公开(公告)号：US20230387149A1

公开(公告)日：2023-11-30

申请号：US18027730

申请日：2021-10-08

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Mitsuhito MASE ,  Ryo TAKIGUCHI ,  Hiroaki ISHII ,  Masaru NAKANO ,  Shin-ichiro TAKAGI

IPC: H01L27/146 ,  H01L31/107 ,  H01L31/0224

CPC classification number: H01L27/14609 ,  H01L27/14643 ,  H01L31/107 ,  H01L31/022408

Abstract: Provided is an optical sensor including: a charge generation region that generates charges in response to incident light; a charge collection region to which charges generated in the charge generation region are transferred; and at least one transfer gate electrode disposed on a transfer region between the charge generation region and the charge collection region. The charge generation region includes an avalanche multiplication region that causes avalanche multiplication, and a gradient potential energy formation region that forms gradient potential energy that is gradient so that potential energy becomes lower as approaching the transfer region in the charge generation region.

公开(公告)号：US20230026004A1

公开(公告)日：2023-01-26

申请号：US17788005

申请日：2020-12-07

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Mitsuhito MASE ,  Jun HIRAMITSU ,  Akihiro SHIMADA ,  Hiroaki ISHII ,  Toshinori ITO ,  Yuma TANAKA

IPC: G01S17/89 ,  H01L27/146

Abstract: A ranging image sensor includes a semiconductor layer and an electrode layer. The semiconductor layer and the electrode layer form a plurality of pixels. Each of the plurality of pixels includes an avalanche multiplication region, a charge distribution region, a first charge transfer region, and a second charge transfer region in the semiconductor layer. Each of the plurality of pixels includes a photogate electrode, a first transfer gate electrode, and a second transfer gate electrode in the electrode layer. The avalanche multiplication region is continuous over the plurality of pixels or reaches a trench formed in the semiconductor layer so as to separate the plurality of pixels from each other.

公开(公告)号：US20230223418A1

公开(公告)日：2023-07-13

申请号：US17922803

申请日：2021-01-12

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Jun HIRAMITSU ,  Mitsuhito MASE ,  Akihiro SHIMADA ,  Hiroaki ISHII ,  Toshinori ITO ,  Yuma TANAKA

IPC: H01L27/146 ,  H01L31/107

CPC classification number: H01L27/1463 ,  H01L31/107

Abstract: An optical sensor includes an avalanche multiplication region including a first multiplication region having a first conductive type and a second multiplication region having a second conductive type, each of the first multiplication region and the second multiplication region being formed in a layer shape, a charge collection region having the second conductive type disposed on a first side of the second multiplication region, and a first conductive region having the first conductive type disposed on the first side of the second multiplication region. The second multiplication region has a first portion overlapping the charge collection region in a thickness direction of the first multiplication region and the second multiplication region and a second portion overlapping the first conductive region in the thickness direction. A concentration of impurities in the first portion is higher than a concentration of impurities in the second portion.

公开(公告)号：US20230171522A1

公开(公告)日：2023-06-01

申请号：US17922806

申请日：2021-03-17

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Mitsuhito MASE ,  Masaru NAKANO ,  Jun HIRAMITSU ,  Akihiro SHIMADA ,  Hiroaki ISHII ,  Toshinori ITO ,  Yuma TANAKA

IPC: H04N25/771 ,  H01L27/146

CPC classification number: H04N25/771 ,  H01L27/14643

Abstract: A light detection device includes a controller that controls electric potentials of a charge collection electrode and a transfer gate electrode so that potential energy in a region immediately below the charge collection electrode is a first level, and potential energy in a region immediately below the transfer gate electrode is higher than the potential energy in the region immediately below the charge collection electrode in a first period, and so that the potential energy in the region immediately below the charge collection electrode is a second level higher than the first level, and the potential energy in the region immediately below the transfer gate electrode is lower than the potential energy in the region immediately below the charge collection electrode in a second period after the first period.

公开(公告)号：US20230022384A1

公开(公告)日：2023-01-26

申请号：US17787981

申请日：2020-11-11

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Mitsuhito MASE ,  Jun HIRAMITSU ,  Hiroaki ISHII ,  Yuma TANAKA ,  Toshinori ITO

IPC: H01L27/146

Abstract: A multiplying image sensor includes a semiconductor layer having a first surface and a second surface and a wiring layer provided on the second surface. The semiconductor layer includes a plurality of pixels arranged along the first surface. Each of the plurality of pixels includes a first semiconductor region, a second semiconductor region formed on the second surface side with respect to at least a part of the first semiconductor region and divided for each of the plurality of pixels, and a well region formed in the second semiconductor region so as to be separated from the first semiconductor region and forming a part of a pixel circuit. At least a part of the first semiconductor region and at least a part of the second semiconductor region form an avalanche multiplication region.

公开(公告)号：US20230048727A1

公开(公告)日：2023-02-16

申请号：US17788000

申请日：2020-12-07

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Mitsuhito MASE ,  Jun HIRAMITSU ,  Akihiro SHIMADA ,  Hiroaki ISHII ,  Toshinori ITO ,  Yuma TANAKA

IPC: G01S17/89 ,  G01S7/481

Abstract: In a ranging image sensor, each pixel includes an avalanche multiplication region, a charge distribution region, a pair of first charge transfer regions, a pair of second charge transfer regions, a well region, a photogate electrode, a pair of first transfer gate electrodes, and a pair of second transfer gate electrodes. The first multiplication region of the avalanche multiplication region is formed so as to overlap the charge distribution region and so as not to overlap the well region in the Z direction. The second multiplication region of the avalanche multiplication region is formed so as to overlap the charge distribution region and the well region in the Z direction.