CO2 sensor based on a diamond field effect transistor
    3.
    发明授权
    CO2 sensor based on a diamond field effect transistor 有权
    基于金刚石场效应晶体管的二氧化碳传感器

    公开(公告)号:US09291594B2

    公开(公告)日:2016-03-22

    申请号:US14573221

    申请日:2014-12-17

    CPC classification number: G01N27/4141 G01N33/004

    Abstract: The present disclosure relates to a carbon dioxide sensor able to function in harsh environment, conditions. The carbon dioxide sensor can include a gate-less field effect transistor including a synthetic, quasi-intrinsic, hydrogen-passivated, single-crystal diamond layer exhibiting a 2-dimension hole gas effect, and a sensing layer comprising both a polymer and a hygroscopic material deposited onto a surface of the gate-less field effect transistor.

    Abstract translation: 本公开涉及能够在恶劣环境,条件下起作用的二氧化碳传感器。 二氧化碳传感器可以包括无栅极场效应晶体管,其包括表现出二维空穴效应的合成的准本征的,氢钝化的单晶金刚石层,以及包含聚合物和吸湿性的感测层 沉积在无栅极场效应晶体管的表面上的材料。

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