公开(公告)号：US20130244141A1

公开(公告)日：2013-09-19

申请号：US13599152

申请日：2012-08-30

申请人： Kazuya FUKUHARA ,  Shingo Kanamitsu

发明人： Kazuya FUKUHARA ,  Shingo Kanamitsu

IPC分类号： G03F1/38 ,  G03F7/20

CPC分类号： G03F1/26 ,  G03F1/28

摘要： According to one embodiment, a photomask includes a mask substrate transparent to light, a light shielding pattern formed on the mask substrate, and a thin film portion that is provided at a part of the light shielding pattern and is thinned to have a higher light transmittance than the light shielding pattern, in which the thin film portion is arranged with respect to a light shielding pattern that is sensitive to a focus shift so that a sensitivity becomes stable and is not arranged with respect to a light shielding pattern whose sensitivity to a focus shift is stable.

摘要翻译： 根据一个实施例，光掩模包括对光透明的掩模基板，形成在掩模基板上的遮光图案，以及设置在遮光图案的一部分处的薄膜部分，并且被薄化以具有更高的透光率 其中薄膜部分相对于对聚焦偏移敏感的遮光图案设置，使得灵敏度变得稳定并且不对关于对焦点的敏感度的遮光图案设置的遮光图案 班次稳定。

公开(公告)号：US20130001753A1

公开(公告)日：2013-01-03

申请号：US13423043

申请日：2012-03-16

申请人： Shingo Kanamitsu ,  Masamitsu Itoh

发明人： Shingo Kanamitsu ,  Masamitsu Itoh

IPC分类号： H01L29/06 ,  H01L21/30

CPC分类号： G03F7/0002 ,  B82Y10/00 ,  B82Y40/00

摘要： According to one embodiment, a template substrate includes a substrate and a mask. The substrate includes a mesa region formed in a central portion of an upper surface of the substrate. The mesa region is configured to protrude more than a region of the substrate around the mesa region. An impurity is introduced into an upper layer portion of a partial region of a peripheral portion of the mesa region. The mask film is provided on the upper surface of the substrate.

摘要翻译： 根据一个实施例，模板衬底包括衬底和掩模。 衬底包括形成在衬底的上表面的中心部分中的台面区域。 所述台面区域被构造为在所述台面区域周围突出多于所述基板的区域。 杂质被引入到台面区域的周边部分的部分区域的上层部分中。 掩模膜设置在基板的上表面上。

公开(公告)号：US20100186768A1

公开(公告)日：2010-07-29

申请号：US12641066

申请日：2009-12-17

申请人： Shingo KANAMITSU

发明人： Shingo KANAMITSU

IPC分类号： C25F3/00 ,  B44C1/22

CPC分类号： G03F1/86 ,  G03F1/82 ,  G03F7/0002

摘要： A method for removing foreign matter attached to a photomask, includes: irradiating the foreign matter with an electron beam in an etching gas atmosphere in which the foreign matter or a bottom surface of the photomask is etched by irradiation with the electron beam; or irradiating the foreign matter with the electron beam in a deposition gas atmosphere in which a solid material is generated by irradiation with the electron beam to deposit the solid material on the foreign matter, and applying a force to the solid material with an AFM probe.

摘要翻译： 一种除去附着在光掩模上的异物的方法，包括：在蚀刻气体气氛中照射异物，通过照射电子束蚀刻光掩模的异物或底面; 或者在通过用电子束照射产生固体材料的沉积气体气氛中用电子束照射异物，以将固体材料沉积在异物上，并用AFM探针对固体材料施加力。

公开(公告)号：US20100051056A1

公开(公告)日：2010-03-04

申请号：US12548011

申请日：2009-08-26

申请人： Shingo KANAMITSU

发明人： Shingo KANAMITSU

IPC分类号： B08B7/00 ,  G06K9/00

CPC分类号： G03F7/0002 ,  G01Q80/00

摘要： A tip of a carbon nanotube is lowered toward a recess where a foreign object exists to cause the tip of the carbon nanotube to contact a bottom face of the recess. Subsequently, the carbon nanotube is further lowered to cause the carbon nanotube to sag, and a side face of the carbon nanotube is pressed against the bottom face of the recess. A force is applied to the foreign object by moving the carbon nanotube on the bottom face of the recess in a state where the side face is pressed against the bottom face of the recess.

摘要翻译： 碳纳米管的尖端朝向存在异物的凹部降低，导致碳纳米管的尖端与凹部的底面接触。 随后，进一步降低碳纳米管，导致碳纳米管下垂，并且碳纳米管的侧面压在凹部的底面上。 在侧面压靠凹部的底面的状态下，通过在凹部的底面上移动碳纳米管，向异物施加力。

公开(公告)号：US07094504B2

公开(公告)日：2006-08-22

申请号：US10668245

申请日：2003-09-24

申请人： Kyoko Izuha ,  Hideki Kanai ,  Soichi Inoue ,  Shingo Kanamitsu ,  Shinichi Ito

发明人： Kyoko Izuha ,  Hideki Kanai ,  Soichi Inoue ,  Shingo Kanamitsu ,  Shinichi Ito

IPC分类号： G01F9/00

CPC分类号： G03F1/30 ,  G03F1/32 ,  G03F7/70641 ,  G03F7/70683

摘要： Disclosed is a mask comprising a first area including a first surrounding area in which a halftone phase shift film or a stacked film of a halftone phase shift film and an opaque film is provided on a transparent substrate, and a first opening area surrounded by the first surrounding area, and a second area including a second surrounding area in which a halftone phase shift film is provided on the transparent substrate and a second opening area surrounded by the second surrounding area, wherein a transparent film is provided in at least a part of the second opening area, the transparent film being configured to give a predetermined phase difference to exposure light passing through that part of the second opening area in which the transparent film is provided relative to exposure light passing through the second surrounding area.

公开(公告)号：US06740456B2

公开(公告)日：2004-05-25

申请号：US10061327

申请日：2002-02-04

申请人： Shingo Kanamitsu

发明人： Shingo Kanamitsu

IPC分类号： G03F900

CPC分类号： G03F1/72 ,  G03F1/26

摘要： A method of correcting a photomask, comprises preparing a photomask substrate with a mask pattern including a phase shift pattern, forming a reference hole by removing a part of the mask pattern, applying an ion beam from an ion beam source to an area including the reference hole to allow secondary charged particles to be released from the reference hole, obtaining a position of the reference hole by detecting the secondary charged particles by a detector, calculating a positional relationship between the obtained position of the reference hole and a position of a defect of the mask pattern, and correcting the defect by applying an ion beam from the ion beam source to the defect, based on the calculated positional relationship, wherein a pattern of the reference hole, as viewed in a direction perpendicular to a top surface of the photomask substrate, is substantially rectangular, and a longitudinal direction of the rectangular pattern is parallel to a longitudinal direction of the phase shift pattern.

摘要翻译： 一种校正光掩模的方法，包括：制备具有包括相移图案的掩模图案的光掩模基板，通过去除一部分掩模图案形成参考孔，将来自离子束源的离子束施加到包括基准的区域 孔，以使二次带电粒子从参考孔释放，通过检测器检测二次带电粒子获得参考孔的位置，计算获得的基准孔位置与缺陷位置之间的位置关系 掩模图案，并且基于计算的位置关系，通过将来自离子束源的离子束施加到缺陷来校正缺陷，其中，在垂直于光掩模的顶表面的方向上观察参考孔的图案 衬底基本上是矩形的，并且矩形图案的纵向方向平行于该笔的纵向方向 e移位模式

公开(公告)号：US20110290134A1

公开(公告)日：2011-12-01

申请号：US13115758

申请日：2011-05-25

申请人： Masamitsu ITOH ,  Shingo Kanamitsu

发明人： Masamitsu ITOH ,  Shingo Kanamitsu

IPC分类号： B41N1/00 ,  B32B3/30 ,  H01L21/30 ,  G03F7/20

CPC分类号： H01L21/0274 ,  B29C59/022 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  Y10T428/24479

摘要： According to one embodiment, an imprint mask includes a quartz plate. The quartz plate has a plurality of concave sections formed in part of an upper surface on the quartz plate, and impurities are contained in a portion between the concave sections in the quartz plate.

摘要翻译： 根据一个实施例，压印掩模包括石英板。 石英板具有在石英板的上表面的一部分上形成的多个凹部，在石英板的凹部之间的部分含有杂质。

公开(公告)号：US20100112464A1

公开(公告)日：2010-05-06

申请号：US12556779

申请日：2009-09-10

申请人： Shingo KANAMITSU

发明人： Shingo KANAMITSU

IPC分类号： G03F1/00 ,  G03F7/20

CPC分类号： G03F1/74 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/24

摘要： According to an aspect of the present invention, there is provided a method for correcting a defect in an EUV mask, the method including: preparing an EUV mask including an absorption layer and an anti-reflection layer forming a pattern; recognizing a defect region in the pattern; defining a first region and a second region on the defect region, the second region extending from a desired pattern edge by a given distance, the first region being defined on the rest; removing the first region of the anti-reflection layer and the absorption layer by irradiating a beam in a first atmosphere; removing the second region of the anti-reflection layer and the absorption layer by irradiating the beam in a second atmosphere; and oxidizing an exposed side surface of the desired pattern edge of the absorption layer.

摘要翻译： 根据本发明的一个方面，提供了一种用于校正EUV掩模中的缺陷的方法，所述方法包括：制备包括吸收层和形成图案的抗反射层的EUV掩模; 识别图案中的缺陷区域; 限定所述缺陷区域上的第一区域和第二区域，所述第二区域从期望的图案边缘延伸给定的距离，所述第一区域被限定在其余部分上; 通过在第一气氛中照射光束来去除抗反射层的第一区域和吸收层; 通过在第二气氛中照射光束来去除抗反射层和吸收层的第二区域; 以及氧化所述吸收层的所需图案边缘的暴露侧表面。

公开(公告)号：US08778572B2

公开(公告)日：2014-07-15

申请号：US13599152

申请日：2012-08-30

申请人： Kazuya Fukuhara ,  Shingo Kanamitsu

发明人： Kazuya Fukuhara ,  Shingo Kanamitsu

IPC分类号： G03F1/32

CPC分类号： G03F1/26 ,  G03F1/28

摘要： According to one embodiment, a photomask includes a mask substrate transparent to light, a light shielding pattern formed on the mask substrate, and a thin film portion that is provided at a part of the light shielding pattern and is thinned to have a higher light transmittance than the light shielding pattern, in which the thin film portion is arranged with respect to a light shielding pattern that is sensitive to a focus shift so that a sensitivity becomes stable and is not arranged with respect to a light shielding pattern whose sensitivity to a focus shift is stable.

摘要翻译： 根据一个实施例，光掩模包括对光透明的掩模基板，形成在掩模基板上的遮光图案，以及设置在遮光图案的一部分处的薄膜部分，并且被薄化以具有更高的透光率 其中薄膜部分相对于对聚焦偏移敏感的遮光图案设置，使得灵敏度变得稳定并且不对关于对焦点的敏感度的遮光图案设置的遮光图案 班次稳定。

公开(公告)号：US08758005B2

公开(公告)日：2014-06-24

申请号：US13115758

申请日：2011-05-25

申请人： Masamitsu Itoh ,  Shingo Kanamitsu

发明人： Masamitsu Itoh ,  Shingo Kanamitsu

IPC分类号： B29C59/16

CPC分类号： H01L21/0274 ,  B29C59/022 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  Y10T428/24479

摘要： According to one embodiment, an imprint mask includes a quartz plate. The quartz plate has a plurality of concave sections formed in part of an upper surface on the quartz plate, and impurities are contained in a portion between the concave sections in the quartz plate.

摘要翻译： 根据一个实施例，压印掩模包括石英板。 石英板具有在石英板的上表面的一部分上形成的多个凹部，在石英板的凹部之间的部分含有杂质。