HEAT INSULATING INTERCONNECT FEATURES IN A COMPONENT OF A COMPOSITE IC DEVICE STRUCTURE

    公开(公告)号:US20220415853A1

    公开(公告)日:2022-12-29

    申请号:US17358948

    申请日:2021-06-25

    申请人: Intel Corporation

    摘要: A composite integrated circuit (IC) structure includes at least a first IC die in a stack with a second IC die. Each die has a device layer and metallization layers interconnected to transistors of the device layer and terminating at features. First features of the first IC die are primarily of a first composition with a first microstructure. Second features of the second IC die are primarily of a second composition or a second microstructure. A first one of the second features is in direct contact with one of the first features. The second composition has a thermal conductivity at least an order of magnitude lower than that of the first composition and first microstructure. The first composition may have a thermal conductivity at least 40 times that of the second composition or second microstructure.