01L2224/85345 ,  H01L2224/92247 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/43

摘要： A semiconductor device permitting the reduction of cost is disclosed. In a semiconductor package wherein electrode pads of a semiconductor chip and corresponding inner leads are electrically coupled with each other through a plurality of bonding wires, sensing wires (second and fourth bonding wires) are made thinner than other bonding wires (first and third bonding wires) coupled to inner leads same as those with the sensing wires coupled thereto, thereby reducing the cost of gold wires to attain the reduction in cost of the semiconductor package.

摘要翻译： 公开了允许降低成本的半导体器件。 在半导体封装中，半导体芯片的电极焊盘和对应的内部引线通过多根接合线彼此电耦合，使感测线（第二和第四接合线）比其它接合线（第一和第三接合线 ）耦合到与将感测线耦合到其上的内引线相同的内引线，从而降低金线的成本以实现半导体封装的成本降低。

公开(公告)号：US20120163699A1

公开(公告)日：2012-06-28

申请号：US13231952

申请日：2011-09-13

申请人： Kazuya FUKUHARA

发明人： Kazuya FUKUHARA

IPC分类号： G06K9/00 ,  G03F7/20

CPC分类号： G03F1/84 ,  G03F1/70

摘要： According to one embodiment, a mask determination method includes at least one of the in-plane error average value and the distribution of in-plane dispersions in a mask plane are measured with respect to at least one of the dimension and the optical characteristics of a mask pattern formed on a mask. Then, an illumination condition, under which a cost function representing an image performance formed on a substrate approaches a desired value when the exposure light is irradiated onto the mask and an on-substrate pattern is formed, is calculated based on at least one of the measured values. Further, whether the mask is acceptable or defective is determined based on the image performance when the on-substrate pattern is formed under the illumination condition.

摘要翻译： 根据一个实施例，掩模确定方法包括至少一个平面内误差平均值和掩模平面内平面内分散的分布相对于尺寸和光学特性中的至少一个来测量 在掩模上形成的掩模图案。 然后，基于下述中的至少一个来计算照明条件，在该照明条件下，表示形成在基板上的图像性能的成本函数在曝光光照射到掩模上并且形成基板上图案时接近期望值 测量值。 此外，基于在照明条件下形成衬底图案时的图像性能来确定掩模是否可接受或有缺陷。

公开(公告)号：US20090190118A1

公开(公告)日：2009-07-30

申请号：US12358519

申请日：2009-01-23

申请人： Kazuya FUKUHARA

发明人： Kazuya FUKUHARA

IPC分类号： G03B27/32 ,  G03F1/00

CPC分类号： G03B27/32 ,  G03F1/44 ,  G03F7/70641

摘要： An exposure apparatus inspection mask has asymmetric diffraction grating regions for generating +1-order diffracted light and −1-order diffracted light having a different diffraction efficiency. The asymmetric diffraction grating region includes: a transparent substrate; semi-transparent phase shifter films selectively and periodically disposed on the transparent substrate at a predetermined pitch; and shade films selectively and periodically disposed on the phase shifter films at a predetermined pitch. The phase shifter films are formed to have such a thickness that the phase difference between the phase of first light passing through only the transparent substrate and the phase of second light passing through the phase shifter films and the transparent substrate is set to a value other than 180°×n (n is an integer equal to or larger than 0).

摘要翻译： 曝光装置检查掩模具有用于产生+1级衍射光的不对称衍射光栅区域和具有不同衍射效率的-1级衍射光。 不对称衍射光栅区域包括：透明基板; 选择性地且周期性地以预定间距设置在透明基板上的半透明移相器膜; 以及以预定间距选择性地和周期性地设置在移相器膜上的遮光膜。 移相器膜形成为使得仅通过透明基板的第一光的相位与通过移相器膜和透明基板的第二光的相位之间的相位差被设定为除了 180°xn（n是等于或大于0的整数）。

公开(公告)号：US20080301621A1

公开(公告)日：2008-12-04

申请号：US12129167

申请日：2008-05-29

申请人： Kazuya FUKUHARA ,  Tatsuhiko HIGASHIKI ,  Toshiya KOTANI ,  Satoshi TANAKA ,  Takashi SATO ,  Akiko MIMOTOGI ,  Masaki SATAKE

发明人： Kazuya FUKUHARA ,  Tatsuhiko HIGASHIKI ,  Toshiya KOTANI ,  Satoshi TANAKA ,  Takashi SATO ,  Akiko MIMOTOGI ,  Masaki SATAKE

IPC分类号： G06F17/50

CPC分类号： G03F1/36

摘要： In a model-based OPC which makes a suitable mask correction for each mask pattern using an optical image intensity simulator, a mask pattern is divided into subregions and the model of optical image intensity simulation is changed according to the contents of the pattern in each subregion. When the minimum dimensions of the mask pattern are smaller than a specific threshold value set near the exposure wavelength, the region is calculated using a high-accuracy model and the other regions are calculated using a high-speed model.

摘要翻译： 在基于模型的OPC中，使用光学图像强度模拟器对每个掩模图案进行适当的掩模校正，将掩模图案划分为子区域，并且根据每个子区域中的图案的内容来改变光学图像强度模拟模型 。 当掩模图案的最小尺寸小于在曝光波长附近设置的特定阈值时，使用高精度模型计算该区域，并且使用高速模型计算其它区域。

公开(公告)号：US20110068081A1

公开(公告)日：2011-03-24

申请号：US12884617

申请日：2010-09-17

申请人： Hiroyuki KASHIWAGI ,  Kazuya FUKUHARA

发明人： Hiroyuki KASHIWAGI ,  Kazuya FUKUHARA

IPC分类号： B29C35/08 ,  B29C59/02

CPC分类号： G03F7/0002 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/50 ,  G03F1/54 ,  G03F7/2014

摘要： According to one embodiment, a pattern forming method is disclosed. The method includes contacting a template with light curable resin on a substrate. The template comprises a concave-convex pattern including concave portions and convex portions, and a metal layer provided on a convex portion of the concave-convex pattern. The concave-convex pattern is to be contacted with the light curable resin. The pattern forming method further includes irradiating the light curable resin with light of a predetermined wavelength under a condition ε1=−2ε2. Where ε1 is a complex relative permittivity of the metal layer corresponding to the predetermined wavelength, ε2 is a complex relative permittivity of the light curable resin corresponding to the predetermined wavelength.

摘要翻译： 根据一个实施例，公开了一种图案形成方法。 该方法包括使模板与基材上的光固化树脂接触。 模板包括凹凸图案，其包括凹部和凸部，以及金属层，设置在凹凸图案的凸部上。 凹凸图案与光固化树脂接触。 图案形成方法还包括在条件1 = -2＆amp; 2的条件下用光可固化树脂照射预定波长的光。 其中，1是对应于预定波长的金属层的复相对介电常数，2是对应于预定波长的光固化树脂的复相对介电常数。

公开(公告)号：US20110032501A1

公开(公告)日：2011-02-10

申请号：US12830881

申请日：2010-07-06

申请人： Kazuya FUKUHARA ,  Masayuki HATANO ,  Takuya KONO

发明人： Kazuya FUKUHARA ,  Masayuki HATANO ,  Takuya KONO

IPC分类号： G03B27/54

CPC分类号： G03F7/70525 ,  G03F7/705

摘要： In one embodiment, an exposure apparatus is configured to irradiate a mask with illumination light and to irradiate a wafer with light from the mask irradiated with the illumination light. The apparatus includes an information acquisition unit configured to acquire use history information that is information regarding a use history of the mask. The apparatus further includes a condition derivation unit configured to derive a setting value or a change amount of an optical setting condition of the exposure apparatus, based on the acquired use history information and correspondence information that indicates a correspondence between the use history of the mask and the optical setting condition of the exposure apparatus. The apparatus further includes an exposure unit configured to set the optical setting condition of the exposure apparatus to an optical setting condition specified by the derived setting value or change amount, and to expose the wafer under the set optical setting condition.

摘要翻译： 在一个实施例中，曝光装置被配置为用照明光照射掩模，并且用来自照射照明光的掩模的光照射晶片。 该装置包括：信息获取单元，被配置为获取与掩模的使用历史有关的信息的使用历史信息。 该装置还包括条件导出单元，被配置为基于所获取的使用历史信息和对应信息来导出曝光装置的光学设置条件的设定值或变化量，该对应信息指示掩模的使用历史和 曝光装置的光学设定条件。 该装置还包括：曝光单元，被配置为将曝光装置的光学设置状态设置为由导出的设定值或变化量指定的光学设定条件，并在设定的光学设定条件下使晶片曝光。

公开(公告)号：US20100266960A1

公开(公告)日：2010-10-21

申请号：US12721310

申请日：2010-03-10

申请人： Hiromitsu MASHITA ,  Toshiya KOTANI ,  Michiya TAKIMOTO ,  Hidefumi MUKAI ,  Takafumi TAGUCHI ,  Kazuya FUKUHARA

发明人： Hiromitsu MASHITA ,  Toshiya KOTANI ,  Michiya TAKIMOTO ,  Hidefumi MUKAI ,  Takafumi TAGUCHI ,  Kazuya FUKUHARA

IPC分类号： G03F7/20 ,  G03B27/42

CPC分类号： G03B27/42 ,  G03F7/70525 ,  G03F7/70625

摘要： A method of manufacturing a semiconductor device according to an embodiment includes determining a second exposure parameter including exposure parameters except for an exposure amount from a dimension distribution information so that a resist pattern of a first resist pattern formed based on a second pattern has a desired dimension in a plurality of regions to be shot within a surface of a wafer.

摘要翻译： 根据实施例的制造半导体器件的方法包括从尺寸分布信息确定包括曝光量除外的曝光参数的第二曝光参数，使得基于第二图案形成的第一抗蚀剂图案的抗蚀剂图案具有期望的尺寸 在要在晶片表面内拍摄的多个区域中。

公开(公告)号：US20100225890A1

公开(公告)日：2010-09-09

申请号：US12564879

申请日：2009-09-22

申请人： Satoshi NAGAI ,  Kazuya FUKUHARA

发明人： Satoshi NAGAI ,  Kazuya FUKUHARA

IPC分类号： G01J1/10 ,  G03B27/54

CPC分类号： G03B27/54 ,  G03F7/70591 ,  G03F7/70941

摘要： A method for evaluating flare of an exposure tool has measuring a first reference integral exposure amount of illumination light emitted from the light source, and a unit reference integral exposure amount of illumination light emitted from the light source, the first reference integral exposure amount being required for the first evaluation pattern to be developed on the photosensitive film, the unit reference integral exposure amount being required for the first effective exposure region to be developed on the photosensitive film; calculating a first evaluation value by dividing the unit reference integral exposure amount by the first reference integral exposure amount; and evaluating a total flare amount of the illuminating optical system and the projecting optical system, using the first evaluation value.

摘要翻译： 用于评估曝光工具的光晕的方法具有测量从光源发射的照明光的第一参考积分曝光量和从光源发射的照明光的单位参考积分曝光量，需要第一参考积分曝光量 对于要在感光膜上显影的第一评估图案，要在感光膜上显影第一有效曝光区域所需的单位参考积分曝光量; 通过将单位参考积分曝光量除以第一参考积分曝光量来计算第一评估值; 以及使用所述第一评估值来评估所述照明光学系统和所述投影光学系统的总耀斑量。