公开(公告)号：US20180286752A1

公开(公告)日：2018-10-04

申请号：US16000603

申请日：2018-06-05

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yasuhito YONETA ,  Ryoto TAKISAWA ,  Shingo ISHIHARA ,  Hisanori SUZUKI ,  Masaharu MURAMATSU

IPC: H01L21/77 ,  H01L27/146 ,  H04N5/369

Abstract: A method for manufacturing a solid-state imaging device comprises a first step of preparing an imaging element having a second principal surface having an electrode arranged thereon, and a photoelectric converter part configured to photoelectrically convert the incident energy line so as to generate a signal charge; a second step of preparing a support substrate, provided with a through hole extending in a thickness direction thereof, having a third principal surface; a third step of aligning the imaging element and the support substrate with each other so that the electrode is exposed out of the through hole while the second and third principal surfaces oppose each other and joining the imaging element and the support substrate to each other; and a fourth step of arranging a conductive ball-shaped member in the through hole and electrically connecting the ball-shaped member to the electrode after the third step.