发明授权
- 专利标题： Junction transistor using a thin layer of semiconductor material of a diffusion-proof substrate
- 专利标题（中）： 使用扩散掩模的半导体材料薄层的结晶体晶体管
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申请号： US3623923D申请日： 1968-09-03
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公开(公告)号： US3623923A公开(公告)日： 1971-11-30
- 发明人: KENNEDY DAVID P , PERRI JOHN A , RISEMAN JACOB
- 申请人： IBM
- 专利权人： Ibm
- 当前专利权人： Ibm
- 优先权： US75680668 1968-09-03
- 主分类号： H01L29/73
- IPC分类号： H01L29/73 ; A47B61/04 ; H01L21/00 ; H01L21/22 ; H01L21/331 ; H01L27/00 ; B01J17/00 ; H01L3/00 ; H01L7/00
摘要：
PLANAR TRANSISTOR HAVING REDUCED JUNCTION AREA FOR SMALL CAPACITANCE. A THIN LAYER OF SEMICONDUCTOR MATERIAL IS PLACED ON A SUBSTRATE MATERIAL WHICH IS NEARLY IMPENETRABLE BARRIER AGAINST DIFFUSION BY NORMALLY USED IMPURITY ATOMS. THE DEPTH OF THE JUNCTION IS LIMITED TO APPROXIMATELY THE THICKNESS OF THE THIN LAYER OF SEMICONDUCTOR MATERIAL, THUS LIMITING THE JUNCTION AREA AND CAPACTANCE.
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