摘要:
A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.
摘要:
A substrate processing apparatus includes a processing chamber housing a substrate, a vaporizer which vaporizes processing liquid and supply processing gas into the processing chamber, a reserve tank storing the processing liquid, a line switching unit connected to the reserve tank, a tank supply pipe connected to the line switching unit and supplies the processing liquid to the reserve tank, an exhausting unit connected to the line switching unit and exhausts the processing liquid in the reserve tank, and a controlling unit which controls the line switching unit to exhaust the processing liquid for exhausting the processing liquid from the reserve tank to the exhausting unit and exhaust the processing liquid in the pipe for supplying the processing liquid from the tank supply pipe to the exhausting unit before and/or after supplying the processing liquid from the processing liquid supplying pipe to the reserve tank.