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公开(公告)号：US20230177363A1
公开(公告)日：2023-06-08
申请号：US17457445
申请日：2021-12-03
发明人： JING LI , Jian Wang , JIAN MIN JIANG , Zi Ming Huang , Zhen Zhang , WANQING LIU
IPC分类号： G06N5/04 , G06N5/02 , G06F40/295
CPC分类号： G06N5/04 , G06N5/02 , G06F40/295
摘要： A processor obtains a pair including a question and an answer in natural language; determines at least one entity in the question and an entity type of each of the at least one entity consistent with the schema of a knowledge graph (KG); identifies a subset of candidate query templates based on the entity type of each of the at least one entity, wherein the candidate query templates are generated based on the schema of the KG; composes a set of queries by populating the at least one entity into each of the subset of candidate query templates; executes the set of queries on the KG to generate respective answers; identifies a first answer from the respective answers that is matching with the answer in the pair; and determines a candidate query template, from the subset of candidate query templates, corresponding to the first answer as a query template.
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公开(公告)号：US11379320B2
公开(公告)日：2022-07-05
申请号：US16923233
申请日：2020-07-08
发明人： Ping Xiao , Xin Zhou , Cheng Cheng Dong , Yu Long Tong , Zhen Zhang
摘要： A processor initiates a run of a target container in a distributed computing environment. A processor detects at least one error occurring during the initiation of the target container. A processor determines at least one fix image based on the at least one error. A processor performs an error recovery of the target container based on the at least one fix image. A processor runs, in response to successfully performing the error recovery of the target container, the target container in the distributed computing environment.
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公开(公告)号：US20190288146A1
公开(公告)日：2019-09-19
申请号：US16429568
申请日：2019-06-03
发明人： Joel P. De Souza , Harold John Hovel , Daniel Inns , Jeehwan Kim , Christian Lavoie , Devendra K. Sadana , Katherine L. Saenger , Davood Shahrjerdi , Zhen Zhang
IPC分类号： H01L31/068 , H01L31/18 , H01L31/0224
摘要： A solar cell having n-type and p-type interdigitated back contacts (IBCs), which cover the entire back surface of the absorber layer. The spatial separation of the IBCs is in a direction perpendicular to the back surface, thus providing borderless contacts having a zero-footprint separation. As the contacts are on the back, photons incident on the cell's front surface can be absorbed without any shadowing.
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公开(公告)号：US20160365473A1
公开(公告)日：2016-12-15
申请号：US15246649
申请日：2016-08-25
发明人： Qing Cao , Kangguo Cheng , Zhengwen Li , Fei Liu , Zhen Zhang
IPC分类号： H01L31/18
CPC分类号： H01L31/1868 , H01L31/02167 , H01L31/02168 , H01L31/022425 , H01L31/0392 , H01L31/062 , H01L31/075 , H01L31/1864 , Y02E10/50
摘要： The present invention relates generally to a photovoltaic solar cell device and more particularly, to a structure and method of inducing charge inversion in a silicon substrate by using a highly charged passivation layer on an upper side of the silicon substrate. A positively charged passivation layer comprising hafnium oxide may be formed on an insulating layer covering an upper surface of a p-doped silicon substrate and on a metal contact to induce a strong inversion layer in an upper portion of the p-doped silicon substrate.
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5.发明申请MIS-IL SILICON SOLAR CELL WITH PASSIVATION LAYER TO INDUCE SURFACE INVERSION 审中-公开MIS-IL硅太阳能电池与钝化层诱导表面反转公开(公告)号：US20160359073A1
公开(公告)日：2016-12-08
申请号：US15244077
申请日：2016-08-23
发明人： Qing Cao , Kangguo Cheng , Zhengwen Li , Fei Liu , Zhen Zhang
IPC分类号： H01L31/075 , H01L31/0392 , H01L31/0224
CPC分类号： H01L31/1868 , H01L31/02167 , H01L31/02168 , H01L31/022425 , H01L31/0392 , H01L31/062 , H01L31/075 , H01L31/1864 , Y02E10/50
摘要： The present invention relates generally to a photovoltaic solar cell device and more particularly, to a structure and method of inducing charge inversion in a silicon substrate by using a highly charged passivation layer on an upper side of the silicon substrate. A positively charged passivation layer comprising hafnium oxide may be formed on an insulating layer covering an upper surface of a p-doped silicon substrate and on a metal contact to induce a strong inversion layer in an upper portion of the p-doped silicon substrate.
摘要翻译： 本发明一般涉及光伏太阳能电池器件，更具体地说，涉及通过在硅衬底的上侧使用高电荷的钝化层来在硅衬底中感应电荷反转的结构和方法。 可以在覆盖p掺杂硅衬底的上表面和金属接触的绝缘层上形成包含氧化铪的带正电荷的钝化层，以在p掺杂硅衬底的上部中诱发强反转层。
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公开(公告)号：US20160349207A1
公开(公告)日：2016-12-01
申请号：US14725067
申请日：2015-05-29
发明人： Qing Cao , Kangguo Cheng , Zhengwen Li , Fei Liu , Zhen Zhang
IPC分类号： G01N27/414
CPC分类号： G01N27/44791 , G01N27/4146 , G01N33/48707 , H01L21/02236 , H01L21/3065 , H01L21/31116
摘要： A sensor includes a semiconductor substrate having first pointed nodes extending into a channel from a first side of the channel. Second pointed nodes extend into the channel from a second side of the channel, which is opposite the first side. The second pointed nodes being self-aligned to the first pointed nodes on the opposite side of the channel. The first pointed nodes and the second pointed nodes are connected to a circuit to detect particles in the channel.
摘要翻译： 传感器包括具有从通道的第一侧延伸到通道中的第一尖端节点的半导体衬底。 第二个尖的节点从与第一侧相对的通道的第二侧延伸到通道中。 第二个被指向的节点与通道相对侧上的第一个指向的节点自对准。 第一个被指向的节点和第二个被指向的节点被连接到电路以检测信道中的粒子。
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7.发明授权Transistor devices with tapered suspended vertical arrays of carbon nanotubes 有权具有锥形悬浮垂直阵列碳纳米管的晶体管器件公开(公告)号：US09502673B2
公开(公告)日：2016-11-22
申请号：US14674339
申请日：2015-03-31
发明人： Qing Cao , Kangguo Cheng , Zhengwen Li , Fei Liu , Zhen Zhang
IPC分类号： H01L27/088 , H01L31/109 , H01L21/336 , H01L51/05 , H01L51/00
CPC分类号： H01L51/055 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L27/283 , H01L51/0048 , H01L51/0525 , H01L51/0541 , H01L51/0558 , H01L51/0566 , H01L51/057 , H01L51/105 , H01L2251/303 , Y10S977/742 , Y10S977/842 , Y10S977/938
摘要： A transistor device includes an array of fin structures arranged on a substrate, each of the fin structures being vertically alternating stacks of a first isoelectric point material having a first isoelectric point and a second isoelectric point material having a second isoelectric point that is different than the first isoelectric point; one or more carbon nanotubes (CNTs) suspended between the fin structures and contacting a side surface of the second isoelectric point material in the fin structures; a gate wrapped around the array of CNTs; and source and drain contacts arranged over the fin structures; wherein each of the fin structures have a trapezoid shape or parallel sides that are oriented about 90° with respect to the substrate.
摘要翻译： 晶体管器件包括布置在衬底上的翅片结构的阵列，每个翅片结构是具有第一等电点的第一等电点材料和具有不同于第一等电点材料的第二等电点材料的第二等电点材料的垂直交替堆叠 第一等电点; 一个或多个碳纳米管（CNT），其悬挂在翅片结构之间并与翅片结构中的第二等电点材料的侧表面接触; 围绕CNT阵列的门; 以及布置在鳍结构上的源极和漏极触点; 其中每个翅片结构具有相对于基底定向成大约90°的梯形或平行边。
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8.发明授权MIS-IL silicon solar cell with passivation layer to induce surface inversion 有权具有钝化层的MIS-IL硅太阳能电池诱发表面反转公开(公告)号：US09466755B2
公开(公告)日：2016-10-11
申请号：US14528517
申请日：2014-10-30
发明人： Qing Cao , Kangguo Cheng , Zhengwen Li , Fei Liu , Zhen Zhang
IPC分类号： H01L31/18 , H01L31/0216 , H01L31/062 , H01L31/0224
CPC分类号： H01L31/1868 , H01L31/02167 , H01L31/02168 , H01L31/022425 , H01L31/0392 , H01L31/062 , H01L31/075 , H01L31/1864 , Y02E10/50
摘要： The present invention relates generally to a photovoltaic solar cell device and more particularly, to a structure and method of inducing charge inversion in a silicon substrate by using a highly charged passivation layer on an upper side of the silicon substrate. A positively charged passivation layer comprising hafnium oxide may be formed on an insulating layer covering an upper surface of a p-doped silicon substrate and on a metal contact to induce a strong inversion layer in an upper portion of the p-doped silicon substrate.
摘要翻译： 本发明一般涉及光伏太阳能电池器件，更具体地说，涉及通过在硅衬底的上侧使用高电荷的钝化层来在硅衬底中感应电荷反转的结构和方法。 可以在覆盖p掺杂硅衬底的上表面和金属接触的绝缘层上形成包含氧化铪的带正电荷的钝化层，以在p掺杂硅衬底的上部中诱发强反转层。
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公开(公告)号：US09373702B2
公开(公告)日：2016-06-21
申请号：US14485127
申请日：2014-09-12
发明人： Zhengwen Li , Qing Cao , Kangguo Cheng , Fei Liu , Zhen Zhang
IPC分类号： H01L21/336 , H01L29/66 , H01L29/08 , H01L21/8238 , H01L21/84 , H01L27/12 , H01L21/311 , H01L21/02 , H01L29/45 , H01L21/285 , H01L21/768
CPC分类号： H01L29/66795 , H01L21/02532 , H01L21/02636 , H01L21/28518 , H01L21/31116 , H01L21/76805 , H01L21/76816 , H01L21/76855 , H01L21/823814 , H01L21/823821 , H01L21/82385 , H01L21/823871 , H01L21/84 , H01L21/845 , H01L27/1203 , H01L27/1211 , H01L29/0847 , H01L29/458 , H01L29/665 , H01L29/66545 , H01L29/66628
摘要： After formation of a disposable gate structure, a raised active semiconductor region includes a vertical stack, from bottom to top, of an electrical-dopant-doped semiconductor material portion and a carbon-doped semiconductor material portion. A planarization dielectric layer is deposited over the raised active semiconductor region, and the disposable gate structure is replaced with a replacement gate structure. A contact via cavity is formed through the planarization dielectric material layer by an anisotropic etch process that employs a fluorocarbon gas as an etchant. The carbon in the carbon-doped semiconductor material portion retards the anisotropic etch process, and the carbon-doped semiconductor material portion functions as a stopping layer for the anisotropic etch process, thereby making the depth of the contact via cavity less dependent on variations on the thickness of the planarization dielectric layer or pattern factors.
摘要翻译： 在形成一次性栅极结构之后，凸起的有源半导体区域包括从掺杂剂掺杂的半导体材料部分和碳掺杂半导体材料部分的从底部到顶部的垂直堆叠。 在凸起的有源半导体区域上沉积平坦化电介质层，并且用替代栅极结构替换一次性栅极结构。 通过使用氟碳气体作为蚀刻剂的各向异性蚀刻工艺，通过平坦化介电材料层形成接触孔。 碳掺杂半导体材料部分中的碳延迟了各向异性蚀刻工艺，并且碳掺杂半导体材料部分用作用于各向异性蚀刻工艺的停止层，从而使接触通孔的深度较小地依赖于 平坦化介电层的厚度或图案因素。
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公开(公告)号：US20160126405A1
公开(公告)日：2016-05-05
申请号：US14528517
申请日：2014-10-30
发明人： Qing Cao , Kangguo Cheng , Zhengwen Li , Fei Liu , Zhen Zhang
IPC分类号： H01L31/18 , H01L31/062 , H01L31/0224 , H01L31/0216
CPC分类号： H01L31/1868 , H01L31/02167 , H01L31/02168 , H01L31/022425 , H01L31/0392 , H01L31/062 , H01L31/075 , H01L31/1864 , Y02E10/50
摘要： The present invention relates generally to a photovoltaic solar cell device and more particularly, to a structure and method of inducing charge inversion in a silicon substrate by using a highly charged passivation layer on an upper side of the silicon substrate. A positively charged passivation layer comprising hafnium oxide may be formed on an insulating layer covering an upper surface of a p-doped silicon substrate and on a metal contact to induce a strong inversion layer in an upper portion of the p-doped silicon substrate.
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