公开(公告)号：US20190035843A1

公开(公告)日：2019-01-31

申请号：US16081208

申请日：2017-03-01

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Tatsuki KASUYA ,  Takeshi KAWAHARA ,  Yasuhito MIYAZAKI ,  Kentaro MAETA ,  Hisanori SUZUKI

IPC: H01L27/148 ,  H01L31/0236 ,  H01L31/0224

Abstract: A semiconductor photodetector includes a semiconductor substrate including a silicon substrate. The semiconductor substrate includes a second main surface as a light incident surface and a first main surface opposing the second main surface. In the semiconductor substrate, carriers are generated in response to incident light. A plurality of protrusions is formed on the second main surface. The protrusion includes a slope inclined with respect to a thickness direction of the semiconductor substrate. At the protrusion, a (111) surface of the semiconductor substrate is exposed as the slope. The height of the protrusion is equal to or more than 200 nm.

公开(公告)号：US20180286898A1

公开(公告)日：2018-10-04

申请号：US15942684

申请日：2018-04-02

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Masaharu MURAMATSU ,  Yasuhito MIYAZAKI ,  Hirotaka TAKAHASHI

IPC: H01L27/146

Abstract: An optical semiconductor device includes a semiconductor substrate having a plurality of photoelectric conversion parts and having a trench formed to separate the plurality of photoelectric conversion parts from each other, an insulating layer formed on at least an inner surface of the trench, a boron layer formed on the insulating layer, and a metal layer formed on the boron layer.

公开(公告)号：US20180286899A1

公开(公告)日：2018-10-04

申请号：US15942759

申请日：2018-04-02

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Masaharu MURAMATSU ,  Yasuhito MIYAZAKI ,  Hirotaka TAKAHASHI

IPC: H01L27/146

Abstract: A method of manufacturing an optical semiconductor device includes preparing a semiconductor substrate having a plurality of photoelectric conversion parts, forming a trench in the semiconductor substrate to separate the plurality of photoelectric conversion parts from each other, forming a boron layer on an inner surface of the trench by a vapor phase growth method, and forming an accumulation layer in the semiconductor substrate along the inner surface of the trench by performing a thermal diffusion treatment on the boron layer.

公开(公告)号：US20150380580A1

公开(公告)日：2015-12-31

申请号：US14766778

申请日：2014-01-24

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yasuhito MIYAZAKI ,  Kentaro MAETA ,  Masaharu MURAMATSU

IPC: H01L31/0352 ,  H01L31/10

Abstract: A back-illuminated energy ray detecting element 1 includes a semiconductor substrate and a protective film. The semiconductor substrate has a first principal surface as an energy ray incident surface and a second principal surface opposite to the first principal surface, and a charge generating region configured to generate an electric charge according to incidence of an energy ray is disposed on the second principal surface side. The protective film is disposed on the second principal surface side of the semiconductor substrate to cover at least the charge generating region, and includes silicon nitride or silicon nitride oxide. The protective film has a stress alleviating section configured to alleviate stress generated in the protective film.

Abstract translation: 背照式能量射线检测元件1包括半导体衬底和保护膜。 半导体衬底具有作为能量射线入射表面的第一主表面和与第一主表面相对的第二主表面，并且被配置为根据能量射线的入射产生电荷的电荷产生区域被布置在第二校准体上 表面 保护膜设置在半导体基板的第二主面侧，至少覆盖电荷产生区域，并且包括氮化硅或氮氧化硅。 保护膜具有减轻由保护膜产生的应力的应力消除部。