公开(公告)号：US20250160027A1

公开(公告)日：2025-05-15

申请号：US18839132

申请日：2022-12-09

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Fumiya TANAKA ,  Atsunori YAMADA ,  Shin-ichiro TAKAGI ,  Yasuhito YONETA

IPC: H10F39/00 ,  H04N25/71 ,  H04N25/772 ,  H04N25/778

Abstract: A solid-state imaging element includes a semiconductor substrate, a first element unit, and a second element unit. The first element unit includes a light receiving part that generates charges, and a transfer part that transfers a charges. The transfer part includes a first transfer electrode and a second transfer electrode aligned in a transfer direction of the charges, and a discharge gate electrode disposed over a charge discharge region of the semiconductor substrate along the charge transfer region. The first transfer electrode is formed as a first layer, and the second transfer electrode and the discharge gate electrode are formed as second layers. The first transfer electrode includes a portion overlapping a part of the second transfer electrode and a portion overlapping a part of the discharge gate electrode. The second transfer electrode is spaced apart from the discharge gate electrode.

公开(公告)号：US20250160028A1

公开(公告)日：2025-05-15

申请号：US18839510

申请日：2022-12-09

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Shin-ichiro TAKAGI ,  Fumiya TANAKA ,  Atsunori YAMADA ,  Yasuhito YONETA

IPC: H10F39/00

Abstract: A solid-state imaging element includes a semiconductor substrate, a first element unit, and a second element unit. The first element unit includes a light receiving part and a transfer part, and the second element unit includes a capacitance part. The transfer part includes a first transfer electrode, a second transfer electrode, and an insulating layer. The capacitance part includes a first capacitance electrode and a second capacitance electrode that overlap each other, and an insulating layer. A part of the first transfer electrode overlaps a part of the second transfer electrode. The insulating layer includes a first portion positioned between a part of the first transfer electrode and a part of the second transfer electrode. The insulating layer includes a second portion positioned between the first capacitance electrode and the second capacitance electrode. A thickness of the first portion is larger than a thickness of the second portion.

公开(公告)号：US20240030270A1

公开(公告)日：2024-01-25

申请号：US18039797

申请日：2021-10-14

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Shin-ichiro TAKAGI ,  Atsunori YAMADA

IPC: H01L27/148 ,  H01L27/146

CPC classification number: H01L27/14818 ,  H01L27/1464

Abstract: A transfer part of a photoelectric conversion device includes a first transfer region configured to transfer electric charge along a first line, a second transfer region configured to transfer the electric charge along a second line, a third transfer region configured to transfer the electric charge along a third line, a first transfer electrode, and a second transfer electrode. The third line is deviated from at least one of the first line and the second line. The third transfer region includes a first semiconductor region having a first impurity concentration, and a second semiconductor region having a second impurity concentration higher than the first impurity concentration. The second semiconductor region extends along the third line to be widened on the second transfer region side. The first semiconductor region is disposed on both sides of the second semiconductor region.