知搜-全球专利检索

  1. 登录
  2. 注册

搜索结果

8 条记录 (耗时 0.016 秒)

    Method for Pattern Measurement, Method for Setting Device Parameters of Charged Particle Radiation Device, and Charged Particle Radiation Device
    1.
    发明申请
    Method for Pattern Measurement, Method for Setting Device Parameters of Charged Particle Radiation Device, and Charged Particle Radiation Device 有权
    图案测量方法，带电粒子辐射装置的设备参数设置方法和带电粒子辐射装置

    公开(公告)号：US20150357158A1

    公开(公告)日：2015-12-10

    申请号：US14760322

    申请日：2014-01-22

    申请人： HITACHI HIGH-TECHNOLOGIES CORPORATION

    发明人： Makoto SUZUKI ,  Satoru YAMAGUCHI ,  Kei SAKAI ,  Miki ISAWA ,  Satoshi TAKADA ,  Kazuhisa HASUMI ,  Masami IKOTA

    IPC分类号： H01J37/30 ,  H01J37/28

    CPC分类号： H01J37/30 ,  H01J37/28 ,  H01J2237/2814 ,  H01J2237/2817 ,  H01J2237/3175

    摘要： An object of the present invention is to provide a method for pattern measurement and a charged particle radiation device in which a pattern formed by using a DSA technique can be very precisely measured and inspected. According to an aspect for achieving the object, a method for pattern measurement or a charged particle radiation device for realizing the measurement is proposed as follows. A charged particle is radiated to a polymer compound used for a self-organization lithography technique, and a specific polymer is considerably contracted as compared to the other polymer among multiple polymers forming the polymer compound. Thereafter, dimensions between multiple edges of the other polymer are measured, based on a signal obtained by scanning a region including the other polymer with the charged particle beam.

    摘要翻译： 本发明的目的是提供一种用于图案测量的方法和带电粒子辐射装置，其中可以非常精确地测量和检查使用DSA技术形成的图案。 根据实现该目的的方面，提出了用于图案测量的方法或用于实现测量的带电粒子辐射装置如下。 将带电粒子照射到用于自组织光刻技术的聚合物化合物中，与形成高分子化合物的多种聚合物中的其它聚合物相比，特定聚合物显着收缩。 此后，基于通过用带电粒子束扫描包括其它聚合物的区域而获得的信号来测量另一聚合物的多个边缘之间的尺寸。

    Charged Particle Beam Apparatus
    3.
    发明申请
    Charged Particle Beam Apparatus 审中-公开

    公开(公告)号：US20190295815A1

    公开(公告)日：2019-09-26

    申请号：US16291070

    申请日：2019-03-04

    申请人： Hitachi High-Technologies Corporation

    发明人： Yasunori TAKASUGI ,  Satoru YAMAGUCHI ,  Kei SAKAI ,  Hideki ITAI ,  Yoshinori MOMONOI ,  Toshimasa KAMEDA ,  Yoshihiro KIMURA

    IPC分类号： H01J37/22 ,  H01J37/244 ,  H01J37/28 ,  H01J37/12

    摘要： Provided is a charged particle beam apparatus, aiming at obtaining an image and the like focused on the sample surface and the bottom while preventing the visual field deviation occurred when focusing on the sample surface and the bottom respectively. The charged particle beam apparatus forms a first image (301), which is based on detection of the first energy charged particles, based on an irradiation with a beam whose focus is adjusted on a sample surface side, forms a second image (304) which is based on detection of second energy charged particles having a relatively higher energy than the first energy and a third image (303) which is based on the detection of the first energy charged particles, based on the irradiation with a beam whose focus is adjusted on a bottom side of a pattern included in the sample, acquires a deviation between the first image and the third image, and composes the first image and the second image so as to correct the deviation.

    Charged Particle Beam Device
    4.
    发明申请
    Charged Particle Beam Device 审中-公开

    公开(公告)号：US20190035600A1

    公开(公告)日：2019-01-31

    申请号：US16071816

    申请日：2016-01-29

    申请人： Hitachi High-Technologies Corporation

    发明人： Kei SAKAI ,  Satoru YAMAGUCHI ,  Hideki ITAI ,  Yasunori TAKASUGI ,  Kumiko SHIMIZU

    IPC分类号： H01J37/28 ,  H01J37/147 ,  H01J37/22

    摘要： The objective of the present invention is to provide a charged particle beam device for setting, from an image of a trench-like groove or a pit, device conditions for finding a hole or the like provided in the trench or the pit, or measuring a hole or the like provided inside the trench or the like with high accuracy. In the present invention, a charged particle beam device comprises: a deflector for causing a charged particle beam emitted from a charged particle source to perform a scan; a detector for detecting a charged particle obtained on the basis of the scanning of the charged particle beam; and a computation processing device for generating an image on the basis of the output of the detector. In the charged particle beam device, the computation processing device specifies, from within the generated image, a relatively dark region with respect to other parts thereof, and controls the deflector in such a manner that the charged particle beam selectively scans a sample position corresponding to the dark region.

    Image-Forming Device, and Dimension Measurement Device
    6.
    发明申请
    Image-Forming Device, and Dimension Measurement Device 审中-公开

    公开(公告)号：US20190121113A1

    公开(公告)日：2019-04-25

    申请号：US16221739

    申请日：2018-12-17

    申请人： Hitachi High-Technologies Corporation

    发明人： Yasunori TAKASUGI ,  Kei SAKAI ,  Satoru YAMAGUCHI ,  Kazuyuki HIRAO

    IPC分类号： G02B21/36 ,  G01B15/04 ,  G02B21/00 ,  G06T7/32 ,  H01J37/28 ,  G01B15/00 ,  G06K9/62

    摘要： An image forming device is provided that is capable of forming a proper integrated signal even when an image or a signal waveform is acquired from a pattern having the possibility of preventing proper matching, such as a repetition pattern, a shrinking pattern, and the like. In particular, the image forming device forms an integrated image by integrating a plurality of image signals and is provided with: a matching processing section that performs a matching process between the plurality of image signals; an image integration section that integrates the plurality of image signals for which positioning has been performed by the matching processing section; and a periodicity determination section that determines a periodicity of a pattern contained in the image signals. The matching processing section varies a size of an image signal area for the matching in accordance with a determination by the periodicity determination section.

    SEMICONDUCTOR CIRCUIT PATTERN MEASURING APPARATUS AND METHOD
    8.
    发明申请
    SEMICONDUCTOR CIRCUIT PATTERN MEASURING APPARATUS AND METHOD 有权
    半导体电路图形测量装置及方法

    公开(公告)号：US20140003703A1

    公开(公告)日：2014-01-02

    申请号：US13868352

    申请日：2013-04-23

    申请人： HITACHI HIGH-TECHNOLOGIES CORPORATION

    发明人： Takuma SHIBAHARA ,  Michio OIKAWA ,  Kei SAKAI ,  Satoru YAMAGUCHI

    IPC分类号： G06T7/00

    CPC分类号： G06T7/0004 ,  G06T7/136 ,  G06T2207/20016 ,  G06T2207/30148

    摘要： Included is a multiple resolution image generating unit which applies a plurality of noise removing filters to a semiconductor circuit pattern image and generates a multiple resolution image, a multiple resolution differential image generating unit which generates a multiple resolution differential image from a difference of images between hierarchies of the multiple resolution image, and a contour extracting unit which extracts a contour of the semiconductor circuit pattern based on an intensity signal of the semiconductor circuit pattern image. The contour extracting unit calculates an intensity signal level upon extracting a contour of the semiconductor circuit pattern from the multiple resolution image by using an image signal of the multiple resolution differential image, and extracts a contour of the semiconductor circuit pattern based on the calculated intensity signal level.

    摘要翻译： 包括多分辨率图像生成单元，其对半导体电路图案图像应用多个噪声去除滤波器并生成多分辨率图像;多分辨率差分图像生成单元，其从层级之间的图像的差异生成多分辨率差分图像 以及轮廓提取单元，其基于半导体电路图案图像的强度信号提取半导体电路图案的轮廓。 轮廓提取单元通过使用多分辨率差分图像的图像信号从多分辨率图像提取半导体电路图案的轮廓来计算强度信号电平，并且基于计算出的强度信号提取半导体电路图案的轮廓 水平。