ADDITIVELY MANUFACTURED STRUCTURES FOR HEAT DISSIPATION FROM INTEGRATED CIRCUIT DEVICES

    公开(公告)号:US20210407884A1

    公开(公告)日:2021-12-30

    申请号:US16912432

    申请日:2020-06-25

    申请人: Intel Corporation

    摘要: An integrated circuit assembly may be fabricated to include an integrated circuit device having a backside surface and a backside metallization layer on the backside surface of the integrated circuit device, wherein the backside metallization layer comprises a bond layer on the backside surface of the integrated circuit device, a high thermal conductivity layer on the bond layer, and a cap layer on the high thermal conductivity layer. The bond layer may be a layered stack comprising an adhesion promotion layer on the backside of the integrated circuit device and at one least metal layer. The high thermal conductivity layer may be an additively deposited material having a thermal conductivity greater than silicon, such as copper, silver, aluminum, diamond, silicon carbide, boron nitride, aluminum nitride, and combinations thereof.