发明申请
- 专利标题: MASK PATTERN CORRECTING METHOD
- 专利标题(中): 掩模图校正方法
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申请号: US12129167申请日: 2008-05-29
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公开(公告)号: US20080301621A1公开(公告)日: 2008-12-04
- 发明人: Kazuya FUKUHARA , Tatsuhiko HIGASHIKI , Toshiya KOTANI , Satoshi TANAKA , Takashi SATO , Akiko MIMOTOGI , Masaki SATAKE
- 申请人: Kazuya FUKUHARA , Tatsuhiko HIGASHIKI , Toshiya KOTANI , Satoshi TANAKA , Takashi SATO , Akiko MIMOTOGI , Masaki SATAKE
- 优先权: JP2007-145828 20070531
- 主分类号: G06F17/50
- IPC分类号: G06F17/50
摘要:
In a model-based OPC which makes a suitable mask correction for each mask pattern using an optical image intensity simulator, a mask pattern is divided into subregions and the model of optical image intensity simulation is changed according to the contents of the pattern in each subregion. When the minimum dimensions of the mask pattern are smaller than a specific threshold value set near the exposure wavelength, the region is calculated using a high-accuracy model and the other regions are calculated using a high-speed model.
公开/授权文献
- US08122385B2 Mask pattern correcting method 公开/授权日:2012-02-21
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