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    Parametric Profiling Using Optical Spectroscopic Systems
    1.
    发明申请
    Parametric Profiling Using Optical Spectroscopic Systems 有权
    使用光谱系统进行参数分析

    公开(公告)号：US20090135416A1

    公开(公告)日：2009-05-28

    申请号：US11868740

    申请日：2007-10-08

    申请人： Andrei V. Shchegrov ,  Anatoly Fabrikant ,  Mehrdad Nikoonahad ,  Ady Levy ,  Daniel C. Wack ,  Noah Bareket ,  Walter Mieher ,  Ted Dziura

    发明人： Andrei V. Shchegrov ,  Anatoly Fabrikant ,  Mehrdad Nikoonahad ,  Ady Levy ,  Daniel C. Wack ,  Noah Bareket ,  Walter Mieher ,  Ted Dziura

    IPC分类号： G01B11/28 ,  G01J3/00 ,  G01B11/00

    CPC分类号： G03F7/70616 ,  G01N21/211 ,  G01N21/47 ,  G01N21/4788 ,  G01N21/9501 ,  G01N21/956 ,  G01N21/95607 ,  G01N2021/213 ,  G03F7/70625 ,  G03F7/70641

    摘要： A gallery of seed profiles is constructed and the initial parameter values associated with the profiles are selected using manufacturing process knowledge of semiconductor devices. Manufacturing process knowledge may also be used to select the best seed profile and the best set of initial parameter values as the starting point of an optimization process whereby data associated with parameter values of the profile predicted by a model is compared to measured data in order to arrive at values of the parameters. Film layers over or under the periodic structure may also be taken into account. Different radiation parameters such as the reflectivities Rs, Rp and ellipsometric parameters may be used in measuring the diffracting structures and the associated films. Some of the radiation parameters may be more sensitive to a change in the parameter value of the profile or of the films then other radiation parameters. One or more radiation parameters that are more sensitive to such changes may be selected in the above-described optimization process to arrive at a more accurate measurement. The above-described techniques may be supplied to a track/stepper and etcher to control the lithographic and etching processes in order to compensate for any errors in the profile parameters.

    摘要翻译： 构建种子轮廓的画廊，并且使用半导体器件的制造工艺知识来选择与轮廓相关联的初始参数值。 也可以使用制造过程知识来选择最佳种子轮廓和最佳初始参数值集合作为优化过程的起始点，由此将与模型预测的轮廓的参数值相关联的数据与测量数据进行比较，以便 达到参数的值。 也可以考虑在周期性结构之上或之下的膜层。 可以使用诸如反射率Rs，Rp和椭偏参数的不同辐射参数来测量衍射结构和相关膜。 一些辐射参数可能对轮廓或膜的参数值的变化对其他辐射参数更敏感。 可以在上述优化过程中选择对这种变化更敏感的一个或多个辐射参数，以获得更准确的测量。 可以将上述技术提供给轨道/步进器和蚀刻器以控制光刻和蚀刻工艺，以便补偿轮廓参数中的任何误差。

    Optical scanning system for surface inspection
    2.
    发明授权
    Optical scanning system for surface inspection 失效
    光学扫描系统进行表面检查

    公开(公告)号：US07477372B2

    公开(公告)日：2009-01-13

    申请号：US11738989

    申请日：2007-04-23

    申请人： Brian C. Leslie ,  Mehrdad Nikoonahad ,  Keith B. Wells

    发明人： Brian C. Leslie ,  Mehrdad Nikoonahad ,  Keith B. Wells

    IPC分类号： G01N21/00

    CPC分类号： G01N21/95607 ,  G01N21/94 ,  G01N21/9501

    摘要： In an optical scanning system for detecting particles and pattern defects on a sample surface, a light beam is focused to an illuminated spot on the surface and the spot is scanned across the surface along a scan line. A detector is positioned adjacent to the surface to collect scattered light from the spot where the detector includes a one- or two-dimensional array of sensors. Light scattered from the illuminated spot at each of a plurality of positions along the scan line is focused onto a corresponding sensor in the array. A plurality of detectors symmetrically placed with respect to the illuminating beam detect laterally and forward scattered light from the spot. The spot is scanned over arrays of scan line segments shorter than the dimensions of the surface. A bright field channel enables the adjustment of the height of the sample surface to correct for errors caused by height variations of the surface. Different defect maps provided by the output of the detectors can be compared to identify and classify the defects. The imaging function of the array of sensors combines the advantages of a scanning system and an imaging system while improving signal/background ratio of the system.

    摘要翻译： 在用于检测样品表面上的颗粒和图案缺陷的光学扫描系统中，光束被聚焦到表面上的照明光斑上，并且沿着扫描线扫描光斑。 检测器邻近表面定位以收集来自检测器包括传感器的一维或二维阵列的点的散射光。 沿着扫描线的多个位置中的每一个处从照明点散射的光被聚焦到阵列中的对应的传感器上。 相对于照明光束对称放置的多个检测器检测来自光斑的横向和前向散射光。 在比表面尺寸短的扫描线段的阵列上扫描该点。 亮场通道可以调整样品表面的高度，以校正由表面的高度变化引起的误差。 可以比较由检测器输出提供的不同缺陷图，以识别和分类缺陷。 传感器阵列的成像功能结合了扫描系统和成像系统的优点，同时提高了系统的信号/背景比。

    Parametric profiling using optical spectroscopic systems to adjust processing parameter
    5.
    发明申请
    Parametric profiling using optical spectroscopic systems to adjust processing parameter 有权
    参数分析采用光谱系统调整处理参数

    公开(公告)号：US20060132806A1

    公开(公告)日：2006-06-22

    申请号：US11343478

    申请日：2006-01-30

    申请人： Andrei Shchegrov ,  Anatoly Fabrikant ,  Mehrdad Nikoonahad

    发明人： Andrei Shchegrov ,  Anatoly Fabrikant ,  Mehrdad Nikoonahad

    IPC分类号： G01B11/14

    CPC分类号： H01L22/20 ,  G01J3/447 ,  G01J4/04 ,  G01N21/211

    摘要： A gallery of seed profiles is constructed and the initial parameter values associated with the profiles are selected using manufacturing process knowledge of semiconductor devices. Manufacturing process knowledge may also be used to select the best seed profile and the best set of initial parameter values as the starting point of an optimization process whereby data associated with parameter values of the profile predicted by a model is compared to measured data in order to arrive at values of the parameters. Film layers over or under the periodic structure may also be taken into account. Different radiation parameters such as the reflectivities Rs, Rp and ellipsometric parameters may be used in measuring the diffracting structures and the associated films. Some of the radiation parameters may be more sensitive to a change in the parameter value of the profile or of the films then other radiation parameters. One or more radiation parameters that are more sensitive to such changes may be selected in the above-described optimization process to arrive at a more accurate measurement. The above-described techniques may be supplied to a track/stepper and etcher to control the lithographic and etching processes in order to compensate for any errors in the profile parameters.

    摘要翻译： 构建种子轮廓的画廊，并且使用半导体器件的制造工艺知识来选择与轮廓相关联的初始参数值。 也可以使用制造过程知识来选择最佳种子轮廓和最佳初始参数值集合作为优化过程的起始点，由此将与模型预测的轮廓的参数值相关联的数据与测量数据进行比较，以便 达到参数的值。 也可以考虑在周期性结构之上或之下的膜层。 不同的辐射参数，例如反射率R S，R P和椭偏参数可用于测量衍射结构和相关膜。 一些辐射参数可能对轮廓或膜的参数值的变化对其他辐射参数更敏感。 可以在上述优化过程中选择对这种变化更敏感的一个或多个辐射参数，以获得更准确的测量。 可以将上述技术提供给轨道/步进器和蚀刻器以控制光刻和蚀刻工艺，以便补偿轮廓参数中的任何误差。

    Detection of film thickness through induced acoustic pulse-echos
    6.
    发明授权
    Detection of film thickness through induced acoustic pulse-echos 有权
    通过感应声脉冲回波检测膜厚度

    公开(公告)号：US06552803B1

    公开(公告)日：2003-04-22

    申请号：US09375664

    申请日：1999-08-17

    申请人： Haiming Wang ,  Shing Lee ,  Mehrdad Nikoonahad

    发明人： Haiming Wang ,  Shing Lee ,  Mehrdad Nikoonahad

    IPC分类号： G01B902

    CPC分类号： G01B17/025 ,  G01B11/0675 ,  G01N29/2418 ,  G01N29/348 ,  G01N2291/014 ,  G01N2291/02854 ,  G01N2291/0427

    摘要： Thickness of a film in a sample may be detected by directing pump laser pulses to the surface of a sample to generate an acoustic pulse in a sample. The acoustic pulse propagates downwards until it reaches an interface between the bottom of the film and a substrate and is reflected back to the top surface of the film as a first echo. A reflection of the first echo propagates downwards and is again reflected back towards the surface as a second echo. Heterodyne interferometry is used to measure the lapse of time between the first and second echos from which the thickness of the film may be determined.

    摘要翻译： 可以通过将泵浦激光脉冲引导到样品的表面以在样品中产生声脉冲来检测样品中的膜的厚度。 声脉冲向下传播直到其到达膜的底部和基底之间的界面并且作为第一回波被反射回到膜的顶表面。 第一个回波的反射向下传播并再次反射回到表面作为第二回波。 使用异步干涉测量来测量第一和第二回波之间的时间流逝，从该距离可以确定膜的厚度。

    Variable spot-size scanning apparatus
    7.
    发明授权
    Variable spot-size scanning apparatus 失效
    可变点尺寸扫描装置

    公开(公告)号：US5633747A

    公开(公告)日：1997-05-27

    申请号：US361135

    申请日：1994-12-21

    申请人： Mehrdad Nikoonahad

    发明人： Mehrdad Nikoonahad

    IPC分类号： G01B11/30 ,  G01N21/956 ,  G02B26/10 ,  G02F1/11 ,  G03F7/20 ,  H01L21/66 ,  G02F1/33

    CPC分类号： G03F7/70641 ,  G01N21/95623 ,  G02F1/113

    摘要： An apparatus for both deflecting a beam of light illuminating a spot on a surface and varying the size of the spot, electronically, without changing any system components. The apparatus includes an acousto-optic deflector driven with a linear FM signal produced by a chirp signal generator. The linear FM signal is characterized with a dispersion rate, and the chirp signal generator includes a chirp dispersion selector to vary the dispersion rate. A beam of collimated light passes through the acousto-optic deflector and appropriate focusing optics image the beam onto a spot in a nominal focal plane. The chirp dispersion selector sets the dispersion rate in accord to a nominal rate, resulting in the beam illuminating a spot in the focal plane. Generally, the focal plane coincides with a wafer surface, of the type having periodic and non-periodic features on it. The spot size may be varied from that of a diffraction limited spot to a spot whose maximum size is system dependent. The spot size varies as a result of changing the dispersion rate of the chirp signal. The spot size may vary as it is scanned, or may remain fixed during the inspection of a wafer. In this manner, inspection by periodic feature comparison may be implemented when it proves advantageous. Alternatively, a larger spot may be obtained when periodic feature comparison would provide no benefit, and spatial filtering would achieve an enhanced signal/background.

    摘要翻译： 一种用于在不改变任何系统部件的情况下电子地偏转照射光斑的光束并且改变光斑的尺寸的装置。 该装置包括由线性调频信号发生器产生的线性FM信号驱动的声光偏转器。 线性FM信号的特征在于色散速率，并且啁啾信号发生器包括用于改变色散速率的啁啾色散选择器。 准直光束通过声光偏转器并且适当的聚焦光学器件将光束成像到标称焦平面上的光斑上。 啁啾色散选择器将色散速率设置为符合标称速率，导致光束照射焦平面中的光点。 通常，焦平面与其上具有周期性和非周期特征的晶片表面重合。 斑点尺寸可以从衍射限制斑点的尺寸变化到最大尺寸是系统依赖的斑点。 斑点尺寸由于改变啁啾信号的色散速率而变化。 斑点尺寸可能随扫描而变化，或者在晶片检查期间可能保持固定。 以这种方式，当证明有利时，可以实施周期性特征比较的检查。 或者，当周期性特征比较不提供任何益处时，可以获得更大的斑点，并且空间滤波将实现增强的信号/背景。

    SYSTEM FOR SCATTEROMETRIC MEASUREMENTS AND APPLICATIONS
    10.
    发明申请
    SYSTEM FOR SCATTEROMETRIC MEASUREMENTS AND APPLICATIONS 有权
    SCATTERMETRIC测量和应用系统

    公开(公告)号：US20090195779A1

    公开(公告)日：2009-08-06

    申请号：US12410379

    申请日：2009-03-24

    申请人： Anatoly Fabrikant ,  Guoheng Zhao ,  Daniel C. Wack ,  Mehrdad Nikoonahad

    发明人： Anatoly Fabrikant ,  Guoheng Zhao ,  Daniel C. Wack ,  Mehrdad Nikoonahad

    IPC分类号： G01J4/00

    CPC分类号： G01N21/45 ,  G01N21/21 ,  G01N21/4788 ,  G01N21/9501 ,  G01N2021/213 ,  G01N2021/217 ,  G01N2021/8416 ,  G02B5/18

    摘要： Instead of constructing a full multi-dimensional look-up-table as a model to find the critical dimension or other parameters in scatterometry, regression or other optimized estimation methods are employed starting from a “best guess” value of the parameter. Eigenvalues of models that are precalculated may be stored and reused later for other structures having certain common characteristics to save time. The scatterometric data that is used to find the value of the one or more parameter can be limited to those at wavelengths that are less sensitive to the underlying film characteristics. A model for a three-dimensional grating may be constructed by slicing a representative structure into a stack of slabs and creating an array of rectangular blocks to approximate each slab. One dimensional boundary problems may be solved for each block which are then matched to find a two-dimensional solution for the slab. A three-dimensional solution can then be constructed from the two-dimensional solutions for the slabs to yield the diffraction efficiencies of the three-dimensional grating. This model can then be used for finding the one or more parameters of the diffracting structure in scatterometry. Line roughness of a surface can be measured by directing a polarized incident beam in an incident plane normal to the line grating and measuring the cross-polarization coefficient. The value of the one or more parameters may then be supplied to a stepper or etcher to adjust a lithographic or etching process.

    摘要翻译： 不需要构建一个完整的多维查找表作为模型来查找散点图中的关键维度或其他参数，而是从参数的“最佳猜测”值开始采用回归或其他优化的估计方法。 预先计算的模型的特征值可以稍后存储并重用于具有某些共同特征的其他结构以节省时间。 用于查找一个或多个参数的值的散点数据可以限于那些对底层薄膜特性较不敏感的波长数据。 三维光栅的模型可以通过将代表性结构切片成一叠平板并且产生矩形块阵列来近似每个平板来构造。 可以为每个块解决一维边界问题，然后将其匹配以找到板的二维解。 然后可以从板的二维解决方案中构建三维解，以产生三维光栅的衍射效率。 然后，该模型可用于在散射测量中找到衍射结构的一个或多个参数。 可以通过将垂直于线光栅的入射平面中的偏振入射光束引导并测量交叉极化系数来测量表面的线粗糙度。 然后可以将一个或多个参数的值提供给步进器或蚀刻器以调整光刻或蚀刻工艺。