公开(公告)号：US20180286898A1

公开(公告)日：2018-10-04

申请号：US15942684

申请日：2018-04-02

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Masaharu MURAMATSU ,  Yasuhito MIYAZAKI ,  Hirotaka TAKAHASHI

IPC: H01L27/146

Abstract: An optical semiconductor device includes a semiconductor substrate having a plurality of photoelectric conversion parts and having a trench formed to separate the plurality of photoelectric conversion parts from each other, an insulating layer formed on at least an inner surface of the trench, a boron layer formed on the insulating layer, and a metal layer formed on the boron layer.

公开(公告)号：US20190080911A1

公开(公告)日：2019-03-14

申请号：US15765536

申请日：2016-09-01

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Masaharu MURAMATSU ,  Hisanori SUZUKI ,  Yasuhito YONETA ,  Shinya OTSUKA ,  Hirotaka TAKAHASHI

IPC: H01L21/285 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/14 ,  H01L23/522

Abstract: Provided is a wiring structural body provided with a wiring pattern including a through-wiring pattern, the wiring structural body including: a silicon substrate having a through hole in which the through-wiring pattern is disposed; an insulating layer provided on a surface of the silicon substrate including an inner surface of the through hole along at least the wiring pattern; a boron layer provided on the insulating layer along the wiring pattern; and a metal layer provided on the boron layer.

公开(公告)号：US20180286901A1

公开(公告)日：2018-10-04

申请号：US15764492

申请日：2016-07-11

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Masaharu MURAMATSU ,  Hisanori SUZUKI ,  Yasuhito YONETA ,  Shinya OTSUKA ,  Hirotaka TAKAHASHI

IPC: H01L27/146 ,  H04N5/369 ,  H01L31/02

CPC classification number: H01L27/1464 ,  H01L27/146 ,  H01L27/1462 ,  H01L31/02 ,  H04N5/369

Abstract: A back-illuminated solid-state imaging element includes a semiconductor substrate which has a front surface and a back surface provided with a recess, and in which a thinned section, which is a bottom section of the recess, is an imaging area, a signal read-out circuit formed on the front surface of the semiconductor substrate, a boron layer formed on at least the back surface of the semiconductor substrate and a lateral surface of the recess, a metal layer formed on the boron layer, and provided with an opening opposing a bottom surface of the recess, and an anti-reflection layer formed on the bottom surface of the recess.

公开(公告)号：US20180286899A1

公开(公告)日：2018-10-04

申请号：US15942759

申请日：2018-04-02

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Masaharu MURAMATSU ,  Yasuhito MIYAZAKI ,  Hirotaka TAKAHASHI

IPC: H01L27/146

Abstract: A method of manufacturing an optical semiconductor device includes preparing a semiconductor substrate having a plurality of photoelectric conversion parts, forming a trench in the semiconductor substrate to separate the plurality of photoelectric conversion parts from each other, forming a boron layer on an inner surface of the trench by a vapor phase growth method, and forming an accumulation layer in the semiconductor substrate along the inner surface of the trench by performing a thermal diffusion treatment on the boron layer.

公开(公告)号：US20190080912A1

公开(公告)日：2019-03-14

申请号：US15765528

申请日：2016-09-01

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Masaharu MURAMATSU ,  Hisanori SUZUKI ,  Yasuhito YONETA ,  Shinya OTSUKA ,  Hirotaka TAKAHASHI

IPC: H01L21/288 ,  C23C18/18 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/522

Abstract: Provided is a method for producing a wiring structural body provided with a wiring pattern, the method including a first step of forming an insulating layer on a surface of a silicon substrate along at least a region for forming the wiring pattern, a second step of forming a boron layer on the insulating layer along the region, and a third step of forming a metal layer on the boron layer by plating.