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公开(公告)号：US20200219243A1
公开(公告)日：2020-07-09
申请号：US16638033
申请日：2017-08-23
摘要： An object of the invention is to quantitatively evaluate crystal growth amount in a wide range from an undergrowth state to an overgrowth state with nondestructive inspection. By using a plenty of image feature values such as pattern brightness, a pattern area and a pattern shape which are extracted from an SEM image, and depending on whether brightness inside a pattern is lower than brightness outside the pattern (401), undergrowth and overgrowth is determined (402, 405). Based on a brightness difference or the pattern area, a growth amount index or a normality index of crystal growth in a concave pattern such as a hole pattern or a trench pattern is calculated (404, 407).
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公开(公告)号：US20200098543A1
公开(公告)日：2020-03-26
申请号：US16310830
申请日：2016-07-22
发明人： Miki ISAWA , Ayumi DOI , Kazuhisa HASUMI
IPC分类号： H01J37/28 , H01J37/22 , G01N23/2251 , G06T7/00
摘要： Provided is a pattern evaluation device with which measurement or inspection conditions, supplied for the measurement and inspection of a replica produced by transferring a pattern for a semiconductor wafer or the like, can be easily set, and with which recipes can be easily generated, when measurement and inspection conditions for a semiconductor wafer or the like and recipes in which these conditions are stored have been prepared in advance. The pattern evaluation device in which a pattern formed on a sample is evaluated on the basis of image data or signal waveforms obtained on the basis of beam irradiation or probe scanning of the sample, wherein the device conditions for evaluating a semiconductor wafer are converted to device conditions for evaluating a replica obtained by transferring a semiconductor wafer, and the converted device conditions are used to evaluate the replica.
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公开(公告)号：US20190204247A1
公开(公告)日：2019-07-04
申请号：US16330003
申请日：2016-09-01
发明人： Atsuko YAMAGUCHI , Kazuhisa HASUMI , Hitoshi NAMAI
IPC分类号： G01N23/2251 , H01J37/28 , H01J37/317 , H01L27/088
摘要： To provide an image analysis apparatus capable of easily extracting an edge of an upper layer pattern formed intersecting with a lower layer pattern so as not to be affected by the lower layer pattern, the image analysis apparatus includes a calculation unit that calculates an analysis range including a region where the lower layer pattern intersects with the upper layer pattern and a region where the lower pattern is not formed, a calculation unit that averages a plurality of signal profiles, a calculation unit that calculates a maximum value and a minimum value of a signal intensity, a calculation unit that calculates a threshold level difference using the maximum value and the minimum value, and a calculation unit that calculates the edge of the upper layer pattern on the signal profile.
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公开(公告)号：US20180308228A1
公开(公告)日：2018-10-25
申请号：US15758630
申请日：2015-09-10
发明人： Atsuko YAMAGUCHI , Masami IKOTA , Kazuhisa HASUMI
IPC分类号： G06T7/00 , G01N23/2251 , G01N21/956 , H01L21/67 , G03F1/44
摘要： In order to provide an inspection device capable of quantitatively evaluating a pattern related to a state of a manufacturing process or performance of an element, it is assumed that an inspection device includes an image analyzing unit that analyzes a top-down image of a sample in which columnar patterns are formed at a regular interval, in which an image analyzing unit 240 includes a calculation unit 243 that obtains a major axis, a minor axis, an eccentricity, and an angle formed by a major axis direction with an image horizontal axis direction of the approximated ellipse as a first index and a Cr calculation unit 248 that obtains a circumferential length of an outline of a columnar pattern on the sample and a value obtained by dividing a square of the circumferential length by a value obtained by multiplying an area surrounded by the outline and 4π as a second index.
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公开(公告)号：US20170030712A1
公开(公告)日：2017-02-02
申请号：US15215756
申请日：2016-07-21
发明人： Kazuhisa HASUMI , Masami IKOTA
摘要： A pattern measurement method and measurement apparatus are provided that appropriately evaluate the deformation of a pattern occurring due to a micro loading effect. In order to achieve the above-mentioned object, there are provided pattern measurement method and apparatus that measure a dimension of a pattern formed on a sample. In the pattern measurement method and apparatus, distances between a reference pattern and a plurality of adjacent patterns adjacent to the reference pattern or inner diameters of the reference pattern in a plurality of directions are measured, and the measurement results of the plurality of distances between the reference pattern and the adjacent patterns or the measurement results of the inner diameters of the reference pattern in the plurality of directions are classified according to distances between the reference pattern and the adjacent patterns or directions of the patterns adjacent to the reference pattern.
摘要翻译： 提供了一种图案测量方法和测量装置，其适当地评估由于微负载效应而发生的图案的变形。 为了实现上述目的，提供了测量样品上形成的图案的尺寸的图案测量方法和装置。 在图案测量方法和装置中，测量参考图案和与参考图案相邻的多个相邻图案或多个方向上的参考图案的内径之间的距离，并且测量多个距离之间的距离 参考图案和相邻图案或多个方向上的参考图案的内径的测量结果根据参考图案与与参考图案相邻的图案的相邻图案或方向之间的距离来分类。
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6.发明申请Method for Pattern Measurement, Method for Setting Device Parameters of Charged Particle Radiation Device, and Charged Particle Radiation Device 有权图案测量方法，带电粒子辐射装置的设备参数设置方法和带电粒子辐射装置公开(公告)号：US20150357158A1
公开(公告)日：2015-12-10
申请号：US14760322
申请日：2014-01-22
发明人： Makoto SUZUKI , Satoru YAMAGUCHI , Kei SAKAI , Miki ISAWA , Satoshi TAKADA , Kazuhisa HASUMI , Masami IKOTA
CPC分类号： H01J37/30 , H01J37/28 , H01J2237/2814 , H01J2237/2817 , H01J2237/3175
摘要： An object of the present invention is to provide a method for pattern measurement and a charged particle radiation device in which a pattern formed by using a DSA technique can be very precisely measured and inspected. According to an aspect for achieving the object, a method for pattern measurement or a charged particle radiation device for realizing the measurement is proposed as follows. A charged particle is radiated to a polymer compound used for a self-organization lithography technique, and a specific polymer is considerably contracted as compared to the other polymer among multiple polymers forming the polymer compound. Thereafter, dimensions between multiple edges of the other polymer are measured, based on a signal obtained by scanning a region including the other polymer with the charged particle beam.
摘要翻译： 本发明的目的是提供一种用于图案测量的方法和带电粒子辐射装置，其中可以非常精确地测量和检查使用DSA技术形成的图案。 根据实现该目的的方面，提出了用于图案测量的方法或用于实现测量的带电粒子辐射装置如下。 将带电粒子照射到用于自组织光刻技术的聚合物化合物中，与形成高分子化合物的多种聚合物中的其它聚合物相比，特定聚合物显着收缩。 此后，基于通过用带电粒子束扫描包括其它聚合物的区域而获得的信号来测量另一聚合物的多个边缘之间的尺寸。
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