摘要:
Thickness of a film in a sample may be detected by directing pump laser pulses to the surface of a sample to generate an acoustic pulse in a sample. The acoustic pulse propagates downwards until it reaches an interface between the bottom of the film and a substrate and is reflected back to the top surface of the film as a first echo. A reflection of the first echo propagates downwards and is again reflected back towards the surface as a second echo. Heterodyne interferometry is used to measure the lapse of time between the first and second echos from which the thickness of the film may be determined.
摘要:
A polarized sample beam of broadband radiation is focused onto the surface of a sample and the radiation modified by the sample is collected by means of a mirror system in different planes of incidence. The sample beam focused to the sample has a multitude of polarization states. The modified radiation is analyzed with respect to a polarization plane to provide a polarimetric spectrum. Thickness and refractive information may then be derived from the spectrum. Preferably the polarization of the sample beam is altered only by the focusing and the sample, and the analyzing is done with respect to a fixed polarization plane. In the preferred embodiment, the focusing of the sample beam and the collection of the modified radiation are repeated employing two different apertures to detect the presence or absence of a birefringence axis in the sample. In another preferred embodiment, the above-described technique may be combined with ellipsometry for determining the thicknesses and refractive indices of thin films.
摘要:
A polarized sample beam of broadband radiation is focused onto the surface of a sample and the radiation modified by the sample is collected by means of a mirror system in different planes of incidence. The sample beam focused to the sample has a multitude of polarization states. The modified radiation is analyzed with respect to a polarization plane to provide a polarimetric spectrum. Thickness and refractive information may then be derived from the spectrum. Preferably the polarization of the sample beam is altered only by the focusing and the sample, and the analyzing is done with respect to a fixed polarization plane. In the preferred embodiment, the focusing of the sample beam and the collection of the modified radiation are repeated employing two different apertures to detect the presence or absence of a birefringence axis in the sample. In another preferred embodiment, the above-described technique may be combined with ellipsometry for determining the thicknesses and refractive indices of thin films.
摘要:
Thickness of a film in a sample may be detected by directing pump laser pulses to the surface of a sample to generate an acoustic pulse in a sample. The acoustic pulse propagates downwards until it reaches an interface between the bottom of the film and a substrate and is reflected back to the top surface of the film as a first echo. A reflection of the first echo propagates downwards and is again reflected back towards the surface as a second echo. Interferometry is used to measure the lapse of time between the first and second echos from which the thickness of the film may be determined.
摘要:
In an optical system measuring sample characteristics, by reducing the amount of ambient absorbing gas or gases and moisture present in at least a portion of the illumination and detection paths experienced by vacuum ultraviolet (VUV) radiation used in the measurement process, the attenuation of such wavelength components can be reduced. Such reduction can be accomplished by a process without requiring the evacuation of all gases and moisture from the measurement system. In one embodiment, the reduction can be accomplished by displacing at least some of the absorbing gas(es) and moisture present in at least a portion of the measuring paths so as to reduce the attenuation of VUV radiation. In this manner, the sample does not need to be placed in a vacuum, thereby enhancing system throughput.
摘要:
The surface of a doped semiconductor wafer is heated locally by means of a pump beam whose intensity is modulated at a first frequency. The heated area is sampled by a probe beam whose intensity is modulated at a second frequency. After the probe beam has been modulated (reflected or transmitted) at the first frequency by the wafer, the modulated probe beam is detected at a frequency equal to the difference between the harmonics of the first and second frequencies to determine dose of the dopants in the wafer. Such or similar type of instrument for measuring dose may be combined with an ellipsometer, reflectometer or polarimeter for measuring dose as well as thickness(es) and/or indices of refraction in a combined instrument for measuring the same sample.
摘要:
Various systems for measurement of a specimen are provided. One system includes a first optical subsystem, which is disposed within a purged environment. The purged environment may be provided by a differential purging subsystem. The first optical subsystem performs measurements using vacuum ultraviolet light. This system also includes a second optical subsystem, which is disposed within a non-purged environment. The second optical subsystem performs measurements using non-vacuum ultraviolet light. Another system includes two or more optical subsystems configured to perform measurements of a specimen using vacuum ultraviolet light. The system also includes a purging subsystem configured to maintain a purged environment around the two or more optical subsystems. The purging subsystem is also configured to maintain the same level of purging in both optical subsystems. Some systems also include a cleaning subsystem configured to remove contaminants from a portion of a specimen prior to measurements at vacuum ultraviolet wavelengths.
摘要:
Various systems for measurement of a specimen are provided. One system includes an optical subsystem configured to perform measurements of a specimen using vacuum ultraviolet light and non-vacuum ultraviolet light. This system also includes a purging subsystem that is configured to maintain a purged environment around the optical subsystem during the measurements. Another system includes a cleaning subsystem configured to remove contaminants from a specimen prior to measurement. In one embodiment, the cleaning subsystem may be a laser-based cleaning subsystem that is configured to remove contaminants from a localized area on the specimen. The system also includes an optical subsystem that is configured to perform measurements of the specimen using vacuum ultraviolet light. The optical subsystem is disposed within a purged environment. In some embodiments, the system may include a differential purging subsystem that is configured to provide the purged environment for the optical subsystem.
摘要:
An ellipsometer having a light source for generating a probe beam along a probe beam path. A polarizing beam splitter passes the probe beam along the probe beam path, at least in part, as the probe beam passes through the beam splitter in a first direction, and diverts the probe beam along a detection path, at least in part, as the probe beam passes through the beam splitter in a second direction that is substantially opposite of the first direction. A compensator variably retards at least portions of the probe beam along at least one axis of the compensator, thereby changing an orientation of the light passing through the compensator. Optics focus the probe beam on a spot on a substrate. A concave mirror receives the probe beam from the spot on the substrate as it travels along the probe beam path in the first direction, and sends the probe beam back along the probe beam path in the second direction. A detector receives the probe beam along the detection path. Preferably, all of the elements of the ellipsometer that are disposed along the probe beam path are fixed and do not rotate relative to the probe beam during measurement operations.
摘要:
The present invention relates to in-situ techniques for determining process end points in semiconductor wafer polishing processes. Generally, the technique involves utilizing a scanning inspection machine having multiple pair of lasers and sensors located at different angles for detecting signals caused to emanate from an inspected specimen. The detection techniques determine the end points by differentiating between various material properties within a wafer. An accompanying algorithm is used to obtain an end point detection curve that represents a composite representation of the signals obtained from each of the detectors of the inspection machine. This end point detection curve is then used to determine the process end point. Note that computation of the algorithm is performed during the polishing process so that the process end point can be determined without interruptions that diminish process throughputs.