Parametric profiling using optical spectroscopic systems to adjust processing parameter
    1.
    发明申请
    Parametric profiling using optical spectroscopic systems to adjust processing parameter 有权
    参数分析采用光谱系统调整处理参数

    公开(公告)号:US20060132806A1

    公开(公告)日:2006-06-22

    申请号:US11343478

    申请日:2006-01-30

    IPC分类号: G01B11/14

    摘要: A gallery of seed profiles is constructed and the initial parameter values associated with the profiles are selected using manufacturing process knowledge of semiconductor devices. Manufacturing process knowledge may also be used to select the best seed profile and the best set of initial parameter values as the starting point of an optimization process whereby data associated with parameter values of the profile predicted by a model is compared to measured data in order to arrive at values of the parameters. Film layers over or under the periodic structure may also be taken into account. Different radiation parameters such as the reflectivities Rs, Rp and ellipsometric parameters may be used in measuring the diffracting structures and the associated films. Some of the radiation parameters may be more sensitive to a change in the parameter value of the profile or of the films then other radiation parameters. One or more radiation parameters that are more sensitive to such changes may be selected in the above-described optimization process to arrive at a more accurate measurement. The above-described techniques may be supplied to a track/stepper and etcher to control the lithographic and etching processes in order to compensate for any errors in the profile parameters.

    摘要翻译: 构建种子轮廓的画廊,并且使用半导体器件的制造工艺知识来选择与轮廓相关联的初始参数值。 也可以使用制造过程知识来选择最佳种子轮廓和最佳初始参数值集合作为优化过程的起始点,由此将与模型预测的轮廓的参数值相关联的数据与测量数据进行比较,以便 达到参数的值。 也可以考虑在周期性结构之上或之下的膜层。 不同的辐射参数,例如反射率R S,R P和椭偏参数可用于测量衍射结构和相关膜。 一些辐射参数可能对轮廓或膜的参数值的变化对其他辐射参数更敏感。 可以在上述优化过程中选择对这种变化更敏感的一个或多个辐射参数,以获得更准确的测量。 可以将上述技术提供给轨道/步进器和蚀刻器以控制光刻和蚀刻工艺,以便补偿轮廓参数中的任何误差。

    Parametric Profiling Using Optical Spectroscopic Systems
    2.
    发明申请
    Parametric Profiling Using Optical Spectroscopic Systems 有权
    使用光谱系统进行参数分析

    公开(公告)号:US20090135416A1

    公开(公告)日:2009-05-28

    申请号:US11868740

    申请日:2007-10-08

    IPC分类号: G01B11/28 G01J3/00 G01B11/00

    摘要: A gallery of seed profiles is constructed and the initial parameter values associated with the profiles are selected using manufacturing process knowledge of semiconductor devices. Manufacturing process knowledge may also be used to select the best seed profile and the best set of initial parameter values as the starting point of an optimization process whereby data associated with parameter values of the profile predicted by a model is compared to measured data in order to arrive at values of the parameters. Film layers over or under the periodic structure may also be taken into account. Different radiation parameters such as the reflectivities Rs, Rp and ellipsometric parameters may be used in measuring the diffracting structures and the associated films. Some of the radiation parameters may be more sensitive to a change in the parameter value of the profile or of the films then other radiation parameters. One or more radiation parameters that are more sensitive to such changes may be selected in the above-described optimization process to arrive at a more accurate measurement. The above-described techniques may be supplied to a track/stepper and etcher to control the lithographic and etching processes in order to compensate for any errors in the profile parameters.

    摘要翻译: 构建种子轮廓的画廊,并且使用半导体器件的制造工艺知识来选择与轮廓相关联的初始参数值。 也可以使用制造过程知识来选择最佳种子轮廓和最佳初始参数值集合作为优化过程的起始点,由此将与模型预测的轮廓的参数值相关联的数据与测量数据进行比较,以便 达到参数的值。 也可以考虑在周期性结构之上或之下的膜层。 可以使用诸如反射率Rs,Rp和椭偏参数的不同辐射参数来测量衍射结构和相关膜。 一些辐射参数可能对轮廓或膜的参数值的变化对其他辐射参数更敏感。 可以在上述优化过程中选择对这种变化更敏感的一个或多个辐射参数,以获得更准确的测量。 可以将上述技术提供给轨道/步进器和蚀刻器以控制光刻和蚀刻工艺,以便补偿轮廓参数中的任何误差。

    System for scatterometric measurements and applications
    3.
    发明授权
    System for scatterometric measurements and applications 有权
    散射测量和应用系统

    公开(公告)号:US07821654B2

    公开(公告)日:2010-10-26

    申请号:US12410379

    申请日:2009-03-24

    IPC分类号: G01B11/34 G01J4/00

    摘要: Instead of constructing a full multi-dimensional look-up-table as a model to find the critical dimension or other parameters in scatterometry, regression or other optimized estimation methods are employed starting from a “best guess” value of the parameter. Eigenvalues of models that are precalculated may be stored and reused later for other structures having certain common characteristics to save time. The scatterometric data that is used to find the value of the one or more parameter can be limited to those at wavelengths that are less sensitive to the underlying film characteristics. A model for a three-dimensional grating may be constructed by slicing a representative structure into a stack of slabs and creating an array of rectangular blocks to approximate each slab. One dimensional boundary problems may be solved for each block which are then matched to find a two-dimensional solution for the slab. A three-dimensional solution can then be constructed from the two-dimensional solutions for the slabs to yield the diffraction efficiencies of the three-dimensional grating. This model can then be used for finding the one or more parameters of the diffracting structure in scatterometry. Line roughness of a surface can be measured by directing a polarized incident beam in an incident plane normal to the line grating and measuring the cross-polarization coefficient. The value of the one or more parameters may then be supplied to a stepper or etcher to adjust a lithographic or etching process.

    摘要翻译: 不需要构建一个完整的多维查找表作为模型来查找散点图中的关键维度或其他参数,而是从参数的“最佳猜测”值开始采用回归或其他优化的估计方法。 预先计算的模型的特征值可以稍后存储并重用于具有某些共同特征的其他结构以节省时间。 用于查找一个或多个参数的值的散点数据可以限于那些对底层薄膜特性较不敏感的波长数据。 三维光栅的模型可以通过将代表性结构切片成一叠平板并且产生矩形块阵列来近似每个平板来构造。 可以为每个块解决一维边界问题,然后将其匹配以找到板的二维解。 然后可以从板的二维解决方案中构建三维解,以产生三维光栅的衍射效率。 然后,该模型可用于在散射测量中找到衍射结构的一个或多个参数。 可以通过将垂直于线光栅的入射平面中的偏振入射光束引导并测量交叉极化系数来测量表面的线粗糙度。 然后可以将一个或多个参数的值提供给步进器或蚀刻器以调整光刻或蚀刻工艺。

    Parametric profiling using optical spectroscopic systems to adjust processing parameter
    4.
    发明授权
    Parametric profiling using optical spectroscopic systems to adjust processing parameter 有权
    参数分析采用光谱系统调整处理参数

    公开(公告)号:US07312881B2

    公开(公告)日:2007-12-25

    申请号:US11343478

    申请日:2006-01-30

    IPC分类号: G01B11/28

    摘要: A gallery of seed profiles is constructed and the initial parameter values associated with the profiles are selected using manufacturing process knowledge of semiconductor devices. Manufacturing process knowledge may also be used to select the best seed profile and the best set of initial parameter values as the starting point of an optimization process whereby data associated with parameter values of the profile predicted by a model is compared to measured data in order to arrive at values of the parameters. Film layers over or under the periodic structure may also be taken into account. Different radiation parameters such as the reflectivities Rs, Rp and ellipsometric parameters may be used in measuring the diffracting structures and the associated films. Some of the radiation parameters may be more sensitive to a change in the parameter value of the profile or of the films then other radiation parameters. One or more radiation parameters that are more sensitive to such changes may be selected in the above-described optimization process to arrive at a more accurate measurement. The above-described techniques may be supplied to a track/stepper and etcher to control the lithographic and etching processes in order to compensate for any errors in the profile parameters.

    摘要翻译: 构建种子轮廓的画廊,并且使用半导体器件的制造工艺知识来选择与轮廓相关联的初始参数值。 也可以使用制造过程知识来选择最佳种子轮廓和最佳初始参数值集合作为优化过程的起始点,由此将与模型预测的轮廓的参数值相关联的数据与测量数据进行比较,以便 达到参数的值。 也可以考虑在周期性结构之上或之下的膜层。 不同的辐射参数,例如反射率R S,R P和椭偏参数可用于测量衍射结构和相关膜。 一些辐射参数可能对轮廓或膜的参数值的变化对其他辐射参数更敏感。 可以在上述优化过程中选择对这种变化更敏感的一个或多个辐射参数,以获得更准确的测量。 可以将上述技术提供给轨道/步进器和蚀刻器以控制光刻和蚀刻工艺,以便补偿轮廓参数中的任何误差。

    System for scatterometric measurements and applications
    5.
    发明授权
    System for scatterometric measurements and applications 有权
    散射测量和应用系统

    公开(公告)号:US07301649B2

    公开(公告)日:2007-11-27

    申请号:US11192056

    申请日:2005-07-27

    IPC分类号: G01B11/34 G01J4/00

    摘要: Instead of constructing a full multi-dimensional look-up-table as a model to find the critical dimension or other parameters in scatterometry, regression or other optimized estimation methods are employed starting from a “best guess” value of the parameter. Eigenvalues of models that are precalculated may be stored and reused later for other structures having certain common characteristics to save time. The scatterometric data that is used to find the value of the one or more parameter can be limited to those at wavelengths that are less sensitive to the underlying film characteristics. A model for a three-dimensional grating may be constructed by slicing a representative structure into a stack of slabs and creating an array of rectangular blocks to approximate each slab. One dimensional boundary problems may be solved for each block which are then matched to find a two-dimensional solution for the slab. A three-dimensional solution can then be constructed from the two-dimensional solutions for the slabs to yield the diffraction efficiencies of the three-dimensional grating. This model can then be used for finding the one or more parameters of the diffracting structure in scatterometry. Line roughness of a surface can be measured by directing a polarized incident beam in an incident plane normal to the line grating and measuring the cross-polarization coefficient. The value of the one or more parameters may then be supplied to a stepper or etcher to adjust a lithographic or etching process.

    摘要翻译: 不需要构建一个完整的多维查找表作为模型来查找散点图中的关键维度或其他参数,而是从参数的“最佳猜测”值开始采用回归或其他优化的估计方法。 预先计算的模型的特征值可以稍后存储并重用于具有某些共同特征的其他结构以节省时间。 用于查找一个或多个参数的值的散点数据可以限于那些对底层薄膜特性较不敏感的波长数据。 三维光栅的模型可以通过将代表性结构切片成一叠平板并且产生矩形块阵列来近似每个平板来构造。 可以为每个块解决一维边界问题,然后将其匹配以找到板的二维解。 然后可以从板的二维解决方案中构建三维解,以产生三维光栅的衍射效率。 然后,该模型可用于在散射测量中找到衍射结构的一个或多个参数。 可以通过将垂直于线光栅的入射平面中的偏振入射光束引导并测量交叉极化系数来测量表面的线粗糙度。 然后可以将一个或多个参数的值提供给步进器或蚀刻器以调整光刻或蚀刻工艺。

    System for scatterometric measurements and applications
    6.
    发明申请
    System for scatterometric measurements and applications 有权
    散射测量和应用系统

    公开(公告)号:US20050274901A1

    公开(公告)日:2005-12-15

    申请号:US11192056

    申请日:2005-07-27

    摘要: Instead of constructing a full multi-dimensional look-up-table as a model to find the critical dimension or other parameters in scatterometry, regression or other optimized estimation methods are employed starting from a “best guess” value of the parameter. Eigenvalues of models that are precalculated may be stored and reused later for other structures having certain common characteristics to save time. The scatterometric data that is used to find the value of the one or more parameter can be limited to those at wavelengths that are less sensitive to the underlying film characteristics. A model for a three-dimensional grating may be constructed by slicing a representative structure into a stack of slabs and creating an array of rectangular blocks to approximate each slab. One dimensional boundary problems may be solved for each block which are then matched to find a two-dimensional solution for the slab. A three-dimensional solution can then be constructed from the two-dimensional solutions for the slabs to yield the diffraction efficiencies of the three-dimensional grating. This model can then be used for finding the one or more parameters of the diffracting structure in scatterometry. Line roughness of a surface can be measured by directing a polarized incident beam in an incident plane normal to the line grating and measuring the cross-polarization coefficient. The value of the one or more parameters may then be supplied to a stepper or etcher to adjust a lithographic or etching process.

    摘要翻译: 不需要构建一个完整的多维查找表作为模型来查找散点图中的关键维度或其他参数,而是从参数的“最佳猜测”值开始采用回归或其他优化的估计方法。 预先计算的模型的特征值可以稍后存储并重用于具有某些共同特征的其他结构以节省时间。 用于查找一个或多个参数的值的散点数据可以限于那些对底层薄膜特性较不敏感的波长数据。 三维光栅的模型可以通过将代表性结构切片成一叠平板并且产生矩形块阵列来近似每个平板来构造。 可以为每个块解决一维边界问题,然后将其匹配以找到板的二维解。 然后可以从板的二维解决方案中构建三维解,以产生三维光栅的衍射效率。 然后,该模型可用于在散射测量中找到衍射结构的一个或多个参数。 可以通过将垂直于线光栅的入射平面中的偏振入射光束引导并测量交叉极化系数来测量表面的线粗糙度。 然后可以将一个或多个参数的值提供给步进器或蚀刻器以调整光刻或蚀刻工艺。

    Parametric profiling using optical spectroscopic systems
    7.
    发明授权
    Parametric profiling using optical spectroscopic systems 有权
    使用光谱系统进行参数分析

    公开(公告)号:US06900892B2

    公开(公告)日:2005-05-31

    申请号:US09741663

    申请日:2000-12-19

    摘要: A gallery of seed profiles is constructed and the initial parameter values associated with the profiles are selected using manufacturing process knowledge of semiconductor devices. Manufacturing process knowledge may also be used to select the best seed profile and the best set of initial parameter values as the starting point of an optimization process whereby data associated with parameter values of the profile predicted by a model is compared to measured data in order to arrive at values of the parameters. Film layers over or under the periodic structure may also be taken into account. Different radiation parameters such as the reflectivities RS, RP and ellipsometric parameters may be used in measuring the diffracting structures and the associated films. Some of the radiation parameters may be more sensitive to a change in the parameter value of the profile or of the films then other radiation parameters. One or more radiation parameters that are more sensitive to such changes may be selected in the above-described optimization process to arrive at a more accurate measurement. The above-described techniques may be supplied to a track/stepper and etcher to control the lithographic and etching processes in order to compensate for any errors in the profile parameters.

    摘要翻译: 构建种子轮廓的画廊,并且使用半导体器件的制造工艺知识来选择与轮廓相关联的初始参数值。 也可以使用制造过程知识来选择最佳种子轮廓和最佳初始参数值集合作为优化过程的起始点,由此将与模型预测的轮廓的参数值相关联的数据与测量数据进行比较,以便 达到参数的值。 也可以考虑在周期性结构之上或之下的膜层。 不同的辐射参数,例如反射率R S,R P和椭偏参数可用于测量衍射结构和相关膜。 一些辐射参数可能对轮廓或膜的参数值的变化对其他辐射参数更敏感。 可以在上述优化过程中选择对这种变化更敏感的一个或多个辐射参数,以获得更准确的测量。 可以将上述技术提供给轨道/步进器和蚀刻器以控制光刻和蚀刻工艺,以便补偿轮廓参数中的任何误差。

    Parametric profiling using optical spectroscopic systems
    8.
    发明授权
    Parametric profiling using optical spectroscopic systems 有权
    使用光谱系统进行参数分析

    公开(公告)号:US07826071B2

    公开(公告)日:2010-11-02

    申请号:US11868740

    申请日:2007-10-08

    IPC分类号: G01B11/14

    摘要: A gallery of seed profiles is constructed and the initial parameter values associated with the profiles are selected using manufacturing process knowledge of semiconductor devices. Manufacturing process knowledge may also be used to select the best seed profile and the best set of initial parameter values as the starting point of an optimization process whereby data associated with parameter values of the profile predicted by a model is compared to measured data in order to arrive at values of the parameters. Film layers over or under the periodic structure may also be taken into account. Different radiation parameters such as the reflectivities Rs, Rp and ellipsometric parameters may be used in measuring the diffracting structures and the associated films. Some of the radiation parameters may be more sensitive to a change in the parameter value of the profile or of the films then other radiation parameters. One or more radiation parameters that are more sensitive to such changes may be selected in the above-described optimization process to arrive at a more accurate measurement. The above-described techniques may be supplied to a track/stepper and etcher to control the lithographic and etching processes in order to compensate for any errors in the profile parameters.

    摘要翻译: 构建种子轮廓的画廊,并且使用半导体器件的制造工艺知识来选择与轮廓相关联的初始参数值。 也可以使用制造过程知识来选择最佳种子轮廓和最佳初始参数值集合作为优化过程的起始点,由此将与模型预测的轮廓的参数值相关联的数据与测量数据进行比较,以便 达到参数的值。 也可以考虑在周期性结构之上或之下的膜层。 可以使用诸如反射率Rs,Rp和椭偏参数的不同辐射参数来测量衍射结构和相关膜。 一些辐射参数可能对轮廓或膜的参数值的变化对其他辐射参数更敏感。 可以在上述优化过程中选择对这种变化更敏感的一个或多个辐射参数,以获得更准确的测量。 可以将上述技术提供给轨道/步进器和蚀刻器以控制光刻和蚀刻工艺,以便补偿轮廓参数中的任何误差。

    SYSTEM FOR SCATTEROMETRIC MEASUREMENTS AND APPLICATIONS
    9.
    发明申请
    SYSTEM FOR SCATTEROMETRIC MEASUREMENTS AND APPLICATIONS 有权
    SCATTERMETRIC测量和应用系统

    公开(公告)号:US20090195779A1

    公开(公告)日:2009-08-06

    申请号:US12410379

    申请日:2009-03-24

    IPC分类号: G01J4/00

    摘要: Instead of constructing a full multi-dimensional look-up-table as a model to find the critical dimension or other parameters in scatterometry, regression or other optimized estimation methods are employed starting from a “best guess” value of the parameter. Eigenvalues of models that are precalculated may be stored and reused later for other structures having certain common characteristics to save time. The scatterometric data that is used to find the value of the one or more parameter can be limited to those at wavelengths that are less sensitive to the underlying film characteristics. A model for a three-dimensional grating may be constructed by slicing a representative structure into a stack of slabs and creating an array of rectangular blocks to approximate each slab. One dimensional boundary problems may be solved for each block which are then matched to find a two-dimensional solution for the slab. A three-dimensional solution can then be constructed from the two-dimensional solutions for the slabs to yield the diffraction efficiencies of the three-dimensional grating. This model can then be used for finding the one or more parameters of the diffracting structure in scatterometry. Line roughness of a surface can be measured by directing a polarized incident beam in an incident plane normal to the line grating and measuring the cross-polarization coefficient. The value of the one or more parameters may then be supplied to a stepper or etcher to adjust a lithographic or etching process.

    摘要翻译: 不需要构建一个完整的多维查找表作为模型来查找散点图中的关键维度或其他参数,而是从参数的“最佳猜测”值开始采用回归或其他优化的估计方法。 预先计算的模型的特征值可以稍后存储并重用于具有某些共同特征的其他结构以节省时间。 用于查找一个或多个参数的值的散点数据可以限于那些对底层薄膜特性较不敏感的波长数据。 三维光栅的模型可以通过将代表性结构切片成一叠平板并且产生矩形块阵列来近似每个平板来构造。 可以为每个块解决一维边界问题,然后将其匹配以找到板的二维解。 然后可以从板的二维解决方案中构建三维解,以产生三维光栅的衍射效率。 然后,该模型可用于在散射测量中找到衍射结构的一个或多个参数。 可以通过将垂直于线光栅的入射平面中的偏振入射光束引导并测量交叉极化系数来测量表面的线粗糙度。 然后可以将一个或多个参数的值提供给步进器或蚀刻器以调整光刻或蚀刻工艺。

    System for Scatterometric Measurements and Applications
    10.
    发明申请
    System for Scatterometric Measurements and Applications 有权
    散射测量和应用系统

    公开(公告)号:US20080084567A1

    公开(公告)日:2008-04-10

    申请号:US11945949

    申请日:2007-11-27

    IPC分类号: G01B9/02 G01B11/24 G01J4/00

    摘要: Instead of constructing a full multi-dimensional look-up-table as a model to find the critical dimension or other parameters in scatterometry, regression or other optimized estimation methods are employed starting from a “best guess” value of the parameter. Eigenvalues of models that are precalculated may be stored and reused later for other structures having certain common characteristics to save time. The scatterometric data that is used to find the value of the one or more parameter can be limited to those at wavelengths that are less sensitive to the underlying film characteristics. A model for a three-dimensional grating may be constructed by slicing a representative structure into a stack of slabs and creating an array of rectangular blocks to approximate each slab. One dimensional boundary problems may be solved for each block which are then matched to find a two-dimensional solution for the slab. A three-dimensional solution can then be constructed from the two-dimensional solutions for the slabs to yield the diffraction efficiencies of the three-dimensional grating. This model can then be used for finding the one or more parameters of the diffracting structure in scatterometry. Line roughness of a surface can be measured by directing a polarized incident beam in an incident plane normal to the line grating and measuring the cross-polarization coefficient. The value of the one or more parameters may then be supplied to a stepper or etcher to adjust a lithographic or etching process.

    摘要翻译: 不需要构建一个完整的多维查找表作为模型来查找散点图中的关键维度或其他参数,而是从参数的“最佳猜测”值开始采用回归或其他优化的估计方法。 预先计算的模型的特征值可以稍后存储并重用于具有某些共同特征的其他结构以节省时间。 用于查找一个或多个参数的值的散点数据可以限于那些对底层薄膜特性较不敏感的波长数据。 三维光栅的模型可以通过将代表性结构切片成一叠平板并且产生矩形块阵列来近似每个平板来构造。 可以为每个块解决一维边界问题,然后将其匹配以找到板的二维解。 然后可以从板的二维解决方案中构建三维解,以产生三维光栅的衍射效率。 然后,该模型可用于在散射测量中找到衍射结构的一个或多个参数。 可以通过将垂直于线光栅的入射平面中的偏振入射光束引导并测量交叉极化系数来测量表面的线粗糙度。 然后可以将一个或多个参数的值提供给步进器或蚀刻器以调整光刻或蚀刻工艺。