公开(公告)号：US20190080911A1

公开(公告)日：2019-03-14

申请号：US15765536

申请日：2016-09-01

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Masaharu MURAMATSU ,  Hisanori SUZUKI ,  Yasuhito YONETA ,  Shinya OTSUKA ,  Hirotaka TAKAHASHI

IPC: H01L21/285 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/14 ,  H01L23/522

Abstract: Provided is a wiring structural body provided with a wiring pattern including a through-wiring pattern, the wiring structural body including: a silicon substrate having a through hole in which the through-wiring pattern is disposed; an insulating layer provided on a surface of the silicon substrate including an inner surface of the through hole along at least the wiring pattern; a boron layer provided on the insulating layer along the wiring pattern; and a metal layer provided on the boron layer.

公开(公告)号：US20180286901A1

公开(公告)日：2018-10-04

申请号：US15764492

申请日：2016-07-11

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Masaharu MURAMATSU ,  Hisanori SUZUKI ,  Yasuhito YONETA ,  Shinya OTSUKA ,  Hirotaka TAKAHASHI

IPC: H01L27/146 ,  H04N5/369 ,  H01L31/02

CPC classification number: H01L27/1464 ,  H01L27/146 ,  H01L27/1462 ,  H01L31/02 ,  H04N5/369

Abstract: A back-illuminated solid-state imaging element includes a semiconductor substrate which has a front surface and a back surface provided with a recess, and in which a thinned section, which is a bottom section of the recess, is an imaging area, a signal read-out circuit formed on the front surface of the semiconductor substrate, a boron layer formed on at least the back surface of the semiconductor substrate and a lateral surface of the recess, a metal layer formed on the boron layer, and provided with an opening opposing a bottom surface of the recess, and an anti-reflection layer formed on the bottom surface of the recess.

公开(公告)号：US20190080912A1

公开(公告)日：2019-03-14

申请号：US15765528

申请日：2016-09-01

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Masaharu MURAMATSU ,  Hisanori SUZUKI ,  Yasuhito YONETA ,  Shinya OTSUKA ,  Hirotaka TAKAHASHI

IPC: H01L21/288 ,  C23C18/18 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/522

Abstract: Provided is a method for producing a wiring structural body provided with a wiring pattern, the method including a first step of forming an insulating layer on a surface of a silicon substrate along at least a region for forming the wiring pattern, a second step of forming a boron layer on the insulating layer along the region, and a third step of forming a metal layer on the boron layer by plating.

公开(公告)号：US20190027521A1

公开(公告)日：2019-01-24

申请号：US16069342

申请日：2016-12-28

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Shinya OTSUKA ,  Hisanori SUZUKI ,  Masaharu MURAMATSU

IPC: H01L27/146 ,  H04N5/372 ,  H01L27/148

CPC classification number: H01L27/1464 ,  H01L27/14 ,  H01L27/144 ,  H01L27/14623 ,  H01L27/14812 ,  H04N5/372

Abstract: In a back-illuminated solid-state image pickup device, first charge transfer electrode groups (vertical shift register) are present in an imaging region, and second charge transfer electrode groups (horizontal shift register) are present in a peripheral region of the imaging region. The light incident surface of the semiconductor substrate 4 corresponding to the peripheral region is etched, and an inorganic light shielding substance SH is filled in the etched region. The amount of the inorganic light shielding substance that evaporates and vaporizes under the vacuum environment is extremely small, and the influence on the imaging by the vaporized gas is small.

公开(公告)号：US20160044260A1

公开(公告)日：2016-02-11

申请号：US14774141

申请日：2014-02-18

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Shinya OTSUKA ,  Hisanori SUZUKI ,  Masaharu MURAMATSU

IPC: H04N5/372 ,  H04N5/378

CPC classification number: H04N5/372 ,  H01L27/14812 ,  H04N5/37213 ,  H04N5/3725 ,  H04N5/378

Abstract: A solid-state imaging device includes photoelectric converting sections transfer sections first buffer sections second buffer sections first output sections, and second output sections. The photoelectric converting sections generate electric charges in response to incidence of light. The transfer sections transfer the generated electric charges in a first direction or in a second direction opposite thereto in response to three-phase or four-phase drive signals. The first buffer sections and the second buffer sections acquire the electric charges transferred in the first and second directions, respectively, by the transfer sections and transfer the acquired electric charges in the first and second directions, respectively, in response to two-phase drive signals. The first output sections and the second output sections acquire the electric charges transferred from the first buffer sections and from the second buffer sections respectively, and output signals according to the acquired electric charges.

Abstract translation: 固态成像装置包括光电转换部分传送部分第一缓冲部分第二缓冲部分第一输出部分和第二输出部分。 光电转换部分响应于光的入射而产生电荷。 转移部分响应于三相或四相驱动信号在第一方向或与其相反的第二方向上传送产生的电荷。 第一缓冲部分和第二缓冲部分分别通过转移部分获取在第一和第二方向上转移的电荷，并分别响应于两相驱动信号在第一和第二方向上转移所获取的电荷 。 第一输出部分和第二输出部分分别从第一缓冲部分和第二缓冲部分获取电荷，并根据获得的电荷输出信号。