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公开(公告)号：US20170040232A1
公开(公告)日：2017-02-09
申请号：US15229590
申请日：2016-08-05
IPC分类号： H01L21/66 , H01L21/306
CPC分类号： H01L22/20 , C23C16/0254 , C23C16/345 , C23C16/45502 , C23C16/4586 , C23C16/507 , C23C16/52 , H01L21/0217 , H01L21/02274 , H01L21/30625 , H01L21/3212 , H01L21/32139 , H01L21/67103 , H01L21/6715 , H01L21/67248 , H01L21/67253 , H01L21/68742 , H01L22/12
摘要： A technique is provided in which a deviation of a characteristic of a semiconductor device is suppressed from occurring. The technique includes a method of a manufacturing a semiconductor device, including: (a) polishing a first silicon-containing layer formed on a substrate including a convex structure; (b) obtaining a data representing a height distribution of a surface of the first silicon-containing layer after performing the step (a); (c) determining a process condition; and (d) supplying a process gas to form a second silicon-containing layer wherein the process gas is activated such that a concentration of an active species of the process gas at a center portion of the substrate differs from a concentration of an active species at a peripheral portion of the substrate to adjust heights of surfaces of a laminated film according to the process condition.
摘要翻译： 提供了抑制半导体器件的特性的偏差的技术。 该技术包括制造半导体器件的方法，包括：（a）研磨形成在包括凸起结构的衬底上的第一含硅层; （b）在执行步骤（a）之后获得表示第一含硅层的表面的高度分布的数据; （c）确定工艺条件; 和（d）提供处理气体以形成第二含硅层，其中处理气体被激活，使得底物中心部分处理气体的活性种类的浓度不同于活性物质的浓度 基板的周边部分，以根据工艺条件调节层压膜表面的高度。
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公开(公告)号：US20150221503A1
公开(公告)日：2015-08-06
申请号：US14566989
申请日：2014-12-11
发明人： Kazuyuki TOYODA , Tadashi TAKASAKI , Hiroshi ASHIHARA , Atsushi SANO , Naonori AKAE , Hidehiro YANAI
IPC分类号： H01L21/02
CPC分类号： H01L21/02263 , C23C16/4405 , C23C16/4412 , C23C16/45561 , C23C16/4557 , H01J37/3244 , H01J37/32449 , H01J37/32577
摘要： A method of manufacturing a semiconductor device is disclosed. The method includes (a) loading a substrate into a process chamber; (b) processing the substrate by supplying a process gas into the process chamber via a shower head disposed above the process chamber and including a buffer chamber; (c) unloading the substrate from the process chamber; and (d) cleaning the buffer chamber and the process chamber after performing the step (c), wherein the step (d) comprises: (d-1) cleaning the buffer chamber by a plasma generation from a cleaning gas in the buffer chamber by a plasma generation unit including a plasma generation region switching unit; and (d-2) cleaning the process chamber by switching the plasma generation from the cleaning gas in the buffer chamber to a plasma generation from the cleaning gas in the process chamber by the plasma generation region switching unit.
摘要翻译： 公开了制造半导体器件的方法。 该方法包括（a）将衬底装载到处理室中; （b）通过经由设置在所述处理室上方并包括缓冲室的淋浴喷头将处理气体供给所述处理室来处理所述基板; （c）从处理室卸载基板; （d）在执行步骤（c）之后清洗缓冲室和处理室，其中步骤（d）包括：（d-1）通过缓冲室内的清洁气体的等离子体产生清洗缓冲室 等离子体产生单元，其包括等离子体产生区域切换单元; 和（d-2）通过等离子体产生区域切换单元将来自缓冲室中的清洁气体的等离子体产生切换到来自处理室中的清洁气体的等离子体产生来清洁处理室。
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3.发明申请METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM 有权制造半导体器件的方法，基板处理装置和记录介质公开(公告)号：US20150093913A1
公开(公告)日：2015-04-02
申请号：US14495388
申请日：2014-09-24
IPC分类号： H01L21/02 , H01L21/67 , C23C16/455 , C23C16/511 , C23C16/52
CPC分类号： H01L21/67017 , C23C16/345 , C23C16/4408 , C23C16/45523 , C23C16/45542 , C23C16/45557 , H01J37/32091 , H01J37/32449 , H01L21/0217 , H01L21/02211 , H01L21/02274 , H01L21/0228
摘要： A method of manufacturing a semiconductor device includes supplying a precursor gas to a substrate; supplying a reaction gas to a plasma generation region; supplying high frequency power to the plasma generation region; and generating plasma of the reaction gas by adjusting a pressure of the plasma generation region to a first pressure before the reaction gas is supplied and adjusting the pressure of the plasma generation region to a second pressure lower than the first pressure while the reaction gas and the high frequency power are supplied.
摘要翻译： 制造半导体器件的方法包括将前体气体供给到基板; 向等离子体产生区域供应反应气体; 向等离子体产生区域提供高频功率; 以及通过在所述反应气体供应之前将所述等离子体产生区域的压力调节到第一压力并且将所述等离子体产生区域的压力调节到低于所述第一压力的第二压力来产生所述反应气体的等离子体，同时所述反应气体和 提供高频功率。
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4.发明申请SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开基板加工装置及制造半导体装置的方法公开(公告)号：US20140087567A1
公开(公告)日：2014-03-27
申请号：US14039394
申请日：2013-09-27
CPC分类号： C23C16/44 , C23C16/402 , C23C16/45523 , C23C16/45565 , C23C16/50 , C23C16/54 , H01L21/02164 , H01L21/02219 , H01L21/02263 , H01L21/02274 , H01L21/0228
摘要： Provided is a substrate processing apparatus including: a substrate mounting portion provided in a process chamber and capable of mounting a plurality of substrates in a circumferential direction; a rotating mechanism that rotates the substrate mounting portion at a predetermined angular velocity; dividing structures provided in a radial form from a center of a lid of the process chamber so as to divide the process chamber into a plurality of areas; and gas supply areas disposed between the adjacent dividing structures, wherein an angle between the adjacent dividing structures with one gas supply area interposed is set to an angle corresponding to the angular velocity and a period in which a portion of the substrate mounting portion passes through the gas supply area.
摘要翻译： 提供了一种基板处理装置，包括：基板安装部，设置在处理室中，能够沿圆周方向安装多个基板; 旋转机构，其以预定角速度旋转所述基板安装部; 从处理室的盖的中心以径向形式设置的分隔结构，以将处理室分成多个区域; 以及设置在相邻的分隔结构之间的气体供给区域，其中相邻的分隔结构与一个气体供应区域的插入角度被设定为与角速度相对应的角度以及基板安装部分的一部分穿过 供气面积
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公开(公告)号：US20130072002A1
公开(公告)日：2013-03-21
申请号：US13674753
申请日：2012-11-12
IPC分类号： H01L21/205
CPC分类号： H01L21/02274 , C23C16/452 , C23C16/45525 , C23C16/45542 , C23C16/45546 , C23C16/45578 , C23C16/4583 , C23C16/4584 , C23C16/54 , H01J37/32357 , H01J37/3244 , H01J37/32513 , H01J37/32541 , H01J37/32834 , H01J2237/332 , H01L21/02183 , H01L21/02205 , H01L21/02211 , H01L21/205 , H01L21/31604 , H01L21/67109 , H01L21/77
摘要： A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.
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公开(公告)号：US20180286727A1
公开(公告)日：2018-10-04
申请号：US15917131
申请日：2018-03-09
发明人： Naofumi OHASHI , Satoshi TAKANO , Kazuyuki TOYODA , Shun MATSUI
IPC分类号： H01L21/677 , H01L21/683 , H01L21/67 , H01J37/32 , F17D1/04
CPC分类号： H01L21/67739 , F17D1/04 , H01J37/32449 , H01L21/67017 , H01L21/67103 , H01L21/67173 , H01L21/6719 , H01L21/67248 , H01L21/6838 , H01L21/68742 , H01L21/68792
摘要： Described herein is a technique capable of improving the uniformity of device characteristics. According to the technique described herein, there is provided a method of processing a substrate, including: (a) loading a substrate having a patterned hard mask into a process chamber; (b) supplying a metal-containing gas at a first pressure into the process chamber; and (c) supplying an inert gas into the process chamber and storing the metal-containing gas at a second pressure lower than the first pressure after performing (b).
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公开(公告)号：US20170159181A1
公开(公告)日：2017-06-08
申请号：US15366697
申请日：2016-12-01
发明人： Kazuyuki TOYODA , Tetsuo YAMAMOTO
IPC分类号： C23C16/46 , C23C16/52 , C23C16/458 , C23C16/44 , C23C16/455
CPC分类号： C23C16/4586 , C23C16/345 , C23C16/4412 , C23C16/45525 , C23C16/45565 , C23C16/4557 , C23C16/45582
摘要： A substrate processing apparatus includes a substrate support part provided with a first heating part, configured to heat a substrate, a gas supply part installed above the substrate support part and configured to supply a process gas to the substrate, a first exhaust port configured to exhaust an atmosphere of a process space existing above the substrate support part, a gas distribution part installed to face the substrate support part, a lid part provided with a second exhaust port configured to exhaust a buffer space existing between the gas supply part, and the gas distribution part, a rectifying part installed within the buffer space and provided with a second heating part at least partially facing the second exhaust port, the rectifying part configured to rectify the process gas, and a control part configured to control the second heating part.
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公开(公告)号：US20160293500A1
公开(公告)日：2016-10-06
申请号：US15015461
申请日：2016-02-04
IPC分类号： H01L21/66 , H01L21/311 , H01L21/02
CPC分类号： H01L22/20 , C23C16/45502 , C23C16/52 , C23C16/56 , H01L21/02164 , H01L21/02274 , H01L21/31053 , H01L21/31144 , H01L21/76801 , H01L21/76816 , H01L21/76819 , H01L22/12
摘要： A method of manufacturing a semiconductor device includes receiving film thickness distribution data of a polished first insulating film of a substrate; calculating processing data for reducing a difference between a film thickness at a center side of the substrate and a film thickness at a periphery side of the substrate, based on the film thickness distribution data; loading the substrate into a process chamber; supplying a process gas to the substrate; and correcting a film thickness of the first insulating film based on the processing data by activating the process gas so that a concentration of active species of the process gas generated at the center side of the substrate differs from a concentration of active species of the process gas generated at the periphery side of the substrate.
摘要翻译： 一种制造半导体器件的方法包括：接收衬底的抛光的第一绝缘膜的膜厚度分布数据; 计算用于基于所述膜厚分布数据减少所述基板的中心侧的膜厚与所述基板的周边侧的膜厚之间的差异的处理数据; 将基板装载到处理室中; 向所述基板供应处理气体; 以及通过激活处理气体，基于处理数据校正第一绝缘膜的膜厚度，使得在基板的中心侧产生的处理气体的活性种类的浓度与处理气体的活性种类的浓度不同 在基板的周边侧产生。
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公开(公告)号：US20160276135A1
公开(公告)日：2016-09-22
申请号：US15006174
申请日：2016-01-26
发明人： Tetsuo YAMAMOTO , Kazuyuki TOYODA , Shun MATSUI
IPC分类号： H01J37/32 , C23C16/455 , C23C16/50
CPC分类号： C23C16/455 , C23C16/34 , C23C16/45538 , C23C16/45551 , C23C16/45563 , C23C16/505 , H01J37/321 , H01J37/3211
摘要： A substrate processing apparatus includes a substrate mounting table on which a substrate is mounted, a process chamber including the substrate mounting table, a gas supply unit configured to supply a gas into the process chamber, and a plasma generating unit configured to convert the gas supplied into the process chamber from the gas supply unit into a plasma state. The plasma generating unit includes a plasma generating chamber configured to serve as a flow path of the gas supplied into the process chamber from the gas supply unit, and a plasma generating conductor configured by a conductor disposed to surround the plasma generating chamber. The plasma generating conductor includes a plurality of main conductor parts extending along a mainstream direction of the gas within the plasma generating chamber, and a plurality of connection conductor parts configured to electrically connect the plurality of main conductor parts with each other.
摘要翻译： 基板处理装置包括：基板安装台，安装有基板的基板安装台，包括基板安装台的处理室，被配置为向处理室供给气体的气体供给单元;以及等离子体生成单元， 从气体供应单元进入处理室进入等离子体状态。 等离子体发生单元包括等离子体产生室，其被配置为用作从气体供应单元供应到处理室中的气体的流动路径，以及等离子体发生导体，其由布置成围绕等离子体产生室的导体构成。 等离子体产生导体包括沿着等离子体发生室内的气体的主流方向延伸的多个主导体部分和被配置为将多个主导体部彼此电连接的多个连接导体部。
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公开(公告)号：US20180226228A1
公开(公告)日：2018-08-09
申请号：US15696220
申请日：2017-09-06
发明人： Kazuyuki TOYODA , Naofumi OHASHI
IPC分类号： H01J37/32 , C23C16/458 , C23C16/52 , C23C16/50
摘要： There is provided a substrate processing apparatus which includes: a processing container in which a substrate is accommodated; a substrate supporting part configured to support the substrate inside the processing container and including a support electrode; an upper electrode installed to face the substrate supporting part; a first impedance control part having one end connected to the upper electrode; a second impedance control part having one end connected to the support electrode; a processing gas supply part configured to supply a processing gas to the substrate; an activation part configured to activate the processing gas, the activation part being installed outside the processing container and being connected to a power supply part via an insulating part; and a third impedance control part having one end connected between the insulating part and the activation part.
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