公开(公告)号：US20180286901A1

公开(公告)日：2018-10-04

申请号：US15764492

申请日：2016-07-11

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Masaharu MURAMATSU ,  Hisanori SUZUKI ,  Yasuhito YONETA ,  Shinya OTSUKA ,  Hirotaka TAKAHASHI

IPC: H01L27/146 ,  H04N5/369 ,  H01L31/02

CPC classification number: H01L27/1464 ,  H01L27/146 ,  H01L27/1462 ,  H01L31/02 ,  H04N5/369

Abstract: A back-illuminated solid-state imaging element includes a semiconductor substrate which has a front surface and a back surface provided with a recess, and in which a thinned section, which is a bottom section of the recess, is an imaging area, a signal read-out circuit formed on the front surface of the semiconductor substrate, a boron layer formed on at least the back surface of the semiconductor substrate and a lateral surface of the recess, a metal layer formed on the boron layer, and provided with an opening opposing a bottom surface of the recess, and an anti-reflection layer formed on the bottom surface of the recess.

公开(公告)号：US20220344520A1

公开(公告)日：2022-10-27

申请号：US17762847

申请日：2020-08-28

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Masaharu MURAMATSU ,  Yasuhito YONETA ,  Hiroya KOBAYASHI ,  Tetsuya ABE ,  Kenichiro TANIGUCHI

IPC: H01L31/02 ,  H01L27/146 ,  H01L31/0203

Abstract: The photodetector includes a light receiving element and a package. The package has an accommodation member formed of a ceramic, a wiring including a pad connected to a terminal of the light receiving element by a wire, and a light transmitting member. A bottom wall of the accommodation member has a placement surface to which the light receiving element is attached by an adhesive member. The bottom wall or a side wall of the accommodation member has a pad surface on which the pad is disposed, the pad surface positioned on an opening side of the accommodation member with respect to the placement surface. The side wall has a through hole. At least a portion of an inner end portion of the through hole is positioned on the opening side with respect to a surface of the light receiving element on the opening side.

公开(公告)号：US20200212098A1

公开(公告)日：2020-07-02

申请号：US16643110

申请日：2018-07-19

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Shin-ichiro TAKAGI ,  Mitsuhito MASE ,  Jun HIRAMITSU ,  Yasuhito YONETA ,  Masaharu MURAMATSU

IPC: H01L27/148

Abstract: The photosensitive region includes a first impurity region and a second impurity region having a higher impurity concentration than that of the first impurity region. The photosensitive region includes one end positioned away from the transfer section in the second direction and another end positioned closer to the transfer section in the second direction. A shape of the second impurity region in plan view is line-symmetric with respect to a center line of the photosensitive region along the second direction. A width of the second impurity region in the first direction increases in a transfer direction from the one end to the other end. An increase rate of the width of the second impurity region in each of sections, obtained by dividing the photosensitive region into n sections in the second direction, becomes gradually higher in the transfer direction. Here, n is an integer of two or more.

公开(公告)号：US20210305312A1

公开(公告)日：2021-09-30

申请号：US17344228

申请日：2021-06-10

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Shin-ichiro TAKAGI ,  Yasuhito YONETA ,  Masaharu MURAMATSU

IPC: H01L27/148 ,  H04N5/372

Abstract: A first region includes a plurality of first transfer column regions distributed in a first direction. A second region includes a plurality of second transfer column regions distributed in the first direction. The second region is positioned downstream of the first region in a charge transfer direction in the second transfer section. Lengths in a second direction of the plurality of first transfer column regions are equal. Lengths in the second direction of the plurality of second transfer column regions are longer than the length of the first transfer column region, and increase as the second transfer column region is positioned downstream in the charge transfer direction. A third region is disposed to correspond to the first region and extends along the first direction. A fourth region is disposed to correspond to the second region and extends such that an interval between the fourth region and a pixel region in the second direction increases in the charge transfer direction in response to a change in the lengths of the plurality of second transfer column regions.

公开(公告)号：US20200212097A1

公开(公告)日：2020-07-02

申请号：US16643102

申请日：2018-07-19

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Shin-ichiro TAKAGI ,  Yasuhito YONETA ,  Masaharu MURAMATSU

IPC: H01L27/148 ,  H04N5/372

Abstract: A first region includes first transfer column regions distributed in a first direction. A second region includes second transfer column regions distributed in the first direction. The second region is positioned downstream of the first region in a charge transfer direction. Lengths in a second direction of the first transfer column regions are equal. Lengths in the second direction of the second transfer column regions are longer than the length of the first transfer column region, and increase as the second transfer column region is positioned downstream in the charge transfer direction. A third region is disposed to correspond to the first region and extends along the first direction. A fourth region is disposed to correspond to the second region and extends such that an interval between the fourth region and a pixel region increases in response to a change in the lengths of the second transfer column regions.

公开(公告)号：US20250160027A1

公开(公告)日：2025-05-15

申请号：US18839132

申请日：2022-12-09

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Fumiya TANAKA ,  Atsunori YAMADA ,  Shin-ichiro TAKAGI ,  Yasuhito YONETA

IPC: H10F39/00 ,  H04N25/71 ,  H04N25/772 ,  H04N25/778

Abstract: A solid-state imaging element includes a semiconductor substrate, a first element unit, and a second element unit. The first element unit includes a light receiving part that generates charges, and a transfer part that transfers a charges. The transfer part includes a first transfer electrode and a second transfer electrode aligned in a transfer direction of the charges, and a discharge gate electrode disposed over a charge discharge region of the semiconductor substrate along the charge transfer region. The first transfer electrode is formed as a first layer, and the second transfer electrode and the discharge gate electrode are formed as second layers. The first transfer electrode includes a portion overlapping a part of the second transfer electrode and a portion overlapping a part of the discharge gate electrode. The second transfer electrode is spaced apart from the discharge gate electrode.

公开(公告)号：US20210057477A1

公开(公告)日：2021-02-25

申请号：US16963291

申请日：2018-11-27

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Shin-ichiro TAKAGI ,  Yasuhito YONETA ,  Masaharu MURAMATSU ,  Nao INOUE ,  Hirokazu YAMAMOTO ,  Shinichi NAKATA ,  Takuo KOYAMA

IPC: H01L27/146 ,  H01L23/00 ,  H01L23/31 ,  H01L21/56

Abstract: A semiconductor device includes a support body including a mount region, a semiconductor chip disposed on the mount region with a predetermined distance therebetween, a bump disposed between the support body and the semiconductor chip, a wall portion disposed between the support body and the semiconductor chip along a part of an outer edge of the semiconductor chip, and an underfill resin layer disposed between the support body and the semiconductor chip. The underfill resin layer covers an outer side surface of the wall portion.

公开(公告)号：US20190080911A1

公开(公告)日：2019-03-14

申请号：US15765536

申请日：2016-09-01

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Masaharu MURAMATSU ,  Hisanori SUZUKI ,  Yasuhito YONETA ,  Shinya OTSUKA ,  Hirotaka TAKAHASHI

IPC: H01L21/285 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/14 ,  H01L23/522

Abstract: Provided is a wiring structural body provided with a wiring pattern including a through-wiring pattern, the wiring structural body including: a silicon substrate having a through hole in which the through-wiring pattern is disposed; an insulating layer provided on a surface of the silicon substrate including an inner surface of the through hole along at least the wiring pattern; a boron layer provided on the insulating layer along the wiring pattern; and a metal layer provided on the boron layer.

公开(公告)号：US20180286752A1

公开(公告)日：2018-10-04

申请号：US16000603

申请日：2018-06-05

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yasuhito YONETA ,  Ryoto TAKISAWA ,  Shingo ISHIHARA ,  Hisanori SUZUKI ,  Masaharu MURAMATSU

IPC: H01L21/77 ,  H01L27/146 ,  H04N5/369

Abstract: A method for manufacturing a solid-state imaging device comprises a first step of preparing an imaging element having a second principal surface having an electrode arranged thereon, and a photoelectric converter part configured to photoelectrically convert the incident energy line so as to generate a signal charge; a second step of preparing a support substrate, provided with a through hole extending in a thickness direction thereof, having a third principal surface; a third step of aligning the imaging element and the support substrate with each other so that the electrode is exposed out of the through hole while the second and third principal surfaces oppose each other and joining the imaging element and the support substrate to each other; and a fourth step of arranging a conductive ball-shaped member in the through hole and electrically connecting the ball-shaped member to the electrode after the third step.

公开(公告)号：US20170301722A1

公开(公告)日：2017-10-19

申请号：US15505993

申请日：2015-08-04

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Shin-ichiro TAKAGI ,  Kentaro MAETA ,  Yasuhito YONETA ,  Hisanori SUZUKI ,  Masaharu MURAMATSU

IPC: H01L27/148 ,  H01L27/146

Abstract: A back-illuminated solid-state imaging device includes a semiconductor substrate, a shift register, and a light-shielding film. The semiconductor substrate includes a light incident surface on the back side and a light receiving portion generating a charge in accordance with light incidence. The shift register is disposed on the side of a light-detective surface opposite to the light incident surface of the semiconductor substrate. The light-shielding film is disposed on the side of the light-detective surface of the semiconductor substrate. The light-shielding film includes an uneven surface opposing the light-detective surface.