公开(公告)号：US10916478B2

公开(公告)日：2021-02-09

申请号：US15899508

申请日：2018-02-20

申请人： GLOBALFOUNDRIES U.S. Inc.

发明人： Lei L. Zhuang ,  Balasubramanian Pranatharthiharan ,  Lars Liebmann ,  Ruilong Xie ,  Terence Hook

IPC分类号： H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/08 ,  H01L29/66 ,  H01L21/8234 ,  H01L29/78 ,  H01L27/11

摘要： In a self-aligned fin cut process for fabricating integrated circuits, a sacrificial gate or an epitaxially-formed source/drain region is used as an etch mask in conjunction with a fin cut etch step to remove unwanted portions of the fins. The process eliminates use of a lithographically-defined etch mask to cut the fins, which enables precise and accurate alignment of the fin cut.

公开(公告)号：US20230395502A1

公开(公告)日：2023-12-07

申请号：US18362044

申请日：2023-07-31

申请人： GlobalFoundries U.S. Inc.

发明人： Ruilong Xie ,  Lars Liebmann ,  Daniel Chanemougame ,  Geng Han

IPC分类号： H01L23/528 ,  H01L23/522 ,  H01L21/768 ,  H01L23/532

CPC分类号： H01L23/5283 ,  H01L23/5226 ,  H01L21/76802 ,  H01L21/76816 ,  H01L23/53295 ,  H01L21/76879 ,  H01L21/02164

摘要： An integrated circuit product includes a first layer of insulating material above a device layer of a semiconductor substrate and with a lowermost surface above an uppermost surface of a gate of a transistor in a device layer of the semiconductor substrate. A metallization blocking structure is in an opening in the first layer of insulating material and has a lowermost surface above the uppermost surface of the gate and includes a second insulating material that is different from the first insulating material. A metallization trench is in the first layer of insulating material on opposite sides of the metallization blocking structure. A contact structure is in the second insulating material and entirely below the metallization trench. A conductive metallization line includes first and second portions positioned in the metallization trench on opposite sides of the metallization blocking structure and a long axis extending along the first and second portions.

公开(公告)号：US20220108950A1

公开(公告)日：2022-04-07

申请号：US17553924

申请日：2021-12-17

申请人： GlobalFoundries U.S. Inc.

发明人： Ruilong Xie ,  Lars Liebmann ,  Daniel Chanemougame ,  Geng Han

IPC分类号： H01L23/528 ,  H01L23/522 ,  H01L21/768

摘要： An integrated circuit product includes a first layer of insulating material including a first insulating material. The first layer of insulating material is positioned above a device layer of a semiconductor substrate. The first layer of insulating material has a lowermost surface positioned above an uppermost surface of a gate of a transistor in a device layer of a semiconductor substrate. The device layer includes transistors. A metallization blocking structure is positioned in an opening in the first layer of insulating material. The metallization blocking structure has a lowermost surface above the uppermost surface of the gate and includes a second insulating material that is different from the first insulating material. The metallization blocking structure includes a second insulating material that is different from the first insulating material. A metallization trench is defined in the first layer of insulating material on opposite sides of the metallization blocking structure. A conductive metallization line includes first and second portions positioned in the metallization trench on opposite sides of the metallization blocking structure. The conductive metallization line has a long axis extending along the first and second portions.

公开(公告)号：US20210183709A1

公开(公告)日：2021-06-17

申请号：US17169918

申请日：2021-02-08

申请人： GLOBALFOUNDRIES U.S. Inc.

发明人： Lei L. Zhuang ,  Balasubramanian Pranatharthiharan ,  Lars Liebmann ,  Ruilong Xie ,  Terence Hook

IPC分类号： H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/08 ,  H01L29/66 ,  H01L21/8234

摘要： In a self-aligned fin cut process for fabricating integrated circuits, a sacrificial gate or an epitaxially-formed source/drain region is used as an etch mask in conjunction with a fin cut etch step to remove unwanted portions of the fins. The process eliminates use of a lithographically-defined etch mask to cut the fins, which enables precise and accurate alignment of the fin cut.

公开(公告)号：US12131994B2

公开(公告)日：2024-10-29

申请号：US18362044

申请日：2023-07-31

申请人： GlobalFoundries U.S. Inc.

发明人： Ruilong Xie ,  Lars Liebmann ,  Daniel Chanemougame ,  Geng Han

IPC分类号： H01L23/528 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/02 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/088 ,  H01L27/092 ,  H01L29/40

CPC分类号： H01L23/5283 ,  H01L21/76802 ,  H01L21/76816 ,  H01L23/5226 ,  H01L23/53295 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/76814 ,  H01L21/76832 ,  H01L21/76835 ,  H01L21/76861 ,  H01L21/76877 ,  H01L21/76879 ,  H01L21/823431 ,  H01L21/823821 ,  H01L27/0886 ,  H01L27/0924 ,  H01L29/401

摘要： An integrated circuit product includes a first layer of insulating material above a device layer of a semiconductor substrate and with a lowermost surface above an uppermost surface of a gate of a transistor in a device layer of the semiconductor substrate. A metallization blocking structure is in an opening in the first layer of insulating material and has a lowermost surface above the uppermost surface of the gate and includes a second insulating material that is different from the first insulating material. A metallization trench is in the first layer of insulating material on opposite sides of the metallization blocking structure. A contact structure is in the second insulating material and entirely below the metallization trench. A conductive metallization line includes first and second portions positioned in the metallization trench on opposite sides of the metallization blocking structure and a long axis extending along the first and second portions.

公开(公告)号：US11791263B2

公开(公告)日：2023-10-17

申请号：US17553924

申请日：2021-12-17

申请人： GlobalFoundries U.S. Inc.

发明人： Ruilong Xie ,  Lars Liebmann ,  Daniel Chanemougame ,  Geng Han

IPC分类号： H01L23/528 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/02 ,  H01L29/40 ,  H01L21/8238 ,  H01L27/092 ,  H01L27/088 ,  H01L21/8234

CPC分类号： H01L23/5283 ,  H01L21/76802 ,  H01L21/76816 ,  H01L23/5226 ,  H01L23/53295 ,  H01L21/0217 ,  H01L21/02164 ,  H01L21/76814 ,  H01L21/76832 ,  H01L21/76835 ,  H01L21/76861 ,  H01L21/76877 ,  H01L21/76879 ,  H01L21/823431 ,  H01L21/823821 ,  H01L27/0886 ,  H01L27/0924 ,  H01L29/401

摘要： An integrated circuit product includes a first layer of insulating material including a first insulating material. The first layer of insulating material is positioned above a device layer of a semiconductor substrate. The first layer of insulating material has a lowermost surface positioned above an uppermost surface of a gate of a transistor in a device layer of a semiconductor substrate. The device layer includes transistors. A metallization blocking structure is positioned in an opening in the first layer of insulating material. The metallization blocking structure has a lowermost surface above the uppermost surface of the gate and includes a second insulating material that is different from the first insulating material. The metallization blocking structure includes a second insulating material that is different from the first insulating material. A metallization trench is defined in the first layer of insulating material on opposite sides of the metallization blocking structure. A conductive metallization line includes first and second portions positioned in the metallization trench on opposite sides of the metallization blocking structure. The conductive metallization line has a long axis extending along the first and second portions.

公开(公告)号：US11469146B2

公开(公告)日：2022-10-11

申请号：US17169918

申请日：2021-02-08

申请人： GLOBALFOUNDRIES U.S. Inc.

发明人： Lei L. Zhuang ,  Balasubramanian Pranatharthiharan ,  Lars Liebmann ,  Ruilong Xie ,  Terence Hook

IPC分类号： H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/08 ,  H01L29/66 ,  H01L21/8234 ,  H01L29/78 ,  H01L27/11

摘要： In a self-aligned fin cut process for fabricating integrated circuits, a sacrificial gate or an epitaxially-formed source/drain region is used as an etch mask in conjunction with a fin cut etch step to remove unwanted portions of the fins. The process eliminates use of a lithographically-defined etch mask to cut the fins, which enables precise and accurate alignment of the fin cut.

公开(公告)号：US11233006B2

公开(公告)日：2022-01-25

申请号：US16103372

申请日：2018-08-14

申请人： GLOBALFOUNDRIES U.S. Inc.

发明人： Ruilong Xie ,  Lars Liebmann ,  Daniel Chanemougame ,  Geng Han

IPC分类号： H01L21/768 ,  H01L23/528 ,  H01L23/522 ,  H01L21/02 ,  H01L29/40 ,  H01L21/8238 ,  H01L27/092 ,  H01L27/088 ,  H01L21/8234

摘要： An integrated circuit product includes a first layer of insulating material including a first insulating material. The first layer of insulating material is positioned above a device layer of a semiconductor substrate. The device layer includes transistors. A metallization blocking structure is positioned in an opening in the first layer of insulating material. The metallization blocking structure includes a second insulating material that is different from the first insulating material. A metallization trench is defined in the first layer of insulating material on opposite sides of the metallization blocking structure. A conductive metallization line includes first and second portions positioned in the metallization trench on opposite sides of the metallization blocking structure. The conductive metallization line has a long axis extending along the first and second portions.