公开(公告)号：US10680171B2

公开(公告)日：2020-06-09

申请号：US16262841

申请日：2019-01-30

Applicant: HEFEI RELIANCE MEMORY LIMITED

Inventor： Darrell Rinerson ,  Christophe J. Chevallier ,  Wayne Kinney ,  Roy Lambertson ,  John E. Sanchez, Jr. ,  Lawrence Schloss ,  Philip Swab ,  Edmond Ward

IPC: H01L45/00 ,  G11C11/56 ,  G11C13/00 ,  H01L27/24 ,  G06F30/30

Abstract: A memory using mixed valence conductive oxides is disclosed. The memory includes a mixed valence conductive oxide that is less conductive in its oxygen deficient state and a mixed electronic ionic conductor that is an electrolyte to oxygen and promotes an electric filed to cause oxygen ionic motion.

公开(公告)号：US11672189B2

公开(公告)日：2023-06-06

申请号：US17194609

申请日：2021-03-08

Applicant: HEFEI RELIANCE MEMORY LIMITED

Inventor： Darrell Rinerson ,  Christophe J. Chevallier ,  Wayne Kinney ,  Roy Lambertson ,  John E. Sanchez, Jr. ,  Lawrence Schloss ,  Philip Swab ,  Edmond Ward

IPC: H10N70/20 ,  G11C11/56 ,  G11C13/00 ,  H10N70/00 ,  H10B63/00 ,  G06F30/30 ,  H01L45/00 ,  H01L27/24

CPC classification number: H01L45/08 ,  G06F30/30 ,  G11C11/5685 ,  G11C13/004 ,  G11C13/0007 ,  G11C13/0009 ,  G11C13/0069 ,  H01L27/2436 ,  H01L27/2481 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1625 ,  G11C2013/005 ,  G11C2013/009 ,  G11C2013/0045 ,  G11C2213/11 ,  G11C2213/31 ,  G11C2213/32 ,  G11C2213/53 ,  G11C2213/54 ,  G11C2213/56 ,  G11C2213/71 ,  G11C2213/79

Abstract: A memory using mixed valence conductive oxides is disclosed. The memory includes a mixed valence conductive oxide that is less conductive in its oxygen deficient state and a mixed electronic ionic conductor that is an electrolyte to oxygen and promotes an electric filed to cause oxygen ionic motion.

公开(公告)号：US11063214B2

公开(公告)日：2021-07-13

申请号：US16864051

申请日：2020-04-30

Applicant: HEFEI RELIANCE MEMORY LIMITED

Inventor： Darrell Rinerson ,  Christophe J. Chevallier ,  Wayne Kinney ,  Roy Lambertson ,  John E. Sanchez, Jr. ,  Lawrence Schloss ,  Philip Swab ,  Edmond Ward

IPC: H01L45/00 ,  G11C11/56 ,  G11C13/00 ,  H01L27/24 ,  G06F30/30

Abstract: A memory using mixed valence conductive oxides is disclosed. The memory includes a mixed valence conductive oxide that is less conductive in its oxygen deficient state and a mixed electronic ionic conductor that is an electrolyte to oxygen and promotes an electric filed to cause oxygen ionic motion.

公开(公告)号：US10224480B2

公开(公告)日：2019-03-05

申请号：US15797452

申请日：2017-10-30

Applicant: Hefei Reliance Memory Limited

Inventor： Darrell Rinerson ,  Christophe J. Chevallier ,  Wayne Kinney ,  Roy Lambertson ,  John E. Sanchez, Jr. ,  Lawrence Schloss ,  Philip Swab ,  Edmond Ward

IPC: H01L45/00 ,  G06F17/50 ,  G11C11/56 ,  G11C13/00 ,  H01L27/24

Abstract: A memory using mixed valence conductive oxides is disclosed. The memory includes a mixed valence conductive oxide that is less conductive in its oxygen deficient state and a mixed electronic ionic conductor that is an electrolyte to oxygen and promotes an electric filed to cause oxygen ionic motion.