公开(公告)号：US20230045038A1

公开(公告)日：2023-02-09

申请号：US17792799

申请日：2021-01-19

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Koei YAMAMOTO ,  Tatsuki KASUYA ,  Kazuhiro TANIZAKI ,  Yoshiyuki SUZUKI

IPC: H01L27/146

Abstract: A method for manufacturing a back-illuminated solid-state imaging device includes a first step of preparing a first conduction-type semiconductor layer having a front surface and a back surface, a second step of forming a first asperity region on the front surface of the semiconductor layer by selectively etching the front surface of the semiconductor layer, a third step of forming a second asperity region on the front surface of the semiconductor layer by smoothening asperities of the first asperity region, and a fourth step of forming an insulating layer along the second asperity region and forming a plurality of charge transfer electrodes on the insulating layer.