公开(公告)号：US3623923A

公开(公告)日：1971-11-30

申请号：US3623923D

申请日：1968-09-03

申请人： IBM

发明人： KENNEDY DAVID P ,  PERRI JOHN A ,  RISEMAN JACOB

IPC分类号： H01L29/73 ,  A47B61/04 ,  H01L21/00 ,  H01L21/22 ,  H01L21/331 ,  H01L27/00 ,  B01J17/00 ,  H01L3/00 ,  H01L7/00

CPC分类号： H01L21/22 ,  A47B61/04 ,  H01L21/00 ,  H01L27/00 ,  Y10S148/035 ,  Y10S148/085 ,  Y10S148/106 ,  Y10S148/15 ,  Y10S148/167

摘要： PLANAR TRANSISTOR HAVING REDUCED JUNCTION AREA FOR SMALL CAPACITANCE. A THIN LAYER OF SEMICONDUCTOR MATERIAL IS PLACED ON A SUBSTRATE MATERIAL WHICH IS NEARLY IMPENETRABLE BARRIER AGAINST DIFFUSION BY NORMALLY USED IMPURITY ATOMS. THE DEPTH OF THE JUNCTION IS LIMITED TO APPROXIMATELY THE THICKNESS OF THE THIN LAYER OF SEMICONDUCTOR MATERIAL, THUS LIMITING THE JUNCTION AREA AND CAPACTANCE.

公开(公告)号：US3490962A

公开(公告)日：1970-01-20

申请号：US3490962D

申请日：1966-04-25

申请人： IBM

发明人： DUFFY MICHAEL C ,  KENNEDY DAVID P ,  MURLEY PHILIP C ,  ARMSTRONG WILLIAM J ,  SEABOLDT JACK JAY

IPC分类号： H01L21/00 ,  H01L21/22 ,  H01L29/00 ,  H01L7/44

CPC分类号： H01L21/22 ,  H01L21/00 ,  H01L29/00 ,  Y10S148/043 ,  Y10S148/106 ,  Y10S148/167