公开(公告)号：US3805736A

公开(公告)日：1974-04-23

申请号：US37530873

申请日：1973-06-29

Applicant: IBM

Inventor： FOEHRING R ,  GARNACHE R ,  KENNEY D

IPC: C30B31/10 ,  C30B31/12 ,  C30B31/16 ,  C23C13/10

CPC classification number: C30B31/16 ,  C30B31/106 ,  C30B31/12 ,  Y10S148/006 ,  Y10S148/12

Abstract: Apparatus for continuously carrying out mass transfer reactions in a reaction chamber utilizing laminar flow to provide diffusion limited transport and to provide isolation between process steps. There is provided a gaseous phase material inlet filter tube to introduce gaseous phase material in laminar flow within a reaction zone and an exhaust pressure baffle to maintain laminar flow throughout the reaction zone. Substrates may be continuously passed through a reaction zone to provide an inline system.

Abstract translation: 用于在反应室中连续进行质量传递反应的装置，其利用层流以提供扩散限制的传输并在工艺步骤之间提供隔离。 提供了一种气相材料入口过滤管，以在反应区内的层流中引入气相物质和排气压力挡板，以保持整个反应区域中的层流。 底物可以连续地通过反应区以提供在线系统。

公开(公告)号：US3841926A

公开(公告)日：1974-10-15

申请号：US32039473

申请日：1973-01-02

Applicant: IBM

Inventor： GARNACHE R ,  SMITH W

IPC: G11C11/41 ,  H01L21/225 ,  H01L21/336 ,  H01L21/8234 ,  H01L21/8242 ,  H01L23/522 ,  H01L27/07 ,  H01L27/088 ,  H01L27/10 ,  H01L27/108 ,  H01L29/78 ,  H01L7/34

CPC classification number: H01L27/10805 ,  H01L21/2255 ,  H01L23/522 ,  H01L27/0733 ,  H01L2924/0002 ,  Y10S148/007 ,  Y10S148/02 ,  Y10S148/043 ,  Y10S148/102 ,  Y10S148/117 ,  Y10S148/122 ,  Y10S257/927 ,  Y10S438/975 ,  H01L2924/00

Abstract: Integrated circuits of high density are fabricated in a simplified process which allows both the use of multiple conducting layers in a dielectric above a semiconductor substrate, such as a polycrystalline silicon (polysilicon) field shield and metal interconnection lines, while also making provision for very precise alignment of subsequent layers to diffusions. A doped oxide containing a suitable dopant, such as arsenic in the case of a p-type silicon substrate, is deposited on the substrate. A pattern corresponding to desired diffusions is generated by normal photolithographic and etching techniques. A second, undoped oxide layer is thermally grown over the semiconductor substrate with dopant from the doped oxide simultaneously diffusing into areas of the substrate underlying the doped oxide. The undoped oxide serves to prevent autodoping. Thermally growing the undoped oxide layer converts a layer of the semiconductor surface not covered by doped oxide to the undoped oxide. Both oxide layers are then removed, leaving slight steps at the surface of the semiconductor substrate around the diffusion. The slight steps serve to allow very precise alignment of masks for subsequent process steps. Otherwise, the structure produced is very planar. An insulating layer, desirably a composite of silicon dioxide and silicon nitride in the case of a silicon substrate, is then formed on the substrate, followed by a layer of polycrystalline semiconductor, desirably doped to provide high conductivity. Openings are then etched in the polycrystalline semiconductor layer to allow formation of gate electrodes of FET''s, contact to the substrate, and contact of a subsequent interconnection metallization to diffusions in some of the circuits. A second insulating layer, such as silicon dioxide, is then grown on the polycrystalline semiconductor layer. Contact holes are then made to diffusions in the substrate, the substrate itself, and the polycrystalline silicon. The deposition and etching of an interconnection layer on the second insulating layer completes fabrication of the integrated circuit.

公开(公告)号：US3790404A

公开(公告)日：1974-02-05

申请号：US3790404D

申请日：1972-06-19

Applicant: IBM

Inventor： GARNACHE R ,  GHATALIA A ,  MICHAUD R

IPC: C23F4/00 ,  B01J15/00 ,  C23C16/44 ,  C23C16/54 ,  C30B25/02 ,  C30B25/14 ,  C30B31/10 ,  C30B31/16 ,  H01L21/205 ,  H01L21/22 ,  H01L21/302 ,  H01L21/31 ,  C23C11/08

CPC classification number: C30B31/106 ,  C23C16/54 ,  C30B31/16 ,  Y10S438/935

Abstract: Apparatus for effecting uniform and continuous mass transport reactions, such as oxidation, diffusion, etching, etc., between a gaseous phase reactant and semiconductor substrates. The apparatus comprises a longitudinal process tube, which includes a reaction zone flanked on either side by a combination entranceexhaust section and an exit-exhaust section. Reactant gas is provided to the reaction zone at a fixed flow rate and allowed to escape from the reaction zone axially through the two exhaust zones. Accurate isolation of the reaction zone is accomplished by passing additional gases into the entrance and exit zones at a rate sufficient to cause some gas to flow into the reaction zone where it is carried away through the exhaust zones by the axially flowing reacting gas.

Abstract translation: 用于在气相反应物和半导体衬底之间进行均匀且连续的质量传递反应（例如氧化，扩散，蚀刻等）的装置。 该装置包括纵向处理管，其包括在两侧的组合进入排气段和出口排气段两侧的反应区。 以固定的流速将反应物气体提供给反应区，并允许轴向通过两个排气区从反应区逸出。 通过将额外的气体以足以使一些气体流入反应区域的速率将额外的气体通入入口和出口区域，其中通过轴向流动的反应气体将其输送通过排气区域来实现反应区域的精确隔离。