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1.发明授权Method of covering the surfaces of objects with protective glass jackets and the objects produced thereby 失效用保护性玻璃外套和由此产生的物体覆盖物体的表面的方法
公开(公告)号：US3300339A
公开(公告)日：1967-01-24
申请号：US24853062
申请日：1962-12-31
申请人： IBM
发明人： PERRI JOHN A , JACOB RISEMAN , RUGGLES JR RUDY L
CPC分类号： C23C14/088 , C23C14/10 , C23C14/58 , C23C14/5806 , C23D5/00 , H01L23/291 , H01L23/485 , H01L2924/0002 , Y10S148/028 , Y10S148/043 , H01L2924/00
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2.发明授权Junction transistor using a thin layer of semiconductor material of a diffusion-proof substrate 失效使用扩散掩模的半导体材料薄层的结晶体晶体管
公开(公告)号：US3623923A
公开(公告)日：1971-11-30
申请号：US3623923D
申请日：1968-09-03
申请人： IBM
发明人： KENNEDY DAVID P , PERRI JOHN A , RISEMAN JACOB
IPC分类号： H01L29/73 , A47B61/04 , H01L21/00 , H01L21/22 , H01L21/331 , H01L27/00 , B01J17/00 , H01L3/00 , H01L7/00
CPC分类号： H01L21/22 , A47B61/04 , H01L21/00 , H01L27/00 , Y10S148/035 , Y10S148/085 , Y10S148/106 , Y10S148/15 , Y10S148/167
摘要： PLANAR TRANSISTOR HAVING REDUCED JUNCTION AREA FOR SMALL CAPACITANCE. A THIN LAYER OF SEMICONDUCTOR MATERIAL IS PLACED ON A SUBSTRATE MATERIAL WHICH IS NEARLY IMPENETRABLE BARRIER AGAINST DIFFUSION BY NORMALLY USED IMPURITY ATOMS. THE DEPTH OF THE JUNCTION IS LIMITED TO APPROXIMATELY THE THICKNESS OF THE THIN LAYER OF SEMICONDUCTOR MATERIAL, THUS LIMITING THE JUNCTION AREA AND CAPACTANCE.
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公开(公告)号：US3415680A
公开(公告)日：1968-12-10
申请号：US55358365
申请日：1965-12-20
申请人： IBM
发明人： PERRI JOHN A , JACOB RISEMAN
IPC分类号： C03C3/072 , C03C3/102 , C03C3/108 , C03C4/00 , C03C17/10 , C23C8/80 , H01L21/00 , H01L21/316 , H01L23/29 , H01L29/00
CPC分类号： H01L21/00 , C03C3/072 , C03C3/102 , C03C3/108 , C03C4/00 , C03C17/10 , C23C8/80 , H01L21/316 , H01L23/291 , H01L29/00 , H01L2924/0002 , Y10T428/24967 , H01L2924/00
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4.发明授权Decal connectors and methods of forming decal connections to solid state devices 失效形成连接到固态装置的分解连接器和方法
公开(公告)号：US3614832A
公开(公告)日：1971-10-26
申请号：US3614832D
申请日：1966-03-09
申请人： IBM
发明人： CHANCE DUDLEY A , IM SAMUEL S , PERRI JOHN A , RISEMAN JACOB
CPC分类号： B23K1/0056 , B23K2201/38 , H01L24/24 , H01L24/82 , H01L29/12 , H01L2224/2402 , H01L2224/24227 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01043 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/09701 , H01L2924/12042 , H01L2924/14 , H01L2924/15153 , H01L2924/15165 , Y10T29/49128 , Y10T29/49155 , H01L2924/00
摘要： A PLURALITY OF CONNECTIONS FROM ELECTRICALLY CONDUCTIVE LANDS ON AN INSULATING SUBSTRATE TO THE CONTACTS OF A SOLID STATE DEVICE ARE FORMED IN ONE OPERATION BY FIXEDLY POSITIONING THE DEVICE ON, OR IN A CAVITY WITHIN, THE SUBSTRATE. A DECAL, INCLUDING A BACKING PLATE WITH A PLURALITY OF CONDUCTIVE STRIPS WHICH CAN BE ADHERED TO THE PLATE BY MEANS OF A SOLUBLE ADHESIVE, IS POSITIONED OVER THE DEVICE BEARING SUBSTRATE WITH THE STRIPS IN REGISTRY WITH RESPECTIVE CONTACTS AND LANDS. THE STRIPS ARE BROUGHT INTO CONTACT WITH RESPECTIVE CONTACT AND LAND SURFACE PORTIONS AND SUBJECTED TO HEAT AND PRESSURE SUFFICIENT TO CAUSE BONDING THEREBETWEEN. THEREAFTER, THE DECAL BACKING PLATE MAY BE REMOVED FROM THE STRIPS, AS BY DISSOLVING THE ADHESIVE, LEAVING THE STRIPS FIRMLY BONDED TO THE CONTACTS AND LANDS AND BRIDGING THE SPACE THEREBETWEEN, WHEREBY THE LANDS ARE CONNECTED TO THE CONTACTS THROUGH THE STRIPS.
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公开(公告)号：US3574680A
公开(公告)日：1971-04-13
申请号：US3574680D
申请日：1968-05-07
申请人： IBM
发明人： PERRI JOHN A , RISEMAN JACOB
IPC分类号： A63H18/08 , C23C14/00 , C23C16/00 , H01H11/04 , H01L21/00 , H01L21/24 , H01L21/28 , H01L21/283 , H01L21/285 , C23C11/02 , H01K7/00
CPC分类号： H01L21/283 , C23C14/00 , C23C16/00 , H01H11/04 , H01L21/00 , H01L21/24 , H01L21/28 , H01L21/285 , Y10T428/24917
摘要： A METHOD OF FORMING AN OHMIC CONTACT UPON AN AREA TO BE CONTACTED UPON A SUBSTRATE, SUCH AS AN ACTIVE AREA UPON A SEMICONDUCTOR DEVICE, COMPRISING THE STEPS OF DEPOSITING FROM THE VAPOR PHASE A METAL TO BE DEPOSITED, WHILE SAID AREA IS MAINTAINED AT A FIRST TEMPERATURE AT WHICH GOOD ADHESION BETWEEN SAID AREA AND SAID METAL OCCURS; THEN COMPLETING THE DEPOSITION AT A SECOND LOWER TEMPERATURE, FOR A TIME DURING WHICH NO CONTACT-IMPAIRING REACTIONS MAY OCCUR BETWEEN SAID METAL AND SAID AREA; THEN COOLING THE AREA. EXAMPLES OF GIVEN MATERIALS AND TEMPERATURES ARE INCLUDED.
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公开(公告)号：US3546013A
公开(公告)日：1970-12-08
申请号：US3546013D
申请日：1968-09-18
申请人： IBM
发明人： PERRI JOHN A , RISEMAN JACOB
IPC分类号： C23C8/80 , H01L23/29 , H01L23/31 , H01L23/485 , C23B5/50
CPC分类号： H01L23/3157 , C23C8/80 , H01L23/291 , H01L23/485 , H01L2924/0002 , H01L2924/00
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7.发明授权High resolution multiple image camera and method of fabricating integrated circuit masks 失效高分辨率多图像摄像机和整合电路面板的制作方法
公开(公告)号：US3449049A
公开(公告)日：1969-06-10
申请号：US3449049D
申请日：1966-01-14
申请人： IBM
CPC分类号： G03F7/70475 , G03B19/023
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8.发明授权
公开(公告)号：US3247428A
公开(公告)日：1966-04-19
申请号：US14166961
申请日：1961-09-29
申请人： IBM
发明人： PERRI JOHN A , JACOB RISEMAN
CPC分类号： H01L21/00 , C03C17/10 , C23C8/80 , H01L23/291 , H01L2924/0002 , Y10S148/085 , H01L2924/00
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