知搜-全球专利检索

  1. Login
  2. Sign Up

Search Results

15 records (took 0.017 seconds)

    SOLID STATE IMAGING DEVICE
    1.
    发明申请
    SOLID STATE IMAGING DEVICE 审中-公开

    公开(公告)号：US20200212098A1

    公开(公告)日：2020-07-02

    申请号：US16643110

    申请日：2018-07-19

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Shin-ichiro TAKAGI ,  Mitsuhito MASE ,  Jun HIRAMITSU ,  Yasuhito YONETA ,  Masaharu MURAMATSU

    IPC: H01L27/148

    Abstract: The photosensitive region includes a first impurity region and a second impurity region having a higher impurity concentration than that of the first impurity region. The photosensitive region includes one end positioned away from the transfer section in the second direction and another end positioned closer to the transfer section in the second direction. A shape of the second impurity region in plan view is line-symmetric with respect to a center line of the photosensitive region along the second direction. A width of the second impurity region in the first direction increases in a transfer direction from the one end to the other end. An increase rate of the width of the second impurity region in each of sections, obtained by dividing the photosensitive region into n sections in the second direction, becomes gradually higher in the transfer direction. Here, n is an integer of two or more.

    SOLID STATE IMAGING DEVICE
    2.
    发明申请
    SOLID STATE IMAGING DEVICE 有权

    公开(公告)号：US20210305312A1

    公开(公告)日：2021-09-30

    申请号：US17344228

    申请日：2021-06-10

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Shin-ichiro TAKAGI ,  Yasuhito YONETA ,  Masaharu MURAMATSU

    IPC: H01L27/148 ,  H04N5/372

    Abstract: A first region includes a plurality of first transfer column regions distributed in a first direction. A second region includes a plurality of second transfer column regions distributed in the first direction. The second region is positioned downstream of the first region in a charge transfer direction in the second transfer section. Lengths in a second direction of the plurality of first transfer column regions are equal. Lengths in the second direction of the plurality of second transfer column regions are longer than the length of the first transfer column region, and increase as the second transfer column region is positioned downstream in the charge transfer direction. A third region is disposed to correspond to the first region and extends along the first direction. A fourth region is disposed to correspond to the second region and extends such that an interval between the fourth region and a pixel region in the second direction increases in the charge transfer direction in response to a change in the lengths of the plurality of second transfer column regions.

    SOLID STATE IMAGING DEVICE
    3.
    发明申请
    SOLID STATE IMAGING DEVICE 审中-公开

    公开(公告)号：US20200212097A1

    公开(公告)日：2020-07-02

    申请号：US16643102

    申请日：2018-07-19

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Shin-ichiro TAKAGI ,  Yasuhito YONETA ,  Masaharu MURAMATSU

    IPC: H01L27/148 ,  H04N5/372

    Abstract: A first region includes first transfer column regions distributed in a first direction. A second region includes second transfer column regions distributed in the first direction. The second region is positioned downstream of the first region in a charge transfer direction. Lengths in a second direction of the first transfer column regions are equal. Lengths in the second direction of the second transfer column regions are longer than the length of the first transfer column region, and increase as the second transfer column region is positioned downstream in the charge transfer direction. A third region is disposed to correspond to the first region and extends along the first direction. A fourth region is disposed to correspond to the second region and extends such that an interval between the fourth region and a pixel region increases in response to a change in the lengths of the second transfer column regions.

    SOLID-STATE IMAGING ELEMENT
    4.
    发明申请
    SOLID-STATE IMAGING ELEMENT 有权

    公开(公告)号：US20250160027A1

    公开(公告)日：2025-05-15

    申请号：US18839132

    申请日：2022-12-09

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Fumiya TANAKA ,  Atsunori YAMADA ,  Shin-ichiro TAKAGI ,  Yasuhito YONETA

    IPC: H10F39/00 ,  H04N25/71 ,  H04N25/772 ,  H04N25/778

    Abstract: A solid-state imaging element includes a semiconductor substrate, a first element unit, and a second element unit. The first element unit includes a light receiving part that generates charges, and a transfer part that transfers a charges. The transfer part includes a first transfer electrode and a second transfer electrode aligned in a transfer direction of the charges, and a discharge gate electrode disposed over a charge discharge region of the semiconductor substrate along the charge transfer region. The first transfer electrode is formed as a first layer, and the second transfer electrode and the discharge gate electrode are formed as second layers. The first transfer electrode includes a portion overlapping a part of the second transfer electrode and a portion overlapping a part of the discharge gate electrode. The second transfer electrode is spaced apart from the discharge gate electrode.

    BACKSIDE INCIDENCE TYPE SOLID-STATE IMAGE PICKUP DEVICE
    6.
    发明申请
    BACKSIDE INCIDENCE TYPE SOLID-STATE IMAGE PICKUP DEVICE 审中-公开

    公开(公告)号：US20170301722A1

    公开(公告)日：2017-10-19

    申请号：US15505993

    申请日：2015-08-04

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Shin-ichiro TAKAGI ,  Kentaro MAETA ,  Yasuhito YONETA ,  Hisanori SUZUKI ,  Masaharu MURAMATSU

    IPC: H01L27/148 ,  H01L27/146

    Abstract: A back-illuminated solid-state imaging device includes a semiconductor substrate, a shift register, and a light-shielding film. The semiconductor substrate includes a light incident surface on the back side and a light receiving portion generating a charge in accordance with light incidence. The shift register is disposed on the side of a light-detective surface opposite to the light incident surface of the semiconductor substrate. The light-shielding film is disposed on the side of the light-detective surface of the semiconductor substrate. The light-shielding film includes an uneven surface opposing the light-detective surface.

    SOLID STATE IMAGING DEVICE
    7.
    发明公开
    SOLID STATE IMAGING DEVICE 审中-公开

    公开(公告)号：US20240170528A1

    公开(公告)日：2024-05-23

    申请号：US18428396

    申请日：2024-01-31

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Shin-ichiro TAKAGI ,  Mitsuhito Mase ,  Jun Hiramitsu ,  Yasuhito Yoneta ,  Masaharu Muramatsu

    IPC: H01L27/148 ,  H01L27/146 ,  H04N25/71 ,  H04N25/73

    CPC classification number: H01L27/14843 ,  H01L27/14603 ,  H01L27/14607 ,  H01L27/14812 ,  H04N25/71 ,  H01L27/14831 ,  H04N25/73

    Abstract: The photosensitive region includes a first impurity region and a second impurity region having a higher impurity concentration than that of the first impurity region. The photosensitive region includes one end positioned away from the transfer section in the second direction and another end positioned closer to the transfer section in the second direction. A shape of the second impurity region in plan view is line-symmetric with respect to a center line of the photosensitive region along the second direction. A width of the second impurity region in the first direction increases in a transfer direction from the one end to the other end. An increase rate of the width of the second impurity region in each of sections, obtained by dividing the photosensitive region into n sections in the second direction, becomes gradually higher in the transfer direction. Here, n is an integer of two or more.

    PHOTOELECTRIC CONVERSION DEVICE
    8.
    发明公开
    PHOTOELECTRIC CONVERSION DEVICE 审中-公开

    公开(公告)号：US20240030270A1

    公开(公告)日：2024-01-25

    申请号：US18039797

    申请日：2021-10-14

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Shin-ichiro TAKAGI ,  Atsunori YAMADA

    IPC: H01L27/148 ,  H01L27/146

    CPC classification number: H01L27/14818 ,  H01L27/1464

    Abstract: A transfer part of a photoelectric conversion device includes a first transfer region configured to transfer electric charge along a first line, a second transfer region configured to transfer the electric charge along a second line, a third transfer region configured to transfer the electric charge along a third line, a first transfer electrode, and a second transfer electrode. The third line is deviated from at least one of the first line and the second line. The third transfer region includes a first semiconductor region having a first impurity concentration, and a second semiconductor region having a second impurity concentration higher than the first impurity concentration. The second semiconductor region extends along the third line to be widened on the second transfer region side. The first semiconductor region is disposed on both sides of the second semiconductor region.

    OPTICAL SENSOR
    9.
    发明公开
    OPTICAL SENSOR 审中-公开

    公开(公告)号：US20230387149A1

    公开(公告)日：2023-11-30

    申请号：US18027730

    申请日：2021-10-08

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Mitsuhito MASE ,  Ryo TAKIGUCHI ,  Hiroaki ISHII ,  Masaru NAKANO ,  Shin-ichiro TAKAGI

    IPC: H01L27/146 ,  H01L31/107 ,  H01L31/0224

    CPC classification number: H01L27/14609 ,  H01L27/14643 ,  H01L31/107 ,  H01L31/022408

    Abstract: Provided is an optical sensor including: a charge generation region that generates charges in response to incident light; a charge collection region to which charges generated in the charge generation region are transferred; and at least one transfer gate electrode disposed on a transfer region between the charge generation region and the charge collection region. The charge generation region includes an avalanche multiplication region that causes avalanche multiplication, and a gradient potential energy formation region that forms gradient potential energy that is gradient so that potential energy becomes lower as approaching the transfer region in the charge generation region.

Patent Agency Ranking