发明申请
- 专利标题: Pattern Measurement Method and Measurement Apparatus
- 专利标题(中): 图案测量方法和测量装置
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申请号: US15215756申请日: 2016-07-21
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公开(公告)号: US20170030712A1公开(公告)日: 2017-02-02
- 发明人: Kazuhisa HASUMI , Masami IKOTA
- 申请人: Hitachi High-Technologies Corporation
- 优先权: JP2015-151450 20150731
- 主分类号: G01B15/02
- IPC分类号: G01B15/02 ; G01B15/06
摘要:
A pattern measurement method and measurement apparatus are provided that appropriately evaluate the deformation of a pattern occurring due to a micro loading effect. In order to achieve the above-mentioned object, there are provided pattern measurement method and apparatus that measure a dimension of a pattern formed on a sample. In the pattern measurement method and apparatus, distances between a reference pattern and a plurality of adjacent patterns adjacent to the reference pattern or inner diameters of the reference pattern in a plurality of directions are measured, and the measurement results of the plurality of distances between the reference pattern and the adjacent patterns or the measurement results of the inner diameters of the reference pattern in the plurality of directions are classified according to distances between the reference pattern and the adjacent patterns or directions of the patterns adjacent to the reference pattern.
公开/授权文献
- US10295339B2 Pattern measurement method and measurement apparatus 公开/授权日:2019-05-21
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