Abstract:
An elastic wave resonator includes an interdigital transducer electrode provided on a piezoelectric substrate and including a first electrode layer made of Al or an alloy with Al as its primary component and including a first main surface on a side where the piezoelectric substrate is located and a second main surface on the opposite side from the first main surface. An SH wave is used as a propagated elastic wave. When a resonant frequency of the elastic wave resonator is fr and an anti-resonant frequency of the elastic wave resonator is fa, a minimum value of an absolute value of a distortion component in the first main surface calculated through a two-dimensional finite element method is about 1.4×10−3 or less at a frequency f expressed as: f=fr+0.06×bw, where bw is fa−fr.
Abstract:
Provided is a bulk acoustic wave resonator (BAWR). The BAWR may include an air cavity disposed on a substrate, a bulk acoustic wave resonant unit including a piezoelectric layer, and a reflective layer to reflect a wave of a resonant frequency that is generated from the piezoelectric layer.
Abstract:
A piezoelectric transformer includes a piezoelectric element. Two primary side electrodes exist on the primary side of the piezoelectric element. The primary side electrodes are coupled by a resistor formed from a conductive coating. A discharge current is discharged via the resistor to protect a semiconductor component from the discharge current. Since neither a short-circuit terminal nor conductive jig is required, electrostatic discharge damage to a semiconductor component can be prevented by a low-cost arrangement.
Abstract:
A piezoelectric transformer that includes a piezoelectric body having driving portions and a power generating portion, an input electrode, and an output electrode. The driving portions and the power generating portion are arranged in the lengthwise direction of the piezoelectric body. The driving portions are disposed symmetrically relative to a plane that passes through a center of the piezoelectric body in the lengthwise direction and is orthogonal to the lengthwise direction, occupy no less than half of the regions in the piezoelectric body, and are include two or more adjacent polarized regions.
Abstract:
An elastic wave device in which a recess is provided on an upper side of a support, a piezoelectric thin film covers the recess, and an IDT electrode is provided on an upper surface of the piezoelectric thin film. A plate wave of an S0 mode or SH0 mode is used. A plurality of grooves are provided in the upper surface or lower surface of the piezoelectric thin film at a portion of the piezoelectric thin film that is positioned on a hollow section.
Abstract:
A resonator element for use in a filter is provided. The resonator element includes a first resonator acoustically coupled to a second resonator. The first resonator has terminals for incorporation in a filter structure. A tuning circuit is coupled to the second resonator to enable tuning of the resonator element.
Abstract:
A zero power radio frequency (RF) activated wake up device is provided. The device is based on a high-Q MEMS demodulator that filters an amplitude-modulated RF tone of interest from the entire spectrum while producing a much higher voltage signal suitable to trigger a high-Q MEMS resonant switch tuned to the modulation frequency of the RF tone.
Abstract:
A piezoelectronic transistor device includes a first piezoelectric (PE) layer, a second PE layer, and a piezoresistive (PR) layer arranged in a stacked configuration, wherein an electrical resistance of the PR layer is dependent upon an applied voltage across the first and second PE layers by an applied pressure to the PR layer by the first and second PE layers. A piezoelectronic logic device includes a first and second piezoelectric transistor (PET), wherein the first and second PE layers of the first PET have a smaller cross sectional area than those of the second PET, such that a voltage drop across the PE layers of the first PET creates a first pressure in the PR layer of the first PET that is smaller than a second pressure in the PR layer of the second PET created by the same voltage drop across the PE layers of the second PET.
Abstract:
A direct current (DC)-alternating current (AC) power convertor is disclosed. The DC-AC power converting circuit may include an inverter configured to convert the DC power into first output power, a piezoelectric transforming unit including piezoelectric transformers connected in parallel to an output terminal of the inverter, and each piezoelectric transformer of the piezoelectric transformers configured to transform the first output power to second output power, and an output configured to add the second output power output from the each of the piezoelectric transformer and to output AC power, wherein each piezoelectric transformer has a resonance frequency.
Abstract:
A piezoelectronic transistor device includes a first piezoelectric (PE) layer, a second PE layer, and a piezoresistive (PR) layer arranged in a stacked configuration, wherein an electrical resistance of the PR layer is dependent upon an applied voltage across the first and second PE layers by an applied pressure to the PR layer by the first and second PE layers. A piezoelectronic logic device includes a first and second piezoelectric transistor (PET), wherein the first and second PE layers of the first PET have a smaller cross sectional area than those of the second PET, such that a voltage drop across the PE layers of the first PET creates a first pressure in the PR layer of the first PET that is smaller than a second pressure in the PR layer of the second PET created by the same voltage drop across the PE layers of the second PET.