公开(公告)号：US20250160027A1

公开(公告)日：2025-05-15

申请号：US18839132

申请日：2022-12-09

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Fumiya TANAKA ,  Atsunori YAMADA ,  Shin-ichiro TAKAGI ,  Yasuhito YONETA

IPC: H10F39/00 ,  H04N25/71 ,  H04N25/772 ,  H04N25/778

Abstract: A solid-state imaging element includes a semiconductor substrate, a first element unit, and a second element unit. The first element unit includes a light receiving part that generates charges, and a transfer part that transfers a charges. The transfer part includes a first transfer electrode and a second transfer electrode aligned in a transfer direction of the charges, and a discharge gate electrode disposed over a charge discharge region of the semiconductor substrate along the charge transfer region. The first transfer electrode is formed as a first layer, and the second transfer electrode and the discharge gate electrode are formed as second layers. The first transfer electrode includes a portion overlapping a part of the second transfer electrode and a portion overlapping a part of the discharge gate electrode. The second transfer electrode is spaced apart from the discharge gate electrode.

公开(公告)号：US20250160028A1

公开(公告)日：2025-05-15

申请号：US18839510

申请日：2022-12-09

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Shin-ichiro TAKAGI ,  Fumiya TANAKA ,  Atsunori YAMADA ,  Yasuhito YONETA

IPC: H10F39/00

Abstract: A solid-state imaging element includes a semiconductor substrate, a first element unit, and a second element unit. The first element unit includes a light receiving part and a transfer part, and the second element unit includes a capacitance part. The transfer part includes a first transfer electrode, a second transfer electrode, and an insulating layer. The capacitance part includes a first capacitance electrode and a second capacitance electrode that overlap each other, and an insulating layer. A part of the first transfer electrode overlaps a part of the second transfer electrode. The insulating layer includes a first portion positioned between a part of the first transfer electrode and a part of the second transfer electrode. The insulating layer includes a second portion positioned between the first capacitance electrode and the second capacitance electrode. A thickness of the first portion is larger than a thickness of the second portion.