Abstract:
An apparatus which projects a pattern of an original onto a substrate by a projection optical system within a chamber to expose the substrate, comprises a measurement unit which performs measurement to calculate a deformation amount of the original, and a controller which calculates a predicted deformation amount of the original and corrects a projection magnification of the projection optical system so as to correct the predicted deformation amount, based on information representing a relationship between the deformation amount with reference to a shape of the original at a certain temperature and a time for which the original receives exposure light, a deformation amount of the original before exposure determined based on a measurement value obtained by measuring, by the measurement unit, the deformation amount of the original loaded into the chamber and unused for exposure, and the time for which the original receives the exposure light.
Abstract:
A 3D photographic printer uses a monochrome panel for displaying two or more images for composing a 3D photograph. Each image has a plurality of color image components. A light source with selectable color light components is used to illuminate the monochrome panel corresponding to the displayed color image components. The images are displayed at different locations so that these images can be projected onto a 3D print material through a projection lens at different projection angles. With the digital display device, it is possible to electronically locate the images at different locations and shift the images or mechanically moving the display device during the 3D photographic composing process. It is also possible that only the print material is mechanically shifted to different locations. The display device and the projection lens can be stationary.
Abstract:
The invention relates to a method for analyzing a defect of a photolithographic mask for an extreme ultraviolet (EUV) wavelength range (EUV mask) comprising the steps of: (a) generating at least one focus stack relating to the defect using an EUV mask inspection tool, (b) determining a surface configuration of the EUV mask at a position of the defect, (c) providing model structures having the determined surface configuration which have different phase errors and generating the respective focus stacks, and (d) determining a three dimensional error structure of the EUV mask defect by comparing the at least one generated focus stack of the defect and the generated focus stacks of the model structures.
Abstract:
An image display apparatus improves usability for a user in the case where a screen image is projected on a ceiling as a screen. The image display apparatus includes: a projection unit capable of vertically changing a projection angle; a projection angle detector detecting the projection angle of the projection unit; and a screen image corrector reversing a projected screen image. The screen image corrector switches the projected screen image from a reversed display to a standard display when the projection angle detected by the projection angle detector is less than or equal to a predetermined value.
Abstract:
An exposure apparatus is configured to expose a pattern of an original on a substrate by using light from a light source. The exposure apparatus includes an illumination optical system configured to illuminate the original by polarized light by using the light from the light source, and a correction unit configured to correct misalignment of the optical axis of the light from the light source and the optical axis of the illumination optical system. The correction unit includes a first lens and a deflecting member, the first lens can move in a direction perpendicular to an optical axis of the lens, and a deflecting direction of the light deflected by the deflecting member is variable.
Abstract:
An apparatus and method for the simultaneous determination of focus and source boresighting error for photolithographic steppers and scanners is described. A reticle containing custom arrays of box-in-box test structures specifically designed for performing source or exit pupil division using an aperture plate is exposed onto a resist coated wafer several times. The resulting exposure patterns are measured with a conventional overlay tool. The overlay data is processed with a slope-shift algorithm for the simultaneous determination of both focus and source telecentricity as a function of field position. Additionally, methods for ameliorating metrology induced effects and methods for producing precision Bossung curves are also described. This Abstract is provided for the sole purpose of complying with the Abstract requirement rules, it shall not be used to interpret or to limit the scope or the meaning of the claims.
Abstract:
An apparatus which projects a pattern of an original onto a substrate by a projection optical system within a chamber to expose the substrate, comprises a measurement unit which performs measurement to calculate a deformation amount of the original, and a controller which calculates a predicted deformation amount of the original and corrects a projection magnification of the projection optical system so as to correct the predicted deformation amount, based on information representing a relationship between the deformation amount with reference to a shape of the original at a certain temperature and a time for which the original receives exposure light, a deformation amount of the original before exposure determined based on a measurement value obtained by measuring, by the measurement unit, the deformation amount of the original loaded into the chamber and unused for exposure, and the time for which the original receives the exposure light.
Abstract:
Method and apparatus are provided for automated determination and adjustment of height and tilt of a substrate surface within a lithography system. The method includes: directing a beam of light onto the substrate surface, which reflects off the substrate surface as a reflected beam; optically splitting the reflected beam into a first reflected beam portion and a second reflected beam portion; impinging the first reflected beam portion onto a first detector plane of a first optical detector to generate intensity data, and impinging the second reflected beam portion onto a second detector plane of a second optical detector to generate intensity data, and utilizing the generated data in determining height and tilt of the substrate surface relative to a nominal writing plane of the lithography system. Responsive to the determination, focus or tilt of the system's writing beam, or position of the substrate surface within the system, is adjusted.
Abstract:
Embodiments of the invention relate to a method for determining exposure settings for a target field on a substrate in a lithographic exposure process, including providing calibration data by determining the position of a calibration field in a first direction at a plurality of calibration positions in a second and third direction relative to the position of the calibration field. The method also includes providing production data by establishing the position on the substrate of the target field in the second and third direction and by measuring the position of the exposure field in the first direction at least one measurement position relative to the position of the exposure field in the second and third direction.
Abstract:
An embodiment relates generally to an apparatus for reducing defects. The apparatus includes a spindle adapted to hold a wafer; and at least two light sources configured to direct light to a top-side and a back-side of the wafer