公开(公告)号：US20230045038A1

公开(公告)日：2023-02-09

申请号：US17792799

申请日：2021-01-19

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Koei YAMAMOTO ,  Tatsuki KASUYA ,  Kazuhiro TANIZAKI ,  Yoshiyuki SUZUKI

IPC: H01L27/146

Abstract: A method for manufacturing a back-illuminated solid-state imaging device includes a first step of preparing a first conduction-type semiconductor layer having a front surface and a back surface, a second step of forming a first asperity region on the front surface of the semiconductor layer by selectively etching the front surface of the semiconductor layer, a third step of forming a second asperity region on the front surface of the semiconductor layer by smoothening asperities of the first asperity region, and a fourth step of forming an insulating layer along the second asperity region and forming a plurality of charge transfer electrodes on the insulating layer.

公开(公告)号：US20190035843A1

公开(公告)日：2019-01-31

申请号：US16081208

申请日：2017-03-01

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Tatsuki KASUYA ,  Takeshi KAWAHARA ,  Yasuhito MIYAZAKI ,  Kentaro MAETA ,  Hisanori SUZUKI

IPC: H01L27/148 ,  H01L31/0236 ,  H01L31/0224

Abstract: A semiconductor photodetector includes a semiconductor substrate including a silicon substrate. The semiconductor substrate includes a second main surface as a light incident surface and a first main surface opposing the second main surface. In the semiconductor substrate, carriers are generated in response to incident light. A plurality of protrusions is formed on the second main surface. The protrusion includes a slope inclined with respect to a thickness direction of the semiconductor substrate. At the protrusion, a (111) surface of the semiconductor substrate is exposed as the slope. The height of the protrusion is equal to or more than 200 nm.