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    LAYER STRUCTURES FOR MAKING DIRECT METAL-TO-METAL BONDS AT LOW TEMPERATURES IN MICROELECTRONICS
    1.
    发明申请
    LAYER STRUCTURES FOR MAKING DIRECT METAL-TO-METAL BONDS AT LOW TEMPERATURES IN MICROELECTRONICS 有权

    公开(公告)号：US20220005784A1

    公开(公告)日：2022-01-06

    申请号：US17320767

    申请日：2021-05-14

    Applicant: INVENSAS BONDING TECHNOLOGIES, INC.

    Inventor： Guilian Gao ,  Gaius Gillman Fountain, JR. ,  Laura Wills Mirkarimi ,  Rajesh Katkar ,  Ilyas Mohammed ,  Cyprian Emeka Uzoh

    IPC: H01L23/00 ,  H01L23/522 ,  H01L21/768

    Abstract: Layer structures for making direct metal-to-metal bonds at low temperatures and shorter annealing durations in microelectronics are provided. Example bonding interface structures enable direct metal-to-metal bonding of interconnects at low annealing temperatures of 150° C. or below, and at a lower energy budget. The example structures provide a precise metal recess distance for conductive pads and vias being bonded that can be achieved in high volume manufacturing. The example structures provide a vertical stack of conductive layers under the bonding interface, with geometries and thermal expansion features designed to vertically expand the stack at lower temperatures over the precise recess distance to make the direct metal-to-metal bonds. Further enhancements, such as surface nanotexture and copper crystal plane selection, can further actuate the direct metal-to-metal bonding at lowered annealing temperatures and shorter annealing durations.

    Bonded structures without intervening adhesive
    7.
    发明授权
    Bonded structures without intervening adhesive 有权

    公开(公告)号：US11476213B2

    公开(公告)日：2022-10-18

    申请号：US16741575

    申请日：2020-01-13

    Applicant: INVENSAS BONDING TECHNOLOGIES, INC.

    Inventor： Belgacem Haba ,  Rajesh Katkar ,  Ilyas Mohammed ,  Javier A. DeLaCruz

    IPC: H01L23/00 ,  H01L21/78

    Abstract: A bonded structure can include a first reconstituted element comprising a first element and having a first side comprising a first bonding surface and a second side opposite the first side. The first reconstituted element can comprise a first protective material disposed about a first sidewall surface of the first element. The bonded structure can comprise a second reconstituted element comprising a second element and having a first side comprising a second bonding surface and a second side opposite the first side. The first reconstituted element can comprise a second protective material disposed about a second sidewall surface of the second element. The second bonding surface of the first side of the second reconstituted element can be directly bonded to the first bonding surface of the first side of the first reconstituted element without an intervening adhesive along a bonding interface.

    BONDED STRUCTURES WITHOUT INTERVENING ADHESIVE
    8.
    发明申请
    BONDED STRUCTURES WITHOUT INTERVENING ADHESIVE 有权

    公开(公告)号：US20220199560A1

    公开(公告)日：2022-06-23

    申请号：US17563506

    申请日：2021-12-28

    Applicant: INVENSAS BONDING TECHNOLOGIES, INC.

    Inventor： Belgacem Haba ,  Rajesh Katkar ,  Ilyas Mohammed ,  Javier A. DeLaCruz

    IPC: H01L23/00 ,  H01L21/78

    Abstract: A bonded structure can include a first reconstituted element comprising a first element and having a first side comprising a first bonding surface and a second side opposite the first side. The first reconstituted element can comprise a first protective material disposed about a first sidewall surface of the first element. The bonded structure can comprise a second reconstituted element comprising a second element and having a first side comprising a second bonding surface and a second side opposite the first side. The first reconstituted element can comprise a second protective material disposed about a second sidewall surface of the second element. The second bonding surface of the first side of the second reconstituted element can be directly bonded to the first bonding surface of the first side of the first reconstituted element without an intervening adhesive along a bonding interface.

    Probe methodology for ultrafine pitch interconnects
    9.
    发明授权
    Probe methodology for ultrafine pitch interconnects 有权

    公开(公告)号：US10748824B2

    公开(公告)日：2020-08-18

    申请号：US16701606

    申请日：2019-12-03

    Applicant: Invensas Bonding Technologies, Inc.

    Inventor： Javier A. Delacruz ,  Paul M. Enquist ,  Gaius Gillman Fountain, Jr. ,  Ilyas Mohammed

    IPC: H01L21/66 ,  H01L23/00

    Abstract: Representative implementations of devices and techniques provide a temporary access point (e.g., for testing, programming, etc.) for a targeted interconnect located among multiple finely spaced interconnects on a surface of a microelectronic component. One or more sacrificial layers are disposed on the surface of the microelectronic component, overlaying the multiple interconnects. An insulating layer is disposed between a conductive layer and the surface, and includes a conductive via through the insulating layer that electrically couples the conductive layer to the target interconnect. The sacrificial layers are configured to be removed after the target interconnect has been accessed, without damaging the surface of the microelectronic component.

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